2SC2669 Search Results

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

bfw34 diode

Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2SC2669

Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
Contextual Info: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. 4.2 MAX. High Power Gain : Gpe = 30dB (Typ.) (f= 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage.

2SC2669

Abstract: wf-5 transistor
Contextual Info: TO SHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. 4.2MAX. ivi A X i ivi UM RAT iN G $ (Ta = 25°C)

2SC2669

Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
Contextual Info: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. 4.2MAX.

2SC2669

Abstract: cq 455 2SC2669-0 2SC2669-R 2SC2669-Y BDH100
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SC2669 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f = 10.7 MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. M AXIM UM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. | 4.2M AX.

2SC2669

Abstract: 2sc2669-o
Contextual Info: 2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2669 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV, IF stage. Absolute Maximum Ratings (Ta = 25°C)

2SC2669

Abstract: 2SC2669-O 2SC2669-R 2SC2669-Y
Contextual Info: 2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2669 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = 25°C)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

3SK73

Abstract: 3SK73Y 3SK101 3SK73 gr SC1815 2SK241GR 3SK73-Y 3SK101-Y 2SC2669 2SK241-GR
Contextual Info: [8] [ 8 ] 応用回路例 1 kΩ T6 S3 1 L5 T8 3 1.2 kΩ F 1 kΩ 0.01 µF 47 kΩ 0.01 µF 1.5 kΩ 4 x 20 BET T7 390 Ω L7 0.04 µF 10 kΩ 1 kΩ 0.01 µF 10 µF/6 WV 6 WV 10 kΩ 2 1.2 kΩ 3.3 kΩ 330 Ω 50 µF/6 WV 0.005 µF −200 µF +6 WV 6 V

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

2sc2240 equivalent

Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
Contextual Info: Surface Mount Devices 1 Super-Mini Transistors (SOT-23MOD.) Electrical Characteristics (Ta=25’ C) Application Type No. le (mA) PC (mW) TJ rc ) Mark Complementary Remarks (TO-92 Mini-transistor) Equivalent TO-92 Type No. 2SA1162 Low-frequency oompllflcation

2SC2669

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR HIGH FREQUENCY AM PLIFIER APPLIC A TION S. U n it in mm • High Power Gain : Gpe = 30dB Typ. (f= 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV, IF Stage. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~