BUS36
Abstract: D45VH4 BUS37 ccont D44VH7 MJ10047 2N6486 bdw41 D44VH1 D45VH1
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package (continued) Resistive Switching ¡cCont VcEO (sus) Amps Max Volts Min 12 15 Device Type PNP NPN ts ti @ le MS MS @ le fT MHz P d (Case) hpE Min/Max Amp Max Max Amp Min @ 25°C Watts 90 BUV26
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o-220abbuv26buv27bus36+11bus37mje13008mje13009d44vh1d45vh12n6486d45vh4ccontd44vh7mj10047bdw41
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tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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dl111/djuly-2001r14525tip122 tip127 audio amp schematic+9mje521 equivalentbjt small signal low power bd139mj15003 300 watts amplifier2n3773 pinouttransistor mj11032 equivalentmj11028 transistor equivalent2n3055 ic2n3773 audio amplifier diagram2n222 transistor use as audio amplifier
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
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Transistor 2sC1060
Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:
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bdw46bdw42/bdw47220abbdw42+15bdw47tip73btip74tip74atip74btransistor 2sc10602sd4602sc143all similar transistor 2sa715bu108mj4102sd404bd241cbut56bdw59
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BDW41
Abstract: 1N5825 BDW40 BDW42 BDW46 BDW47 MSD6100
Contextual Info: MOTOROLA Order this document by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc.
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bdw42/dbdw42bdw46bdw47+6bdw42/bdw47220abbdw411n5825bdw40msd6100
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1N5825
Abstract: BDW42 BDW46 BDW47 MSD6100
Contextual Info: ON Semiconductor NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 typ.) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:
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bdw42bdw46bdw47bdw42/bdw47+5220abr14525bdw42/d1n5825msd6100
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KT819B
Abstract: KT818A BD347 MJE1660 2SB629 BD191 1561-0403 BDT52 KT818B 2sb757
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type "c Max fT t0N Max hFE 'CBO r V BR CEO Max Max (A) Of) ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)eat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15
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mje1290mje1660sdt9801kt818a+10kt819a2sb757-09kt819bbd3472sb629bd1911561-0403bdt52kt818b2sb757
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TRANSISTOR bd 147
Abstract: BDW41 w44b BDW39 BDW40 800V PNP BDW48 LSE 0405 BDW44 BDW45
Contextual Info: MOTOROLA SC X S T R S /R F 7 ^ 3 3 -o *f MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA D ARLINGTON COMPLEMENTARY SILICO N POWER TRANSISTORS High DC Current Gain — hpg » 2500 typ. @ lc “ 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:
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bdw39/bdw44bdw40/bdw45bdw41/bdw46bdw42/bdw47+13bdw43/bdw48t0-220abbdw39bdw40bdw41bdw42transistor bd 147w44b800v pnpbdw48lse 0405bdw44bdw45
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BDX53D
Abstract: D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8
Contextual Info: Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type NPN 2N6044 TIP101 BDX53B TIP131 BD899 BD899A BDX53C TIP132 BD901 2N6045 TIP102 MJE15028 BDX53D MJE15030 BU807 BU806 MJE13006 Uceo PNP 2N6041 TIP106 BDX54B TIP136 B0900 BD900A
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2n60442n6041tip101tip106+161k/20kbdx53bbdx54btip131tip1361k/15kbdx53dd45vh4bd807d44h5bdw41bus36bd900bd805bdx33dd44h8
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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BDW420
Abstract: BDW42-D
Contextual Info: MOTOROLA Order this document by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW 42* Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. • • • • • BDW 47* High DC Current Gain - hpE = 2500 typ. @ Iq = 5.0 Adc.
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HT1 npn
Contextual Info: SENELAB LTD 37E D fll331fl7 000DD44 0 .'-'H JU . Ht.1. j U' \\\/'yv TV peN o. ? O p t io n 1'*7 Polarl,y Packa9 e VC e o ¡ £ n, hF E @ /¿.-V : PD V C E /IC BDS10 BDS11 BDS12 BDS13 BDS14 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN PNP PNP TO220M T0220M
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fll331fl7000dd44bds10bds11+6bds12bds13bds14o220mt0220mht1 npn
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UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
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0hf400hf600hf806fp10+126f10070hf10uaa2001mc8500micromodule m68mm191n938874als6432n6058mc1450262n5160 motorolamc3340 equivalentpn3402
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TRANSISTOR bd 147
Abstract: bdw 36 w41b BDW 38 npn darlington transistor 200 watts
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47* • • High DC Current Gain - hFE = 2500 typ. @ lc = 5.0 Adc.
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bdw46bdw42/bdw47o-220abbdw47+6bdw45transistor bd 147bdw 36w41bbdw 38npn darlington transistor 200 watts
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2n30542n327412n42402n4908+162n3054a2n37662n42732n49092n30552n3767strs6307str54122n3055 to-220s2000a3strs6309s2000a2bdw362sc3883strs6308str6020
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BDW45
Abstract: 1N5825 BDW42 BDW46 BDW47 MSD6100
Contextual Info: ON Semiconductort NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:
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bdw42bdw46bdw47bdw42/bdw47+6220abr14525bdw42/dbdw451n5825msd6100
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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bipolar power transistor
Abstract: BDW42 BDW47 motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW 47* • • High DC Current Gain - hpE = 2500 typ. @ lc = 5.0 Adc. Collector Emitter Sustaining Voltage @ 30 mAdc:
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bdw46bdw42/bdw47o-220abbdw42+9bdw47bipolar power transistormotorola darlington power transistor10 amp npn power transistors with low saturation voltagebdw41bdw451n5825transistor 3213bdw40
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TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
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38v01transistor tip122 chn 949e2955tbd706+7tu f 1300313003 transistor npn power to 126transistor e2955tconstruction linear amplifier 2sc1945la 43018d679transistor bf 175
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tl4311
Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
Contextual Info: SG388CH/D 2000 4 2 SG388CH/D 2000 3 2 SCILLC,2000 © 1999 “” http://onsemi.com.cn SCI LLC ./012 !"#$%&'()*+,%?./ 14*+=* )NO @ A L M N O
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