T0220M Search Results

2042A

Abstract: 2039 transistor SC-46 220kf 2049B
Contextual Info: TRANSISTOR CASE OUTLINES Case Outline 2003A unit: mm Case Outline 2042A T0126M L Case Outline 2039 Case Outline 2049B (unit: mm) T0220M F Case Outline 2048A {unit: mm) 0,44 2.0 0.» ob \ -»C *4.0— B: Base Cr Collector E: Emitter JEDEC : TO-92 EIAJ : SC-43

Contextual Info: Continued irom previous page | O nice Pal^ 8* j Absolute maximum ratings Application* te Electrical characteristics Ta a 25 °C t e max @ Vce VCEO (V) Vbbo m W Pc (W) 2SC4075 Tnoonui Color TV chroma, B/W TV video, T0220ML au(ji0 Qutput df|ver 300 300 7.0

BUZ900D

Abstract: BUZ50ASM BUZ50B-220SM
Contextual Info: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P

HT1 npn

Contextual Info: SENELAB LTD 37E D fll331fl7 000DD44 0 .'-'H JU . Ht.1. j U' \\\/'yv TV peN o. ? O p t io n 1'*7 Polarl,y Packa9 e VC e o ¡ £ n, hF E @ /¿.-V : PD V C E /IC BDS10 BDS11 BDS12 BDS13 BDS14 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN PNP PNP TO220M T0220M

horizontal deflection

Contextual Info: TV/CRT Display Application Transistors II Absolute maximum ratings Package Device Application type VCBO (V) VcEO (V) Vebo (V) ic (A) m Electrical characteristics (Ta = 25 deg. C) Tj Pc VcEfMfj @ ! c - I b (deg. C) VcEjsat) (V) tire @ Vce ic tf max tc (A)

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

40320

Abstract: 2sc497 2SA1849 2SA1752 2SC482 2SC3781 2SA1751 2sc4566
Contextual Info: SA0YO T r a n s i s t o r s for V e r y Hi gh-Def i ni t ion C R T D i s p l a y V i d e o O u t p u t Use Our transistors for CRT display use are fabricated using our original process technology. They are designed to meet the characteristic requirements for CRT use.

transistor 2SC3998

Contextual Info: SILICON TRANSISTORS FOR TV/VTR USE VERY HIGH-DEFINITION DISPLAY HORIZONTAL DEFLECTION OUTPUT, VIDEO OUTPUT APPLICATIONS : New product Classified by package and arranged in order of increasing P q . Minus sign for PNP is omitted due to space limitations.

100L

Abstract: 2SC3749 HM16
Contextual Info: Ordering num b er: EN 1968A I SAtiYO i 2SC3749 N o .1968A NPN Triple Diffused Planar Type Silicon Transistor S w i t c h i n g Re g u l a t o r Ap p l i c a t i o n s Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO

LM79XX

Abstract: LM7900 - 220M Series
Contextual Info: SEMELAB NEW PRODUCT LM 7900-220M SERIES NEGATIVE VOLTAGE REGULATOR TO 220 METAL MECHANICAL DATA D im ension s in m m FEATURES • HERMETIC TO 220 METAL PACKAGE • HIGH RELIABILTY • ISOLATED OPTION • MILITARY OPTION • SCREENING OPTIONS • O U TP U T CURRENT UP TO 1 5A

BUZ50A

Abstract: BUZ50B LE17 Diodi IR 50A-220M
Contextual Info: 3 7E SEMELAB LTD D 0133107 OOODEST T • SMLB ' DEC 3 1 1987 <2A^ SEMELAB BUZ 50A -220M BUZ 50B -220M NEW PRODUCT MOS POWER N -C H A N N E L ENHANCEMENT MODE TO 220 METAL MECHANICAL DATA Dimensionsin mm FEATURES • HERMETIC TO 220 METAL PACKAGE T t <5- • HIGH RELIABILTY

04NG

Abstract: DIODE T25 IRFY230 LE17 mosfet 100a 200v
Contextual Info: bOE J> m A1331Û7 GDDOSS4 T2S ISMLB " T 3 ° l- U SENELAB PLC 5EMELAB IRFY230 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS l.F FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE

Contextual Info: Ordering number : EN4263B Monolithic Digital 1C _ LB1823 SAffYO Power Brushless Motor Predriver IC for OA Applications Overview Package Dimensions The LB 1823 is a predriver IC developed for driving power brushless motors in office automation applications.

Contextual Info: Ordering number : EN3794 2SC4441 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition Monocuro Display Horizontal Deflection Output Applications F eatures •High reliability Adoption of HVP process . • High fast. • High breakdown voltage.

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

Contextual Info: SAtfYO Transistors for TV Display Horizontal Deflection Output Use In recent years the development of new media has greatly changed the contents of information to be communicated and the amount of v isual inform ation has increased remarkably. For these circumstances Sanyo has developed horizontal deflection output-use

SC-62

Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
Contextual Info: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)

2SC4630LS

Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Contextual Info: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )

vertical IC tv crt

Abstract: 2SC4566 2SA1751 2SC3790 2SA1352 2SA1380 2SA1381 2SA1875 2SC3416 2SC3502
Contextual Info: Continued fra.71 D.-ewouS oage Absolute maximum ratings Electrical characteristics Ta = 25 Package V tfiu VcEO (V ' (V) Vcao • (V) ; le (A) Pc (W) T, (C ) ICBO max @ Vcb f0 ,¡«Cl Ic b o max Vcb h fE @ Vce - lc tlFE Ci . *T Vce ■ lc Vce Ic tr Vce 2SC4827

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

transistor D1830

Abstract: 2SD830 d1830 transistor 2SD1830 2SD1830 2SB1228 NPN Transistor 5V DARLINGTON 2sd darlington
Contextual Info: [^Ordering num ber: EN 2214B 2SB1228/2SD1830 PNP/NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications A pplications • Suitable for use in control of motor drivers, printer ham m er drivers, relay drivers, and constantvoltage regulators.

2SB1223

Abstract: 2SB1224 2SB1225 2SB1226 2SB1227 2SD1825 2SD1826 2SD1827 2SD1828 2SD1829
Contextual Info: Continued from previous page A bsolut« m axim um ratings Device Package A pplications m » Vcbo VCEO Vebo V (V) <V> *_ *c m ! Electrical characteristics (Ta = 25 °C) le s o m ax @ V cb Æ Pe (W) tc s o max h re @ V ce • t e _ Vc b (V) h re fc*A)

2SK2747

Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282