2SD213 Search Results

Contextual Info: 2SD2130 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 8.3MAX. 5.8 POWER AMPLIFIER APPLICATIONS. 0 3.1 ± 0 .1 . High DC Current Gain : hpE=2000(Min.)(VCE=2V, Ic=lA) 3:. Low Saturation Voltage

Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A

3a npn to126 transistor

Abstract: 2SD2136
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SD2136 is designed for power amplification. „ FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .

2SD2135

Abstract: 955A ASO01
Contextual Info: Power Transistors 2S D 2135 2SD2135 Silicon NPN Epitaxial Planar Darlington Type P ackage Dim ensions AF Amplifier Unit ! mm • Features • High DC current gain h FE> • 60V Zener diode built-in betw een C and B • Automatic mounting by radial taping is possible.

D2131

Abstract: D-2131 2SD2131
Contextual Info: 2SD2131 東芝トランジスタ シリコンNPN三重拡散形 2SD2131 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 3 V, IC = 3 A)

D2131

Abstract: transistor d2131 2SD2131
Contextual Info: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

2SB1416

Abstract: 2SD2136
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SD2137A

Abstract: 2SB1417 2SB1417A 2SD2137
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2137 base voltage 2SD2137A

2sd2137

Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm Parameter Symbol Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 VCBO 2SD2137A Unit 60 V 2.5±0.1 0.65±0.1 0.35±0.1 1.05±0.1 VEBO V Peak collector current

2SB1418

Abstract: 2SB1418A 2SD2138 2SD2138A
Contextual Info: Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A Collector to base voltage 2SB1418 Collector to emitter voltage 2SB1418 18.0±0.5 Solder Dip Symbol

Contextual Info: Power Transistors 2SD2139 2SD2139 Silicon NPN Triple-Diffused Planar Type High DC Current Gain • Features • H igh DC c u r re n t gain ■ Package Dimensions Power Amplifier hFE , (I i f e ) • G ood lin earity of DC c u r re n t gain ( h ^ ) • A u to m atic m o u n tin g by radial tap in g is p o ssib le

Contextual Info: Power Transistors 2SB1416 2SB1416 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD2136 •Features • High DC current gain Iife and good linearity • Low collector-emitter saturation voltage (Vc e m )

2SD2137

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR NPN TO – 126 FEATURES z High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. z Low Collector-Emitter Saturation Voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB1418 and 2SB1418A 4.2±0.2 Unit: mm • Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A 5.0±0.1 90˚ • High forward current transfer ratio hFE

2SB1418

Abstract: 2SB1418A 2SD2138 2SD2138A
Contextual Info: Power Transistors 2SD2138, 2SD2138A 2SD2138, 2SD2138A Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1418, 2SB1418A • Features • H ig h D C c u r r e n t g a in Oife a n d g o o d lin e a r ity

j001

Abstract: diode zenner ZL 15 2SD2131
Contextual Info: TO SH IBA 2SD2131 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 2 1 31 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO • High DC Current Gain : hFE = 2000 (Min.) (VCE = 3V, Ic = 3A)

2SB1414

Abstract: 2SD2134
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl

2SD2133

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

2SB1416

Abstract: 2SD2136
Contextual Info: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 60 V Collector-emitter voltage (Base open)

2SB1418

Abstract: 2SB1418A 2SD2138 2SD2138A
Contextual Info: Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A Collector to base voltage 2SB1418 Collector to emitter voltage 2SB1418 18.0±0.5 Solder Dip Symbol

2SD2137

Contextual Info: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SD2137 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range