2N5312 Search Results

2N3340

Abstract: 2N3581 2N2520 2N5609 2N5003 2N5005 2N5287 2N5312 2N5316 2N5607
Contextual Info: 8134693 SEMICOA MD ] e | 0134t. ^ □□QDIE'J 1 | _,T :<5 7 - 0 \ PNP SILICON POWER TRANSISTORS Cont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Type No. PNP Dissipation @25°C (Case) Watts 2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312

FA 23843

Abstract: 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919
Contextual Info: Micmsemi PNP Transistors Part Number PNP 2N5312 2N586S 2N5677 2N5737 2N5316 2N5318 2NS738 2N5314 2NS872 2N6318 2N5007 2N5009 2N6594 2N5741 2N5742 2N5871 2N6317 2N5853 2N7369 2N5621 2N5623 2N5625 2N5290 2N5291 2N5627 2N6127 2N6246 2N6469 2N6247 2N6248 2N6226

TO61

Abstract: 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386
Contextual Info: Device Type VCEO hFE V Min/Max @ I C (A) 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386 2N5621 2N5623 2N5625 2N5627 2N5677 2N5737 2N5738 2N5739 2N5740 2N5853 2N6127 2N6248 SDT3105 SDT3106 SDT3107 SDT3108 SDT3109 SDT3115 SDT3116 SDT3117 SDT3118

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

T100C

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

2N5314

Abstract: 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
Contextual Info: A P I EL ECT RONI CS 00^3592 A P I I NC 2b ELECTRONICS d F | d D 4 3 S cIS □□□Q E3S INC 26C & l~ °~ T :- '3 3 - 0 { 00235 COLLECTOR CURRENT = 20 AMPS NPN TYPES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772 JAN

2N3789

Abstract: 2N3790 2N3791 2N3792 2N5007 2N5009 2N5290 2N5291 2N5312 SDT7909
Contextual Info: 37 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO I M VO LTA G ES D TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO v hFE M IN . I M A X. V GE V CE s V BE(s) V I V *C A I *B A V A 5.0 5.0 5.0 5.0 .50 .50 1.20 1.20 2.0 2.0 .200 .200 90 90 180 2.0

SDT7201

Abstract: 2N5740 SDT3109 2n5290 2N5737 SDT7612
Contextual Info: 35 SILICON POWER TRANSISTORS CURREIV T G A IN SATURATION J VO LTA G ES ë> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M AX. V CE *C V CE s V BE(s) V I V 'c . A 'b I A U A 5.0 5.0 5.0 5.0 5.0 5.0 .60 .60 .60 1.50 1.50 1.50 5.0 5.0 5.0 .500

Contextual Info: Contran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 63 CONTACT METALLIZATION B a se and emitter: > 50.000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" also available)

2N5287

Abstract: 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5322 2N5323 2N5333
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRE A K D O V SAT V O L T A GES M e X. h FE V( D L TAG E S PNP CASE V CE V EB (V) >C (A) M in . Max. 'c (A) 'b (A) V CE (V) V BE V CB 2N5287 TO-59/I 120 100 5.5 5 2.5 70 20 0 2.5 0.5 1.5 Z. 2N 5290 T O -61/1

Transistors 2n551

Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
Contextual Info: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts

AP1152

Abstract: 2N4211 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597
Contextual Info: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

2N3920

Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
Contextual Info: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

sdt31

Contextual Info: 8368602 SOL ITRON DEVICES INC 95D 02885 d ËT| û3kat,DE GDGEÛÛS 1 T- 3 „J&lttren Ä T O [L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER T~ t~( Devices, Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum

2N5854

Contextual Info: 8440355 SPACE 89C~T 011TJ POWER'~£~LECTRONTCS~ D < 3 2 . M i DE|ALIMOBSS •ODDIID i | SPACE POWER ELECTRONICS Hi-Rel PLANAR P O W E R — 1 0 AMP PtSP f*^ .470 .500 MAX -*< NOTE 2 .050MAX. NOTE 2 .260 7340 L i .080 .076 .360 M I N . - .968 ~ .962 I , r .670