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    2N6275 Search Results

    2N6275 Datasheets (28)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N6275
    On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=50 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=250 Original PDF 172.16KB 6
    2N6275
    On Semiconductor High-Power NPN Silicon Transistor Original PDF 70.55KB 8
    2N6275
    Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=50 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=250 Original PDF 10.64KB 1
    2N6275
    Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF 404.58KB 5
    2N6275
    API Electronics Short form transistor data Short Form PDF 61.18KB 1
    2N6275
    Diode Transistor Silicon Transistors Scan PDF 80.41KB 1
    2N6275
    Diode Transistor Transistor Short Form Data Scan PDF 80.92KB 1
    2N6275
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 293.69KB 7
    2N6275
    Motorola The European Selection Data Book 1976 Scan PDF 55.25KB 1
    2N6275
    Motorola European Master Selection Guide 1986 Scan PDF 57.68KB 1
    2N6275
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 80.29KB 1
    2N6275
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 60.8KB 1
    2N6275
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 161.24KB 1
    2N6275
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 162.8KB 1
    2N6275
    Unknown Transistor Replacements Scan PDF 92.57KB 1
    2N6275
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 117.61KB 1
    2N6275
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 85.88KB 1
    2N6275
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 98.35KB 1
    2N6275
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 30.72KB 1
    2N6275
    New England Semiconductor BIPOLAR NPN TRANSISTOR TO-3 Scan PDF 35.42KB 1
    SF Impression Pixel

    2N6275 Price and Stock

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    Microchip Technology Inc 2N6275

    Transistor - NPN Silicon - Power - 120V - 50A - 30 MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics 2N6275
    • 1 -
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    • 100 $88.66
    • 1000 $88.66
    • 10000 $88.66
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    Avnet Americas 2N6275 Bulk 50 Weeks 100
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    • 100 $96.17
    • 1000 $88.77
    • 10000 $87.65
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    Mouser Electronics 2N6275
    • 1 $96.94
    • 10 $96.94
    • 100 $96.94
    • 1000 $96.94
    • 10000 $96.94
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    Newark 2N6275 Bulk 500
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    • 100 -
    • 1000 $96.94
    • 10000 $96.94
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    Microchip Technology Inc 2N6275 28 Weeks
    • 1 $96.94
    • 10 $96.94
    • 100 $96.94
    • 1000 $96.94
    • 10000 $96.94
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    Onlinecomponents.com 2N6275
    • 1 -
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    • 100 $88.66
    • 1000 $88.66
    • 10000 $88.66
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    GTCAP 2N6275

    POWER BIPOLAR TRANSISTOR, 50A I(C), 120V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AE, METAL, 2 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6275 5
    • 1 $100.29
    • 10 $90.26
    • 100 $90.26
    • 1000 $90.26
    • 10000 $90.26
    Buy Now

    Motorola Semiconductor Products 2N6275

    POWER BIPOLAR TRANSISTOR, 50A I(C), 120V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AE, METAL, 2 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6275 4
    • 1 $65.19
    • 10 $65.19
    • 100 $65.19
    • 1000 $65.19
    • 10000 $65.19
    Buy Now

    2N6275 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n6277

    Contextual Info: 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector Emitter Sustaining — 50 AMPERE POWER TRANSISTORS


    Original
    2n62742n62752n6277204ae+2r145252n6274/d PDF

    2N6277

    Abstract: 2N6277 applications 2n6275 2n6274 of transistor 2n6277 transistor 0440 MOTOROLA 2N6277
    Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 2N6275 2N6277* High-Power NPN Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry pow er am plifer and sw itching circuit applications. • • • • • High Collector Emitter Sustaining —


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    2n6274/d2n62742n62752n6277+697a-05o-204ae2n6277 applicationsof transistor 2n6277transistor 0440motorola 2n6277 PDF

    TC40U250

    Abstract: GENTRON ES BT082 GENTRON BT081 2SC1442 entron
    Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 SDT79823 SDT79823 SCA14026 SCA14027 2N6060 2N6062 2N6274 2N6278 ~~~~5~ 25 30 SCA14024 SCA14025 2N6032 2N6275 2N6279 BUT90 BUT90 BUT90 ~~~~g 35 40 BUV60 BUW50 (A) BUV20 BUX20 2N6276 2N6280 SML55405 PT7508


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    sml96303tc40u250bur202n5685+10pt5501sca14028sca140292n5686gentron esbt082gentronbt0812sc1442entron PDF

    2n6277

    Abstract: 2N6274 2N6275 MOTOROLA 2N6277 transistor 2N6274
    Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 2N6275 2N6277* High-Power NPN Silicon Transistors . . . designed for use in industrial—military power amplifer and switching circuit applications. • • • • • High Collector Emitter Sustaining —


    OCR Scan
    2n6274/d2n62742n62752n6277+32n6377-79motorola 2n6277transistor 2n6274 PDF

    Contextual Info: 2N6275 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6275o204ae17-jul-02 PDF

    semelab 2N6287

    Abstract: 2N6378E
    Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300


    OCR Scan
    2n62702n62712n62742n6274a+82n62752n6275a2n62762n6276a2n62772n6277asemelab 2n62872n6378e PDF

    to204ae

    Abstract: 2N6275A
    Contextual Info: 2N6275A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6275ao204ae1-aug-02to204ae PDF

    Contextual Info: 2N6275A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6275ao204ae18-jun-02 PDF

    2N6277

    Abstract: 2N6275 1N3879 2N6274 2N6377 2N6277 applications
    Contextual Info: ON Semiconductort 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device 50 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS


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    2n62742n62752n6277204ae+5r145252n6274/d1n38792n63772n6277 applications PDF

    Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 * Tc = 25°C ’ Typical 6 DEVICE TYPE 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 2N6338 2N6340 2N6341 2N6354 2N6510 2N6511 2N6512 2N6677 2N6678 2N6686 2N6687


    OCR Scan
    2n60322n60332n62742n6275+62n62762n62772n63222n63232n63262n6327 PDF

    JANTX 2N6340

    Abstract: JANTX 2N6341 2N6338A 2N6277A 2N6274A 2N6275 2N6276 2N6322 2N6323 2N6326
    Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 Ic/ V c E min/max @ A/V DEVICE TYPE V ceo (sus) VOLTS Ic (max) AMPS 2N6032A 90 50 10-50@50/2.6 2N6033A 120 40 2N6274A 100 2N6275 hjT E @ VcE(Mt) @ Ic^B (V @ A/A) p * r D f T WATTS (MHz)


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    2n6032a2n6033a2n6274a2n6275+92n62762n6277a2n63222n63232n63262n6327jantx 2n6340jantx 2n63412n6338a PDF

    Contextual Info: 2N6275A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6275ao204ae17-jul-02 PDF

    power BJT

    Abstract: 2n6275 "Power BJT"
    Contextual Info: 2N6275 Si NPN Power BJT 15.98 Transistors Unsorted Transistors Other American Micr. Page 1 of 2 Enter Your Part # Home Part Number: 2N6275 Online Store 2N6275 Diodes Si NPN Power BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    2n6275com/2n6275power bjt PDF

    2N6275

    Contextual Info: 2N6275 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6275o204ae1-aug-02 PDF

    Contextual Info: <sS&mi-Conductor ^Products., Una. TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6274 2N6275 2N6277 High-Power NPN Silicon TVansistors . . . designed for use In industrial-military power ampllfer and switching circuit


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    2n62742n62752n6277-150vdc+22n6377-79cc-80v PDF

    AP1069

    Abstract: 2N6274 AP1112 to63 2N5685 2N5686 2N5926 2N6032 2N6215 2N6275
    Contextual Info: A P I ELECTRONICS INC 0043592 A P I _ 2^ ELECTRONICS DE 1 00435^5 DOODEaì S | ~ INC ZbC 00239 ~fZ33~£ COLLECTOR CURRENT = 5 0 AMPS NPN TYPES Device No C ase VCBO Volts VCEO (sus) Volts 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278


    OCR Scan
    2n56852n56862n59262n6032+92n62152n62742n62752n62762n62772n5968ap1069ap1112to63 PDF

    2SA1046

    Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275


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    2n62742n62752n62772n6377+11power32tip73btip742sa10462n6275 equivalentbu108tr tip2955motorola 2n6277bu806 complementbu326bu100 PDF

    2N6275

    Contextual Info: 2N6275 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2n6275o204ae18-jun-02 PDF

    2N4071

    Abstract: 2N6277 JANTX 2N6277 2N4070
    Contextual Info: A POWERHOUSE BIPOLAR Î 11 NPN PLANAR POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 * ’A DEVICE TYPE PEAK ßVcEO 'c VOLTS AMPS VCE (sal) hFE min/max •C @ V CE A V max VOLTS c A @ 'b A 2N4070 100 10.0 40-120 5.0/5.0 0.6 5.0/0.5 2N4071 150 10.0 40-120


    OCR Scan
    t0-2042n40702n40712n5622+82n56242n56262n56282n62742n62752n62762n6277 jantx2n6277 PDF

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Contextual Info: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


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    sfi4fl35et-33-15tc-292n5929+92n59302n59312n59322n59332n59342n5935dts-4252n59362n5937 PDF

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Contextual Info: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


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    bsb4clc132n5933d2n5934d2n5935d+162n5936d2n66772n66782n66862n66872n6688ic 80302n657510j2250102n62582n65802n658330014lg 5052n6249 PDF

    Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan
    5-500v2n37732n37882n3902+62n40702n40712n43472n43482n49132n1487 PDF

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


    OCR Scan
    0qd007flt0-1022n5863mj2965+6to61 package12j52n83072n37132n49012n3447 PDF

    LT082

    Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
    Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max


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    sdt55960sml55462ptc66832sd642+14sml55464d60t4040d62t4040sdt5825sdt5855sdt5826lt082lt081lt089lt081ssml55405transistors 1ubur20tc15u800 PDF