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2N5738 Datasheets (16)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N5738	Semelab	Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=10 / Hfe=20-80 / fT(Hz)=10M / Pwr(W)=50	Original	PDF	10.98KB	1
2N5738	API Electronics	Short form transistor data	Short Form	PDF	212.98KB	2
2N5738	API Electronics	Short form transistor data	Short Form	PDF	62.77KB	1
2N5738	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	43.75KB	1
2N5738	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	92.66KB	1
2N5738	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	114.04KB	1
2N5738	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	88.71KB	1
2N5738	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.85KB	1
2N5738	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	80.18KB	1
2N5738	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	163.29KB	1
2N5738	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	109.31KB	1
2N5738	Unknown	Transistor Replacements	Scan	PDF	84.9KB	1
2N5738	PPC Products	Transistor Short Form Data	Scan	PDF	486.94KB	1
2N5738	Silicon Transistor	Industrial Grade Power Transistors	Scan	PDF	70.26KB	1

2N5738	Solidev Semiconductors	Solid State Products (Transistor Guide)	Scan	PDF	106.3KB	2
2N5738	Solitron Devices	Planar Power Transistor	Scan	PDF	678.74KB	11

2N5738 Price and Stock

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Microchip Technology Inc


Microchip Technology Inc 2N5738 Transistor BJT PNP 100V 10A TO-3 - Bulk (Alt: 2N5738)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N5738	Bulk		50 Weeks	100	1 - 10 - 100 $71.65 1000 $66.14 10000 $65.30	Buy Now
Mouser Electronics	2N5738					1 - 10 - 100 $79.44 1000 $79.44 10000 $79.44	Get Quote
Newark	2N5738	Bulk			500	1 - 10 - 100 - 1000 $72.23 10000 $72.23	Buy Now
Microchip Technology Inc	2N5738			50 Weeks		1 $72.23 10 $72.23 100 $72.23 1000 $72.23 10000 $72.23	Buy Now
Onlinecomponents.com	2N5738					1 - 10 - 100 $66.06 1000 $66.06 10000 $66.06	Buy Now

Master Electronics	2N5738					1 - 10 - 100 $66.06 1000 $66.06 10000 $66.06	Buy Now

2N5738 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840	OCR Scan	2n5733 2n5734 2n5737 2n5738 +62n5739 2n5740 2n5741 2n5742 2n5743 2n5744	PDF
2N5738 Abstract: 2N5737 Contextual Info: SavantIC Semiconductor Product Specification 2N5737 2N5738 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION	Original	2n5737 2n5738	PDF
2N5738 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5738 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation	Original	2n5738 -100v	PDF
TO61 Abstract: 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386 Contextual Info: Device Type VCEO hFE V Min/Max @ I C (A) 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386 2N5621 2N5623 2N5625 2N5627 2N5677 2N5737 2N5738 2N5739 2N5740 2N5853 2N6127 2N6248 SDT3105 SDT3106 SDT3107 SDT3108 SDT3109 SDT3115 SDT3116 SDT3117 SDT3118	Original	2n5007 2n5009 2n5290 2n5291 +72n5312 2n5314 2n5316 2n5318 2n5386 2n5621 to61	PDF
2N5738 Contextual Info: 2N5738 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5738 o204aa 31-jul-02	PDF
Contextual Info: 2N5738 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5738 o204aa 18-jun-02	PDF
2N5940 Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738 Contextual Info: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE \| f l a S 4 D E S DDDOTTt. 3 ,D . . T - \|~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP	OCR Scan	2n5733 2n5734 2n5737 2n5738 +132n5739 2n5740 2n5741 2n5742 2n5743 2n5744 2n5940 2n5928 2n597 2n5867 2nxxxx 2n5870 2n6030	PDF
Contextual Info: 2N5738 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5738 o204aa 16-jul-02	PDF
2u 62 diode Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19 Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15	Original	bd610 bds11 bds14 2sd213 +152n5006 2n5007 2n5623 2n5624 2sa746 2sa877 2u 62 diode 2sc1115 bd313 kt808bm sdt7603 2u 87 diode 2u 45 diode diode 2u 66 bdy19	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2n3016 2n3021 2n3022 2n3023 +162n3024 2n3025 2n3026 2n3055 2n3076 2n3171 buv48i bu808dxi bd699 buv18a bd241cfi transistor 2sa1046 buw52i bu808dfi equivalent bu724as 2sa1046	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2n5655 2n5656 2n5657 tip73b +14tip74 tip74a tip74b tip75 tip75a tip75b 2n5657 equivalent 2sa1046 bu326 bu108 bu100 2sc2331 y tip47 419 2n3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	bd157 bd158 bd159 tip73b +16tip74 tip74a tip74b tip75 tip75a tip75b mje494 2sc1419 bd 804 2sd675 mje104 bd581 bd135 curves mj1000 dts-4041 2n5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2n6609 2n3773 2n6667 2n6668 +13220ab 2n6387 2n6388 2sd669 equivalent bd801 bdy29 equivalent bu108 2sc2080 2sd436 2n6021 bd345 tip122 d-pak package 2sd544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	mjf6107 2n6107 e69369 tip73b +16tip74 tip74a tip74b tip75 tip75a tip75b 2sc495 nsp41a bu108 transistor bd614 motorola 2sa663 bd4122 bd661 mj1000 nsp2100 d45vh4 similar	PDF

D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	mje16204 tip73b tip74 tip74a +15tip74b tip75 tip75a tip75b tip75c d42c5 transistor bc 647 2n5302 eb pin out transistor tip2955 bs170 replacement 2sc141 bu108 bc 658 motorola transistors mje3055 to 127 mc7812 to-220	PDF
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	mje521 mje371 tip73b tip74 +16tip74a tip74b tip75 tip75a tip75b tip75c mje521 equivalent bu108 2n3055 plastic 2n6488 motorola motorola transistors mje3055 to 127 3904 transistor bdx54 tip122 tip127 audio amp bu326 bu100	PDF
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	mje2955t mje3055t tip73b tip74 +16tip74a tip74b tip75 tip75a tip75b tip75c 2n3055 bu108 an415a mje2955t st bdx54 2n3055 audio amplifier application note bu326 bu100 mje13005 bdv64	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2n5630 2n6030 2n5631 2n6031 +102n5631 equivalent 2n5630 "cross-reference chomerics bu108 2sa1046 tip122 tip127 audio amp bu326 bu100 2sd313 equivalent npn/tip42c as regulator	PDF
BD179-10 equivalent Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	bd179 bd180 bd179-10 tip73b +14tip74 tip74a tip74b tip75 tip75a bd179-10 equivalent bu108 2sa1046 2sc7 bdx54 bux98a bu326 bu100 bul1	PDF
sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	mjl3281a mjl1302a tip73b tip74 +14tip74a tip74b tip75 tip75a sec tip41c mje493 2sc1419 2sc3281 2n3055 audio output circuit bdw93 mj1000 bdw83 buv98a cross reference 2sc1943	PDF
TRANSISTOR BC 384 Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required	Original	tip47 e69369 mjf47 tip73b +14tip74 tip74a tip74b tip75 tip75a tip75b transistor bc 384 bu108 bd139 equivalent transistor 2n3055 equivalent rca1c03 transistor bc 574 bu326 bu100	PDF
Transistor 2sC1060 Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:	Original	bdw46 bdw42/bdw47 220ab bdw42 +15bdw47 tip73b tip74 tip74a tip74b transistor 2sc1060 2sd460 2sc143 all similar transistor 2sa715 bu108 mj410 2sd404 bd241c but56 bdw59	PDF
MJ11017 equivalent Abstract: BU108 MJ11021 BU326 BU100 MJE3055T Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types	Original	mj11018 mj11022 mj11017 mj11021 +9tip73b tip74 tip74a tip74b mj11017 equivalent bu108 bu326 bu100 mje3055t	PDF
BU108 Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A	Original	buv21 tip73b tip74 tip74a +16tip74b tip75 tip75a tip75b tip75c 2n6488 bu108 transistor bc 574 2n6107 motorola 2sc1943 mj3055 to220 2sc1419 bu326 bu100 mj*15033 2n6277	PDF

2N5738 Search Results

2N5738 Datasheets (16)

2N5738 Price and Stock

Microchip Technology Inc 2N5738

2N5738 Datasheets Context Search

2N5738

2N5738

TO61

2N5738

2N5940

2u 62 diode

BUV48I

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

D42C5

mje521 equivalent

2N3055

2N5631 equivalent

BD179-10 equivalent

sec tip41c

TRANSISTOR BC 384

Transistor 2sC1060

MJ11017 equivalent

BU108