2N2771 Search Results

2N1016

Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
Contextual Info: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,

2n2771

Abstract: 2N2483
Contextual Info: Search Results Part number search for devices beginning "2N2483" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N2483 NPN TO18 60V 0.05A 80 - 5/1m - 0.36W

2N2824

Abstract: 2N2819 2N2771
Contextual Info: electronics inc POWER TRANSISTORS TYPE NO. 2N2757 200 MAXIMUM RATINGS Ic B V cbo BVcto BVteo V A V V 50 50 15 30 Ic A Vce V Test Sat Voltages Conditions V be Ic le lEBO V ce A A ma V V 10 4 1.5 a> hFE MIN MAX 10 2.5 10 2 25 2 25 2N2758 200 100 100 15 30 10

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

2N2772

Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
Contextual Info: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT

LM3661TL-1.25

Contextual Info: POWER TRANSISTORS TYPE NO. TO-63 PT @ 25°C Watts MAXIMUM RATINGS B V c bo B V ceo B V ebo le V A V V Sat Voltages 3> hFE MIN MAX le A V ce VCE V be V V V Test Conditions le Ib A A lEBO ma 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15

2N2772

Abstract: 2n2770
Contextual Info: POWER TRANSISTORS Sat Voltages PT TYPE NO. @ 25°C Watts h FE M A X I M U M R A T IN C S Ic B V c b c BV ceq B V e b o V V V A i> M IN M AX Ic A Test Conditions Vet V be Ic Ib lEBO V V V A A ma r VCE 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200

2N4148

Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
Contextual Info: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.

2N2227

Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
Contextual Info: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SC2128

Abstract: 2N2773 2N3055C
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (HZ) 'CBO t0N r Max Max Max (A) (s) Max (Ohms) 140m 187m 90m 90m 175 140 175 175 175 175 175 140m 175 J 175 J (CE)*at T Oper Package Style (°C)

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

WESTINGHOUSE transistor

Abstract: Westinghouse CO 8 westinghouse relay westinghouse transistors westinghouse semiconductor westinghouse power transistor 2N2761 2N2771 2N2770 westinghouse
Contextual Info: Westinghouse Therm al Characteristics Thermal resistance, 0 jc , #C /w a tt, max. .0.5 Power dissipation, P j at T c = 7 5 °C w atts, max. 200 Typical thermal drop, case to heat sink, ° C /w a tt.0.3

2N2818

Abstract: 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766
Contextual Info: POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V c bo B V ceo B V ebo Ic V A V V Sat Voltages 3> hFE MIN MAX Test Conditions Ic A V ce VCE V be Ic Ib lEBO V V V A A ma 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15 30 10

Contextual Info: May 1998 SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N2222ADCSM CECC Dual device in CSM 2N2222AQF Quad Ceramic Flat Pack 2N2222CSM Ceramic Surface Mount 2N2222CSM CECC Ceramic Surface Mount 2N2222DCSM Dual device in CSM 2N2222DCSM CECC Dual device in CSM

2N2757

Abstract: 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766 2N2769
Contextual Info: POWER TRANSISTORS TYPE NO. TO-63 MIN MAX le A V ce VCE V be V V V Test Conditions le Ib lEBO A A ma 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15 30 10 10 4 1.5 2.5 10 2 25 2N2759 200 150 150 15 30 10 10 4 1.5 2.5 10 2 25 2N2760 200 200 200

2N2875

Abstract: 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

TO82 TRANSISTOR

Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C

2N2824

Abstract: 2N2761 2N2757 2N2758 2N2759 2N2760 2N2763 2N2764 2N2765 2N2766
Contextual Info: 8365700 SOLID POWER CORP 95C 0 0 1 1 8 SOLID POWER CORP TS D *T'S3-öl » F | fl3bS7D0 □□□□Hfl t POWER TRANSISTORS TYPE NO. TO-63 MAXIMUM RATINGS Ic B V c b o B V ceo B V ebo V A V V (5 hFE MIN MAX Ic A V CE V Sat Voltages V CE V be V V Test Conditions