2N5926 Search Results

2N5926 JANTX

Abstract: 2N5926
Contextual Info: NOTICE OF CANCELLATION INCH-POUND MIL-S-19500/447A NOTICE 3 13 January 2005 SUPERSEDING NOTICE 2 12 May 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON, POWER TYPE 2N5926 JANTX AND JANTXV MIL-S-19500/447A, dated 10 June 1991, is hereby canceled. Future acquisition for this material should refer to

c2689

Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
Contextual Info: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n

AP1069

Abstract: AP1112 2N5489 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275
Contextual Info: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 ZbC INC D O D O S B 11] S |~ D ~ fZ 3 3 ~ £ 00239 C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032

2N5685

Abstract: 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278
Contextual Info: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 INC D O D O S B 11] S ZbC 0 0 2 3 9 |~ D ~fZ33~£ C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032

TO114

Abstract: to63 SDT96304 SDT55405 SDT96306 2N5926 2N6060 2N6215 DSASW0036862 2N6279
Contextual Info: VCE Device Type VCEO hFE V Min/Max 2N5926 2N6060 2N6215 2N6278 2N6279 2N6280 2N6281 SDT55405 SDT55407 120 100 80 100 120 140 150 150 200 10/40 25/120 25/150 30/120 30/120 30/120 30/120 10/50 10/50 50.0 20.0 25.0 20.0 20.0 20.0 20.0 50.0 50.0 SDT79823 80

AP1069

Abstract: 2N6274 AP1112 to63 2N5685 2N5686 2N5926 2N6032 2N6215 2N6275
Contextual Info: A P I ELECTRONICS INC 0043592 A P I _ 2^ ELECTRONICS DE 1 00435^5 DOODEaì S | ~ INC ZbC 00239 ~fZ33~£ COLLECTOR CURRENT = 5 0 AMPS NPN TYPES Device No C ase VCBO Volts VCEO (sus) Volts 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278

LT082

Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max

Contextual Info: ‘BIG IDEAS IN BIG POWER ” H i • PowerTecn 90 AMPERES JAN TX2N 5926 FT - 7507 FT - 7508 SILICON VMPIMTRANSISTOR FEATURES: v CE sat 0.6 V @ 50 A V 1.2 V @ 50 A BE 'FE t f . 5 mîn @ 90 A 2 m sec I 1.2 A @ 100 V S/b ■g/k.

2N5926

Abstract: JANTX2N5926 TX2N5926 powertech
Contextual Info: BIG IDEAS IN BIG POWER ” • PowerTech 90 AMPERES JAN 2N5926 PT - 7507 PT - 7508 SILICON IMPIM TR A N SIST O R FEATURES: v CE sat 0.6 V @ 50 A VBE' 1.2 V @ 50 A 'F E . 5 m in @ 9 0 A I 2 y sec E g ^ j . 1.2 A @ 100 V

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840

PT-8502

Abstract: MT-1042 pt-9504 2N5928 TO114 1042 TO114 package PPS-250 TO63 package PT-7501
Contextual Info: Click on the underlined number to see specs on the part or package. Please contact the company for more information on other parts and packages. Part Number 70 AMPS PT-7501 PT-7502 PT-7503 PT-7509 PT-3512 Voltage Package 100 120 150 200 325 TO-63 TO-63 TO-63

power tech 32953

Abstract: 2N5926 ASME-14 2N5926 JAN 2N5926 JANTX certificate of compliance jantx
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/447 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A 1 2 4 PREPARED BY Roger Kissel

2N5926

Abstract: 0741D powertech powertech pt7508 2N5552 PT-7507 PT-7508 TG-63
Contextual Info: 17E D • “BIG IDEAS IN BIG POWER* W ÊÊgm 72^7^4 □OQGS'iT 7 ■ ■ I POWERTECH INC P o w T -S 3 -/ S e r T S O A m e M c P E h R E S JAN TX2N592B FT - 7507 FT - 750B SILICON IMPISI TRANSISTOR FEATURES: V CE satJ. BE- 0.6 V @ 5 0 A FE '

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

100 amp power transistor

Abstract: NPN transistor Ic 50A 2N5926 NPN 20 Amps POWER TRANSISTOR to63 NPN 1.5 AMPS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR to 63 case 5 amp npn transistor NPN 25 Amps POWER TRANSISTOR to63
Contextual Info: SFT5926/63 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 150V, 100 AMP POWER TRANSISTOR SILICON NPN Part Number / Ordering Information 1/

2N5940

Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
Contextual Info: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP

2N6960

Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
Contextual Info: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50

04029-01TX

Abstract: QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953 ASME-14
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/440 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A Original date of drawing

2N4211

Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
Contextual Info: Table 1 A B C D E F G H I 1 163-04 1748-0630 1768-0610 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2 163-06 1748-0810 1768-0620 2N1015A 2N2016 2N2740 2N3771 2N4003 2N6047 3 163-08 1748-0820 1768-0630 2N1015B 2N2109 2N2741 2N3772 2N4210 2N6048 4 163-10 1748-0830 1768-0810 2N1015C 2N2110

transistor 2N 2222 h 331

Abstract: transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4
Contextual Info: I INCH-PQUKITT M IL-S-l9500/447A ER 10 J u n e 1991 ctiDrDcrntkir u * nu MIL-S-19500/447(ER) 19 February 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, MPN, SILICON, POWER, T V O r I ITL 9 1 I C Û O C , u1nA nM IT Va nA Mn uf\ ul An Un Ti Va Vi