2N1674
Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
|
Original
|
mps5858bfr50tipp31bst4341+14bsw652n15722n7382n25172n7552n1674emihus2n1605abc4472n17242n28912n1666bsw392n1664
|
PDF
|
3SM diode
Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
|
Original
|
mps5858bfr50tipp31bst4341+15bsw652n15722n7382n25172n7553sm diode2n22432n2222b2n22442n22822n22502n23162n22492n2303 sot-232n2306
|
PDF
|
2N1893 motorola
Abstract: BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
|
Original
|
mps5858bfr50tipp31bst4341+15bsw652n15722n7382n25172n7552n1893 motorolabsw322n17642n1742bc447mpsh042n18412n19562n1821bsw39
|
PDF
|
2N2875
Abstract: 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
|
Original
|
mps5858bfr50tipp31bst4341+15bsw652n15722n7382n25172n7552n28752n28362n27822n27732n28692n2840 rca2n27502n27682n1893 motorola2n2857 semicoa
|
PDF
|
BSW65
Abstract: ST4341 2N2243AL BSW32 2N2364 LOW-POWER SILICON NPN 2N2891 BCX31 BSW39 2n738
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
|
Original
|
mps5858bfr50tipp31bst4341+12bsw652n15722n7382n25172n7552n2243albsw322n2364low-power silicon npn2n2891bcx31bsw39
|
PDF
|
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
|
PDF
|
UM9C
Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma
|
OCR Scan
|
dddqs162n22422n23682n2369+82n2369a2n2410n24752n24812n25012n2651um9cj 2n930
|
PDF
|
2N2458
Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386
|
Original
|
2n19722n909st6600st6601+15sa2715bsx702sc5622n4792n479a2n24582n2537 texas2n25512n24572n2429sgs-ates c4262n24252n23982n2431bf253
|
PDF
|
switch NPN
Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV
|
Original
|
2n7032n706c2n7082n709a+102n7172n718a2n719a2n720a2n7212n722aswitch npnbsy182n23692n4390
|
PDF
|
2N3633
Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min
|
OCR Scan
|
2n22422n23682n23692n2369a+72n24102n24752n24812n25012n26512n27102n3633
|
PDF
|
JAN2N760A
Abstract: 2N3692 2n2510 2N3565
Contextual Info: N PN Transistors low I vel amps TVpe Case No Styla VCEO "eso IV! IV! M,n MIn IV! [ M,n Vcso MIn MIX VCEI . t VSEI .t! IV! 80 IV! Ma. NF Cob IpF! IdS! MIX Ma. Ma. 06 1.1 10 50 1 1 Test CondItIon Process No. 2N760 TO•18 45 45 200 30 76 333 1 5 2N760A TO'18
|
Original
|
2n7602n760ajan2n760a2n929+5jan2n929157khz2n36922n25102n3565
|
PDF
|
2n3298
Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max
|
OCR Scan
|
2n16132n16i3a2n1613b2n17i1+152n17iia2n3725a2n39472n40b02n41372n42072n32982n23602n26942n32082n3212n321din2192n2195b2n2888
|
PDF
|
2N1026
Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF
|
OCR Scan
|
2n327a2n327b2n328a2n328b+92n329a2n329b2n7602n760abt29462n29462n10262n10252n2708
|
PDF
|
2N9308
Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5
|
OCR Scan
|
00dds7t-a7-012n49712/3s+1530/s92n3725a2n39472n40802n41372n42072n93082n221ba2n69s2n33042m21932ni8932n236s2n4082n238
|
PDF
|
|
|
AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
|
OCR Scan
|
trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
|
PDF
|
cs9011j
Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •
|
OCR Scan
|
2n15072n15662ni6132n1889+162n18902n18932n19732n19742ni975o-237cs9011jmps151pn5180mps4424bc56088c527-252n3304bc5568pn2897mps9633c
|
PDF
|
2N760A JAN
Abstract: 2N5856 2n3645 2n2510 2n5857 2N2509 2n760 2N5858
Contextual Info: TRANSISTORS—SMALL SIGNAL PNP GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CE(sat) ^F E V CEO *off PD w p Ta *V CER * h FE VOLTS TYPE D @ *c VOLTS @ lc pF
|
OCR Scan
|
2n43542n3645mpsa55o-105+8se60202n760a jan2n58562n25102n58572n25092n7602n5858
|
PDF
|
2N3340
Abstract: 2N3581 2N2520 2N5609 2N5003 2N5005 2N5287 2N5312 2N5316 2N5607
Contextual Info: 8134693 SEMICOA MD ] e | 0134t. ^ □□QDIE'J 1 | _,T :<5 7 - 0 \ PNP SILICON POWER TRANSISTORS Cont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Type No. PNP Dissipation @25°C (Case) Watts 2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312
|
OCR Scan
|
2n52872n50032n50052n5607+92n56092n53162n53122n61862n61872n58532n33402n35812n2520
|
PDF
|
BC140 equivalent
Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB
|
OCR Scan
|
2n327a2n327b2n328a2n328b+162n329a2n329b2n7602n760a502n329abcy56bc140 equivalent2n2484 equivalent transistorsbc141 equivalentbcy59 equivalentbc160 equivalent2n930 equivalentbc107 equivalent transistors2n3019 equivalentbc177 equivalentbc107 pnp equivalent
|
PDF
|
2N2458
Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec
|
Original
|
2n2458trf648sgs-ates transistorsfbase-f package+62n24252n2455westcode diode2n25342n24742n2431
|
PDF
|
2N2708
Abstract: 2N760 2N327B 2N2511
Contextual Info: LOW LEVEL AMPLIFIERS Electrical Characteristics @ 25 C M axim um Ratings Type NPN Pd Am bient mW PNP NF @ f V C E Sat @ l c / lß VcB V o lts VcE V olts V eb V o lts mA M in /M a x Case V o lts Geometry & Character ization Applicable Letter MOT. 2N327A
|
OCR Scan
|
2n327a2n327b2n328a2n328b+82n329a2n329b2n7602n760a2n9292n929a2n27082n2511
|
PDF
|
1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
|
OCR Scan
|
semi-820byx22-400byx22-600byx22-800+14byx26-60yx26-150byx36-1byx36-3001.0 k mef 250me4003me4002ma0411transistor me6101transistor bc 172b2n2959transistor bf 1752n51732n3072
|
PDF
|
2n5183
Abstract: BC187 Small Signal Transistors TO-18 Case
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV
|
Original
|
2n7032n706c2n7082n709a+92n7172n718a2n719a2n720a2n7212n722a2n5183bc187small signal transistors to-18 case
|
PDF
|
2n744
Abstract: LM3661TL-1.40
Contextual Info: Small signal Transistors TO-18 Case T Y P E NO. DESC RIPTIO N 00 V (V) (HA) MIN MIN MIN MAX *IC ES " IC E V @ 1C @ V C E V C E(SAT ) @ «C Cob hFE B V C B O B V C EO B V e b O C B O * V C B O <raA) (V) MIN M AX (V) (V) (mA) (PF) M AX M AX ton toff (ns) IT
|
OCR Scan
|
2n7032n706c2n7082n709a+82n7172n718a2n719a2n720a2n7212n722a2n744lm3661tl-1.40
|
PDF
|
