TSD113D Search Results

MTP20N10

Abstract: 1RF531
Contextual Info: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA

BC338 hie hre hfe

Abstract: BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055
Contextual Info: National Bipolar Pro Electron Series Semiconductor c/> Case Style VCEO VeBO V (V) Min Min Ices ’ •cBOg. (nA) Max 50* TO-92 (97) 60* BC327-10 TO-92 (97) 50* 45 5 100* 45 40 63 BC327-16 TO-92 (97) 50* 45 5 100* 45 40 100 TO-92 (97) 50* TO-92 (97) 30' TO-92

NDS9933

Abstract: Transistor c 4138 LA 4138
Contextual Info: National w j f May 1996 Semiconductor” NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor G en eral D e sc rip tio n F eatu res These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DM0S technology.

d45hb

Abstract: 2N6124 mje230 D4SH11 f tip42c NJ 20 U1 W
Contextual Info: NATL SENICOND {DISCRETE} äfi d o 0.1 s o in o in s o in o in Gì < < so 0.5 2 in o in in in CO co co co 5 15 < < •=■ 3 7 S 5 15 < < 5 15 p < 0.5 o< co D (0 <o (0 2 r-' t-* 2 co co o e X 1.5 0.5 0.15 0.15 3 1.5 0.5 o in CM* 3 1.5 0.5 1.5 0.5 0.15 P 1.5

Contextual Info: NATL This N-Channel Power MOSFETs Continued 2N6755 IRF130 IRF131 IRF132 By IRF133 Its IRF530 (71 IRF532 2N6757 2N6758 IRF230 IRF231 TC = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-220 (37) TO-220 (37)

NPD8301

Abstract: J406 dual NPD8303 J406 2N3934 2N5561 2N3954-6 2N5045 2N5454 2N3935
Contextual Info: 1 This JFET Transistors NATL Material National áuá Semiconductor N-Channel JFETs Typ« No. Case Style VGS1-2 D rift G„ Gfs C|ss C ru BV R G ou CMRfl Vg» Vp Igss loss Gis GosCI-2 Iq H G 2 Process Pkg. Goss Idss •g Vos O iV /T PA) jim hos Oimho) (dB)

IRF520CF

Contextual Info: IRF520CF By IRF620CF Its IRF720CF IRF820CF IRF630CF IRF730CF 1RFP140CF IRFP141CF IRF540CF Con PF Min Max Cm (PF) Min Max 15 600 400 100 B2 2.5 15 600 300 80 B3 1.44 1.5 15 500 10Q 40 64 0.25 2.4 1 15 400 100 40 Bfe 4 0.25 0.144 8 30 800 500 150 C1 2 4 0.25

1RFP140

Abstract: 1RFP140CF IRF540CF IRF520CF IRF830CF IRF630CF
Contextual Info: Typo NO. IRF620CF IRF720CF IRF820CF IRF630CF 9-22 IRF730CF IRF830CF 1RFP140CF IRFP141CF IRF540CF lD@ V TC= 2 5 X V o ss Min (A) • rD@ Tc = 1 0 0 T (A) VGS(th) (V) Min Id @ (mA) Max RoS(on) <«>@ Max <D (nC) Qfl Cl«, (A) Max Min <PF) M ax Co m Min (PF)