2N5685 Search Results

2N5685

Abstract: 2N5686 1000C 2000C
Contextual Info: TECHNICAL DATA 2N5685 JAN, JTX, JTXV 2N5686 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/464 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N39024

Abstract: jantx 2n5302
Contextual Info: BIPOLAR N P N P O W E R T R A N S IS T O R S PEAK PACKAGE TO-204 TO-3 VCI (sot) DEVICE bvceo •c hFE TYPE VOLTS AMPS 60 10.0 2N3716*' 80 10 2N39024* 325 2.5 30-90 2N5302’ * 60 30.0 15-60 2N5303* 80 20.0 15-60 10.0/4.0 1.5 10.0/2.0 2N5685* 60 50.0 15-60

2N5685

Contextual Info: 2N5685 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5685

Abstract: 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278
Contextual Info: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 INC D O D O S B 11] S ZbC 0 0 2 3 9 |~ D ~fZ33~£ C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032

2N5685

Abstract: leistungstransistoren 2N5683 2N5684 2N5686 BU105
Contextual Info: TY P ES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER TRAN SISTO RS FOR POW ER-A M PLIFIER A N D HIGH-SPEED -SW ITC H IN G A P PLIC A TIO N S D ESIG NED FOR C O M P LE M E N TA R Y USE W ITH 2 N 56 83, 2N 5684 • 300 Watts at 2B°C Case Temperature •

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4

2N3902

Abstract: 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511
Contextual Info: SEM ICO NDU CT OR TECHNOLOGY OSE D | fll3b4Sñ □□□□S53 E | ~ 7“<- 3 3 - o / SEM ICONDUCTOR TECHNOLOGY, INC. ~ o.13l S r^ J,ay o ! ! Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTO RS

Contextual Info: SEMELAB LTD 37E T> | fil33167 0000D23 3 1 TVpe No. Reliability Polarity Option 2N5656 2N5657 2N5663 2N5664 2N5665 SCREEN HI-REL HI-REL NPN NPN NPN NPN NPN 2N5666 2N5667 2N5671 2N56722N5675 HI-REL HI-REL CECC CECC HI-REL NPN NPN NPN NPN PNP 2N5676 2N5679 2N5680

bsc 68e

Abstract: 2N5684 motorola 2N5685 MOTOROLA 2N5686 2N5684 2N5685 3015 hj N5685 J5685 PNP 2N5684
Contextual Info: MOTOROLA O rder this docum ent by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 56 84 High-C urrent Com plem entary Silicon Power Transistors NPN 2 N 56 85 . . . designed for use in high-pow er amplifier and switching circuit applications. • • • 2 N5 6 8 6 *

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

FT428

Abstract: MPS-U05F 2N3440 fairchild FTD5321 2N3741 2N4899 2N4911 D40D10F D40D13F D40D7F
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING VqEO Item DEVICE NO. Polarity NPN I PNP v CEO V Max hFE @ ic A Min/Max v CE(sat) V Max @ ic A (Cont'd) PD(Max) *T MHz Min(Typ) TC=25°C 1.0 4.0 25 Package No. Ic = 1.0 A Max Continuous (Cont'd)

mpsu57 cross

Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60

1040B

Abstract: 2N3910 svt6062 2n5100
Contextual Info: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.

FT3055

Abstract: 2N3055 TO220 SE9302 mj2955 TO-220 2N3440 2N5683 2N5684 2N5685 FT431 2NS840
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)

2N3902

Abstract: T0204 2N5685
Contextual Info: A POWERHOUSE BIPOLAR NPN M ESA POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 r« si VH| % TO-63 • DEVICE TYPE PEAK bvceo 'c VOLTS AMPS hFE min/max ■C@ VCE A V VCE s;M» max •c ü VOLTS A A 2N3715* 60 10.0 50-150 1.0/2.0 0.8 5 0 C.5 2N3716* 80 10.0

power transistors cross reference

Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

2N6258

Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
Contextual Info: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN

FT3055

Abstract: 2NS840 2N3440 2N5683 2N5684 2N5685 2N5686 FT47 FT48 FT49
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)

FT3055

Abstract: 2N3055 TO-220 SE9302 2N6385 MJ2501 MJ3001 SE9301 SE9304 SE9305 SE9401
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING V q e O (Cont’d) DEVICE NO. Polarity NPN I PNP Item •c = 10.0 A Max Continuous 1 SE9304* SE9404* hFE @ ic v CEO V A Max Min/Max *T MHz Min(Typ) PD(Max) W T C=25°C Package

BUX 115

Abstract: 2N2646P bux 42 pnp bux ksp1173 2N5662 2N5663 2N6251 KS6118 KS6121
Contextual Info: TRANSISTORS DE PUISSANCE NPN TRIPLE DIFFUSÉ COMMUTATION RAPIDE power transistors (NPN triplo diffused fast switching) Ui u. JC VcEO lc max. TYPES / lc V c e sat / >c ! 'b Boitier td + tr ts tf Iß s) Case 113= 1£> »13= 113= 1X3= nxy r» x > nxy no r» 0

SPP2144

Contextual Info: 8440355 SPACE SPACE POWER 89C POWER E L E C T R O N I C S ELECTRONICS ~fl^ 00114 D DE~|fl4403S5 0000114 4 |~~ Hi-Rel PLANAR P O W E R - 6 0 AMP NPN T A T A - ~5 5 C O L L E C T O R T A = 150C 1 0 1c C U R R E N T . I Q I A M P S IOC 10 C U R R E N T C T A '

2N5610

Abstract: 2N5672 2N5606 2N5612 2N5614 2N5616 2N5618 2N5622 2N5624 2N5626
Contextual Info: * 1 1 ^ Il NPN D E V IC E PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREA KD O W N VO LTA G ES S A T V O L T A G E S M a x . h FE CASE V CB V CE V EB V CE (V) lC (A ) M in. M ax. (A) 'B (A) V CE (V) V BE (V) 2N5606 TO-66 80 60 6 5 2.5 70 200 2.5 0.5