2N40 Search Results

2N404

Abstract: MPS404 2n404a a5t404
Contextual Info: TYPES A5T404, A5T404A, A8T404, A8T404A P-N-P SILICON TRANSISTORS _B U L L E T I N N O . O L -S 7 3 1 1 9 7 9 , M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A • A5T404, A5T404A Have Standard TO-18 100-mil Pin-Circle Configuration

2N4001 diode

Abstract: diode 2n4001 2n4001 diode 2N4000 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode
Contextual Info: TYPES 2N4000, 2N4001 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS o f TM • 15 W at 100°C Case Temperature £| • Max VcE iai of 0.3 V at 0.5 • Max ton of 300 nsat 0.5 A lc • Min f T of 40 MHz Alc g |

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

PN4092

Abstract: IC SST4091 pn4092* equivalent SS 200 700 PN4093
Contextual Info: SILICONIX INC lflE » • PN4091 SERIES C T" S ilic o n ix J.Æ Ô55M735 G013T5G 3 incorporated T -3 S -2 S N-Channel JF E T The PN4091 Series Is the plastic equivalent of our popular 2N4091 Series. These devices are especially well suited for analog switching

2N4071

Abstract: 2N6277 JANTX 2N6277 2N4070
Contextual Info: A POWERHOUSE BIPOLAR Î 11 NPN PLANAR POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 * ’A DEVICE TYPE PEAK ßVcEO 'c VOLTS AMPS VCE (sal) hFE min/max •C @ V CE A V max VOLTS c A @ 'b A 2N4070 100 10.0 40-120 5.0/5.0 0.6 5.0/0.5 2N4071 150 10.0 40-120

2N4092

Abstract: 2N4091 Siliconix JFET Duals 2N409XCHP 2N4093
Contextual Info: SILICÔNIX INC 1ÖE D • 055^4735 QG13Ö17 T ■ 2N4091 SERIES - JANTX, JANTXV .HTSSsSi N-Channel JFET The 2N4091 Series is an all-purpose JFET analog switch which offers low on-resistance, good isolation and very fast switching. Its JAN, JANTX, and JANTXV certification make this device a perfect

2N4058

Abstract: A5T4058 A8T4061 a5t37 IR 4062 2n4062
Contextual Info: TYPES 2N4058 THRU 2N4062, A5T4058 THRU A5T4062, A8T4058 THRU A8T4062 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 2 . M A R C H 1973 S IL E C T t TR A N SISTO R S* • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

2N4004

Abstract: 2N4005 diode ln 4004 silicon diode 4004
Contextual Info: TYPES 2N4004, 2N4005 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS NO. DL-S 668607, SEPTEMBER • 20 A Rated Collector Current • 40 Watts at 100°C Case Temperature • Maximum V a sat of 1 V at 20 A • Maximum V BE of 1.6 V at 20 A • Maximum ton of 1 /¿s at 10 A

2N4033

Abstract: transistor 2N4033 2N4030 2N4031 2N4032 2N4030-2N4031
Contextual Info: 2N4Ö3Ö to 2N4033 J PHILIPS INTERNATIONAL 5bE D • 7110 0S b V 00M2b5b 73b Ml PHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in T O -39 metal envelopes primarily intended fo r large signal, low-noise, low-power audio frequency applications fo r industrial service.

bc856 to 92

Abstract: bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 8C556 2N3859A NATIONAL SEMICONDUCTOR T0-237
Contextual Info: ]> • £>501130 0 0 3 T 5 1 b General Purpose Amplifiers and Switches continued; Devices (Volts Min PNP NPN 65 (mA) Max Min Max 450 BC546 100 110 BC846 100 110 2N4036 60 hFE@ lc k V CE0(m b 1) fT @»c mA (MHz) Min mA NF (dB) Max (mW) @25°C 2.0 300 Typ

transistor 2N4033

Abstract: 2n4033 datasheet 2N4033
Contextual Info: 2N4033 SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N4033 is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. c u d TO-39 e t le s t o r P INTERNAL SCHEMATIC DIAGRAM

TO111

Abstract: TO61 U 114
Contextual Info: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8

2N4033 equivalent

Abstract: motorola 2n4033 transistor 2N4033 2N4032 2N4033 1N916 2n4032-2n4033
Contextual Info: MOTOROLA Order this document by 2N4032/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors LAST SHIP 21/03/00 2N4032 2N4033 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 3 Rating Symbol 2N4032 2N4033 Unit Collector – Emitter Voltage VCEO – 60 – 80

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

2N4012

Abstract: rca rf overlay transistor "MC 150" transistor MC 150 transistor rca rf transistor rca 2N4012 TI102 Frequency Tripler varactor transistor 2N4012
Contextual Info: File No. 90 RF P o w e r T ra n s is to r s Solid State Division 2N4012 H ig h -P o w e r S ilic o n N -P -N O v e rla y T ra n s is to r For Applications as a Frequency M ultiplier Into the U H F or L-Band Range Features • 2 .5 W ou tput w ith 4 dB conversion gain m in. as tripler to 1 G H z

N706A

Abstract: BC107 N706 N3053 BC178 2N1131 2n3053 2N4037 2N696 2N697
Contextual Info: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

2N4026

Contextual Info: 2N4026 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N4029

Contextual Info: Data Sheet No. 2N4029 Generic Part Number: 2N4029 Type 2N4029 Geometry 6700 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/512 Features: • • • • General-purpose transistor for high speed switching and driver applicatons. Housed in a TO-18 case.

2N4033

Abstract: transistor 2N4033 2N4030 2N3020 2N4032 2N3019 2N3107 2N3108 2N4031 pnp for 2n3019
Contextual Info: 2N4030 2N4033 through PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES iS K 4 •* I CASE TO-39 THE 2N4030 THROUGH 2N4033 ARE PÏÏP SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICA­ TIONS UP TO 1 AMPERE. THE 2N4030, 2H4031, 2N4032,