NB111 Search Results

NA51W

Abstract: NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322
Contextual Info: NB311,312,313 NPN , NB321,3 2 2 ,323(PNP) NATL SEUICOND {DISCRETE} 6501130 NATL ifl EMICOND, (DISCRETE) 28C National Semiconductor r - 35601 n - 2 , } 3 ^ 0 - 7 NB311, 312, 313 (NPN) * , NB321, 3 2 2,3 N P ) 1,5ArnP com plem entary pow er drivers 2 ,3 23(P

NB111

Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
Contextual Info: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding

Contextual Info: NOTES: 1. MATERIALS AND FIWISHES PLATING THICKNESS IN MICRO-INCHES : BODY - PHOSPHOR BRONZE, NICKEL PLATING CONTACT - BRASS, GOLD PLATING INSULATOR - PTFE 2. ELECTRICAL: A. IMPEDANCE: 75 OHM B. FREQUENCY RANGE: D C -1 GHz C. VSWR(RETURN LOSS): 1.5 MAX. D. DIELECTRIC WITHSTANDING VOLTAGE: 750 VRMS, MIN.

NA21 npn

Abstract: NA21E NB111 hf amplifier 600 watts NA21 NB111E NB011 NA21EG NR001E SSL-3
Contextual Info: NATL SENICOND {DISCRETE} 6 5 0 1130 N Â T L CL z Q. CM CM < z SEMICOND, Efl DISCRETE < 28C National mim Semiconductor NA21 (NPN) N A 22(PN P) T 35561 - 2 - 9 - [T~| p a c k a g e and lead coding • 20 Volt/1.5 Amp rating ■ 1.2 Watts practical power dissipation (TO-92 PLUS TM)

40khz ultrasonic transmitter

Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k
Contextual Info: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~| package and lead coding features • 20 Volt/800 mA Amp rating

lg crt tv

Abstract: NB212 NB211 NB222 NB112EY NB111 NB022 NB022EY
Contextual Info: bSD1130 003 SST7 'NATL SEMICOND {DISCRETE} 6501130 NATL SEMICOND, Z CL CO CM CM 28C 3 5 5 9 7 D I S CR ET E D T-ll-Z 3 E JI National m m Semiconductor as CM CM CM NB221 222 2 2 3 ÎP N P ) 500m A medium current driver transistors features CM CM CÛ z Q.

40khz ultrasonic transmitter

Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY
Contextual Info: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §

NA72

Abstract: NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220
Contextual Info: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h - NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C D ISCRETE 35561 National Semiconductor T ' 2 ? - r < z a. z < Z NA 71 (NPN) NA 7 2 (PNP) ^ AmP com plem entary power tra n sisto rs IT ! packages and lead coding

capacitor discharge ignition

Abstract: NB313Y NA61W NB022EY 113D capacitor nb121 NB111 NA61 NB022
Contextual Info: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, D F | b S D 1 1 3 0 003SS77 b DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding

NB111

Abstract: npn general purpose amplifier E28C nb121
Contextual Info: ~ 2ä NATL SEHICOND {DISCRETE} 650 1130 a. Z a CO CM NATL S E M IC O N D , D E |b s a ii3 Q a a B ssT a 28C 35593 D IS C R E T E National Semiconductor T- r> CM CM NB121,122,123(PNP) 100mA general purpose transistors CM features rCÛ z V» z CL z (TI package and lead coding

capacitor discharge ignition

Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
Contextual Info: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding

NB111

Abstract: 500n50 2N1104 NB311E LOW-POWER SILICON NPN nb111ej BC152
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 fT Hz 35 35 35 35 35 35 35 35 35 35 30 30 30 30 30 30 30 30 35 40 180M 60M 150M 150M 20M 20M 20M 20M 300M 20M 35 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 50 50 100M 2N337A

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

audio power amplifier 500 watt

Abstract: 3a npn to126 transistor
Contextual Info: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h- NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C 35561 D ISCRETE T'2?'// National Semiconductor - r < z a. z < Z NA71 (NPN) NA7 2 (PNP) ^ AmP com plem entary pow er tra n sisto rs IT! packages and lead coding

NB111E

Abstract: NB011 NA21E nb111 NA21 NA21 npn L0121 NA22 NR001E NB111EH
Contextual Info: NATL SENICOND {DISCRETE} 650 1130 NÂTL SEMICOND, "äfl DlfJ bSDllHD [][|3S5bl S DISCRETE 28C 35561 T z D CL z fjgA National Q. CM CM < z NA21 (NPN) N A 22(PN P) z 1 .5 A m p c o m p le m e n ta ry p o w e r t r a n s is t o r s [T~| p a c k a g e and lead coding

ssb550

Abstract: SC1815 SSB050 cs9013 CS9014 CS9015 CS9012 NA31 ED1502 sa1015
Contextual Info: 0037177 O uT z io © z S' •8 z o o o o T" eg in o T" in T“ o o o CO in un CO U) o <o CO N. T” o CO o o T“ o T" o CNJ T" r“ r“ - CO d CO o in m z B s s? T“ 05 R O O) s z © z o T" o r*. CO -T-3l~Ol 0 g 2 O s © 2 1 1 5 D JjaS O H B D f*r—