2SC562 Search Results

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2SC5624

Contextual Info: 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0200Z Previous ADE-208-978(Z Rev.2.00 Oct.21.2003 Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz

2SC5629

Abstract: Hitachi DSA0014
Contextual Info: 2SC5629 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-980 Z 1st. Edition Nov. 2000 Features • Super compact package; (1.6 x 0.8 × 0.7mm) • High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900Mhz, VCE = 1 V)

c 4977 transistor

Abstract: 702 mini transistor 2SC5621 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN MAG 1832
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.

2SC5626

Contextual Info: 〈トランジスタ〉 2SC5626 高周波増幅用 シリコンNPNエピタキシァル形（スーパーミニタイプ） 概 要 外 形 図 2SC5626は超小形外形樹脂封止形シリコンNPNエピタ キシァル形トランジスタで高周波増幅用として設計、製

2SC5626

Contextual Info: 〈トランジスタ〉 2SC5626 高周波増幅用 シリコンNPNエピタキシァル形（スーパーミニタイプ） 概 要 外 形 図 2SC5626は超小形外形樹脂封止形シリコンNPNエピタ キシァル形トランジスタで高周波増幅用として設計、製

2SC5624

Abstract: 2SC5624VH-TL-E
Contextual Info: 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0300 Rev.3.00 Feb.21.2005 Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure; PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz Outline

005 418

Abstract: ZO 607 MA 2SC5628 2SC5628XZ-TL-E PUSF0003ZA-A SC-89
Contextual Info: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0750-0300 Previous ADE-208-979A Rev.3.00 Aug.10.2005 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 MHz, VCE = 1 V)

bfw34 diode

Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

C5622

Contextual Info: Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 26.5±0.5 • Features 2.0 Symbol Rating Unit VCBO 1 500 V Peak collector current Collector current Base current Collector power dissipation TC = 25°C

2SC5626

Contextual Info: 〈Transistor〉 2SC5626 For High Frequency Amplify Application Silicon NPN Epitaxial Type Super Mini type DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial ty pe transistor. It is designed f or high f requency amplif y application.

2SC5623

Abstract: Hitachi DSA0014
Contextual Info: 2SC5623 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-977 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 26 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz Outline

2SC5628

Abstract: ADE-208-979 Hitachi DSA0014
Contextual Info: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979 Z 1st. Edition Nov. 2000 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)

c5622

Abstract: 2SC5622 transistor c5622
Contextual Info: Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output Unit VCBO 1 500 V Collector to base voltage Collector to emitter voltage VCES 1 500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12

BTB 600 BR

Abstract: 2SC5626
Contextual Info: ‫ޓ‬ ‫ޛ‬Transistor‫ޜ‬ 2SC5626 For High Frequency Amplify Application Silicon NPN Epitaxial Type Super Mini type DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial ty pe transistor. It is designed f or high

ZO 607 MA

Abstract: 2SC5623 DSA003645
Contextual Info: 2SC5623 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-977 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 26 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz Outline

2SC5624

Abstract: Hitachi DSA0014
Contextual Info: 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-978 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18dB typ. , NF = 1.2dB typ. at f = 1.8GHz Outline

panasonic C5622

Abstract: c5622 2SC5622 2sc562
Contextual Info: Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output φ 3.2±0.1 1 500 V Collector to emitter voltage VCES 1 500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12 A Collector current IC 6

panasonic C5622

Abstract: c5622 2SC5622
Contextual Info: Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output Unit VCBO 1 500 V Collector to base voltage Collector to emitter voltage VCES 1 500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12

Contextual Info: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0750-0300 Previous ADE-208-979A Rev.3.00 Aug.10.2005 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 MHz, VCE = 1 V)

2SC5625

Abstract: isahaya
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5625 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5625 is a super mini package resin sealed silicon NPN epitaxial transistor, 2.5 It is designed for low frequency voltage application.

2SC5624

Abstract: DSA003645
Contextual Info: 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-978 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18dB typ. , NF = 1.2dB typ. at f = 1.8GHz Outline

ZO 607 MA

Abstract: zo 607 2SC5628 DSA003645 ECG 1277
Contextual Info: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979A Z 2nd. Edition April 2001 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)

Contextual Info: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0750-0300 Previous ADE-208-979A Rev.3.00 Aug.10.2005 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 MHz, VCE = 1 V)