BDW47 Search Results

TO-220AB transistor package

Abstract: bdw42G
Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

BDW42

Abstract: BDW47 pnp darlington to-220 10a
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW47 TO-220 Plastic Package General Purpose and Low Speed Switching Application Complementary BDW42 ABSOLUTE MAXIMUM RATINGS

BDW47

Contextual Info: ST BDW47 PNP Silicon Planar Darlington Power Transistor General Purpose and Low Speed Switching Application TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V

BDW47

Contextual Info: ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage

Transistor 2sC1060

Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:

npn darlington transistor 150 watts

Abstract: 1N5825 BDW42 BDW46 BDW47 BDW47G
Contextual Info: BDW42* − NPN, BDW46, BDW47* − PNP Preferred Device Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

BDW42

Abstract: BDW47
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW42 TO-220 Plastic Package General Purpose and Low Speed Switching Application Complementary BDW47

Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

BDW47

Contextual Info: ST BDW47 PNP Silicon Planar Darlington Power Transistor General Purpose Application and Low Speed Switching TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V

BDW42

Abstract: BDW46 BDW47
Contextual Info: , One. eur 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 US A TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BDW42* - NPN, BDW46, BDW47* - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP

BDW41

Abstract: 1N5825 BDW40 BDW42 BDW46 BDW47 MSD6100
Contextual Info: MOTOROLA Order this document by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc.

1N5825

Abstract: BDW42 BDW46 BDW47 MSD6100
Contextual Info: ON Semiconductor NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 typ.) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:

BDW42

Abstract: BDW47 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification BDW42 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BDW47 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For general purpose and low speed

BDW42

Abstract: BDW47 pnp darlington to-220 10a
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW47 TO-220 Plastic Package General Purpose and Low Speed Switching Application Complementary BDW42 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

BDW47

Abstract: BDW42
Contextual Info: SavantIC Semiconductor Product Specification BDW47 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BDW42 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For general purpose and low speed

BDW42G

Abstract: BDW46G BDW42 BDW46 BDW47 BDW47G
Contextual Info: BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

Contextual Info: BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

BDW47

Contextual Info: ST BDW47 PNP Silicon Planar Darlington Power Transistor General Purpose Application and Low Speed Switching TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V

BDW47

Abstract: BDW42 BDW42G BDW46 BDW46G BDW47G pnp high emitter base voltage 15 volt
Contextual Info: BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

TRANSISTOR bd 147

Abstract: bdw 36 w41b BDW 38 npn darlington transistor 200 watts
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47* • • High DC Current Gain - hFE = 2500 typ. @ lc = 5.0 Adc.

BDW42G

Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G
Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

BDW47

Contextual Info: ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage

BDW45

Abstract: 1N5825 BDW42 BDW46 BDW47 MSD6100
Contextual Info: ON Semiconductort NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR BDW47 TO-220 Plastic Package General Purpose and Low Speed Switching Application Complementary BDW42 ABSOLUTE MAXIMUM RATINGS