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Contextual Info: MITSUMI 300mA LDO MM189x Series 300mA LDO Monolithic IC MM189x Series Outline This IC is a Low noise 300mA LDO. The output voltage line-up is 1.5-5V 0.1V step and a adjustable type. A protection function is built in a current limiter and a thermal shutdown.
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300mamm189xot89-5150ma |
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B0813
Abstract: PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 NA31KY NA31MH NA31 MY SK3248 NA31KI NA31MI NA31KJ NA31MJ ~~~~g: 25 30 2NS204 S15-28 SMl5501 SMl550S SMl5511 SMl5901 SMl590S SMl5911 ~~~j~~ 35 40 80Y10 80Y10 PT9787 PT9787A 2N4431 2S022S 2S0226 SOT4301
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2sc109s2ns71492pu012s0180s+14mpsu01nsou0192gu01na31kyb0813pt97878c440mj3237trw pt9787mm4048mje42cmj2841 motorolamm1758mmt2857
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MM1893D
Abstract: MM189x MM18 MM1894A limitter MM1893
Contextual Info: MITSUMI 300mA LDO MM189x Series 300mA LDO Monolithic IC MM189x Series Outline This IC is a Low noise 300mA LDO. The output voltage line-up is 1.5-5V 0.1V step and a adjustable type. A protection function is built in a current limiter and a thermal shutdown.
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300mamm189xot89-5mm1893d+4mm18mm1894alimittermm1893
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2U 37 diode
Abstract: M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 BSX46•6 MH8106 MS106 MS106 BCX55-6 TN2017 2N2017 BC141B ~g~~t~g 55 60 65 70 2N2197 BD415 2N6551 BC141C BSX46·16 BCX55·16 2SD1615 2SD1615 2S01615A 2SD1615A BD320 SD1527·8 BFR22
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220ab205ad2n49232n4000+14mm30202sd221fbcx56dtl16532u 37 diodem810skt934bdiode 2n40002n2196kt934gkt646a2n63902n2197 semelab2n2197
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MTH13N50
Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:
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mje8502ao-220ab/to-220mjf16010ao-254+12mjf16018mjf16206mth13n50mtm565mrf531mm3220mm1758mm3904mm3004mth5n100mtm26n40emth7n50
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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