D03SS Search Results

BSR56

Contextual Info: • bbS3T31 D03SS33 311 H A P X N AMER PHILIPS/DISCRETE BSR56 BSR57 BSR58 b7E D y v N-CHANNEL FETS Symmetrical silicon n-channel depletion type ju nctio n field-effect transistors in a plastic m icrom iniature envelope intended fo r application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.

NB111

Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
Contextual Info: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding

qml-38535

Abstract: GDFP1-F48
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A 18 19 REV SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD M ICROCIRCUIT DRAW ING THIS DRAWING IS AVAILABLE

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

Contextual Info: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC

Contextual Info: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-BIT MICROCOMPUTER DESCRIPTION • D-A c o n v e rte -bit X 1 channels The 3819 group is a 8 -bit m icrocom puter based on the 740 fam ily • Z e r o cross detection in p u t. 1 channel

40khz ultrasonic transmitter

Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k
Contextual Info: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~| package and lead coding features • 20 Volt/800 mA Amp rating

40khz ultrasonic transmitter

Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY
Contextual Info: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §

NA72

Abstract: NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220
Contextual Info: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h - NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C D ISCRETE 35561 National Semiconductor T ' 2 ? - r < z a. z < Z NA 71 (NPN) NA 7 2 (PNP) ^ AmP com plem entary power tra n sisto rs IT ! packages and lead coding

NB111

Abstract: npn general purpose amplifier E28C nb121
Contextual Info: ~ 2ä NATL SEHICOND {DISCRETE} 650 1130 a. Z a CO CM NATL S E M IC O N D , D E |b s a ii3 Q a a B ssT a 28C 35593 D IS C R E T E National Semiconductor T- r> CM CM NB121,122,123(PNP) 100mA general purpose transistors CM features rCÛ z V» z CL z (TI package and lead coding

m7 smd diodes

Abstract: TCA605G SIEMENS thyristor transistor smd cr smd transistor m7 2.tn SMD siemens EM 235
Contextual Info: 47E D SIEMENS • B235b05 QDB55b3 £ S IS IE6 SIEMENS AKTIEN6 ESE LLSCHAF 7 = ' i 5 ‘' 0 1C for Inductive Two-Wire Proximity Switches with Short-Circuit Protection TCA 605 Bipolar IC Preliminary Data • • • • • • 5 Operates from 1 V supply voltage upwards

capacitor discharge ignition

Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
Contextual Info: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding

zilog 1866

Abstract: XTAL NTK Z86E04 in 18 pins NTK oscillator 10 MHz 4 pins Z86CCP00ZEM Z86E04 Z86E08 ntk 8mhz 4 pin oscillator ntk 2MHz
Contextual Info: PRELIMINARY C ustom er P rcxjjrem en iSpecification < $ 2 iL C E Z 8 6 E 0 4 /E 0 8 S L 1 866 CMOS Z8 O T P M icro co n tro i a e r FEATURES Part Number ROM Kbytes RAM* (Bytes) Speed (MHz) Z86E08 Z86E04 2 1 125 125 12 8 * General-Purpose • ■ Program Options:

KM48V2104B

Contextual Info: KM48V2004BS CMOS DRAM ELECTR O NICS 2 M x 8 Bit C M O S Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

audio power amplifier 500 watt

Abstract: 3a npn to126 transistor
Contextual Info: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h- NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C 35561 D ISCRETE T'2?'// National Semiconductor - r < z a. z < Z NA71 (NPN) NA7 2 (PNP) ^ AmP com plem entary pow er tra n sisto rs IT! packages and lead coding

Contextual Info: KM48C2000BS CMOS D R A M ELECTRONICS 2M x 8 Bit C M O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily o1 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

SOT-90B

Contextual Info: Product specification Philips Sem iconductors OF4114 Optocoupler FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with TTL integrated circuits • Fast switching • High degree of AC and DC insulation 3120 V (RMS and

2N2222 transistor

Abstract: k thermocouple amplification circuit diagram ZB50 220V to 12V transformer trim pot 200k Amplifier type K thermocouple k type themocouple 1000VA 2B50 2B50A
Contextual Info: ANALOG DEVICES INC SIE ]> MÊ OfllbflOO 0 0 3 S S Ü 3 S âl • ANA A N A LO G Isolated, Thelinocoupïe D E V IC E S _ Signal Conditioner □ FEATU RES Accepts J , K , T , E , R , S or B Thermocouple Types Internally Provided Cold Junction Compensation

bc2378

Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
Contextual Info: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi