PN2369 Search Results

Tf 227

Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector

PN2369

Abstract: transistor bc 331 BC 331 Transistor 100MHZ
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PN2369 NPN SILICON HIGH SPEED SWITHCHING TRANSISTORS TO-92 Plastic Package E BC LOW POWER FOR HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: PN2369 PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Contextual Info: PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

PN2897

Abstract: PN2857
Contextual Info: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO CBO @ VCB IV I M IN I V M IN (V I M IN f« n A ) MAX IV ) HFE @ VC & 1C M IN MA* IV i i * "A i FT COB i |. n m a • lM H ; i PN2353 PN2368 PN2369 PN2369A PN2405 NPN TO-92 (721 NPN TO-92 (72) NPN TO-92 ( 72) NPN TO-92 (72)

PN2369A

Contextual Info: S i M 1 C O N B U C T O P3 PN2369A MMBT2369A B / MMPQ2369 SOT-23 MMPQ2369 SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d fo r high s p e e d s a tu ra tio n sw itc h in g a t c o llec to r c u rre n ts of 1 0 m A to 1 0 0 m A . S o u rc e d from P ro c e s s 2 1 .

PN2369

Abstract: PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30 MMBT2369
Contextual Info: MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol

PN2369A

Abstract: SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2369A NPN switching transistor Product specification Supersedes data of 1999 Apr 14 2004 Dec 08 Philips Semiconductors Product specification NPN switching transistor PN2369A FEATURES PINNING • Low current max. 200 mA

transistor bc 331

Abstract: PN2369 BC 331 Transistor 100MHZ
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer PN2369 NPN SILICON HIGH SPEED SWITHCHING TRANSISTORS TO-92 Plastic Package E BC LOW POWER FOR HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

PN2369

Abstract: PN2369A BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2369; PN2369A NPN switching transistors Product specification Supersedes data of 1997 May 07 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A FEATURES

Contextual Info: SEMICONDUCTOR • PN4275 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted

PN2369A

Abstract: PN2369 BB313
Contextual Info: b'îE T> N AMER PHILIPS/DISCRETE • ^ 5 3 ^ 3 1 GDEflGSQ 77S « A P X PN2369 PN2369A L SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in plastic TO-92 envelope intended fo r switching applications. Q UICK REFERENCE D A T A Collector-em itter voltage

2N5769

Contextual Info: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: PN2369 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N5769

Contextual Info: SEMICONDUCTOR 2N5769 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

PN2369A

Abstract: MMBT2369A MMPQ2369 transistor GC cd rjr ce transistor
Contextual Info: s s vis z;-c; molj z t o h PN2369A MMBT2369A MMPQ2369 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Màximum RdtinÇjS T A = 2 5 ° C u n le s s o th e r w is e n o te d

2N5769

Abstract: PN2369A
Contextual Info: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

switching transistor 331

Abstract: CBVK741B019 F63TNR MMBT2369A PN2222N PN2369A 1073 PN222N label
Contextual Info: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol

switching transistor 331

Abstract: CBVK741B019 F63TNR MMBT2369A PN2222N PN2369A
Contextual Info: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol

Contextual Info: Saturated Switching Transistors Part No. Polarity VCEO V Bipolar Transistors hFE @ VCE & IC Min. Max. VCE(sat) & VBE(sat) @ IC & IB VCE IC (V) t(off) Pins Package (mA) (ns) 123 Bulk/Reel Max. (V) IC IB (mA) Max. (V) (mA) PN2369A NPN 15 40 120 1.0 10 0.20

Contextual Info: N AMER PHILIPS/DISCRETE b'lE » bb53^31 0D26D50 775 • APX PN2369 PN2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in plastic TO-92 envelope intended fo r switching applications. Q UICK REFERENCE D A T A Collector-em itter voltage

PN2369

Contextual Info: PN2369 PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Contextual Info: SiMIOONgUCTOB PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings TA = 25°C unless otherwise noted

PN2369A

Abstract: I 348
Contextual Info: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol