NA51W
Abstract: NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322
Contextual Info: NB311,312,313 NPN , NB321,3 2 2 ,323(PNP) NATL SEUICOND {DISCRETE} 6501130 NATL ifl EMICOND, (DISCRETE) 28C National Semiconductor r - 35601 n - 2 , } 3 ^ 0 - 7 NB311, 312, 313 (NPN) * , NB321, 3 2 2,3 N P ) 1,5ArnP com plem entary pow er drivers 2 ,3 23(P
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bsd113dnb311nb321andto-202+12b5d113dnb313ynb022eynr001enb113eyna51wna52wna52w pnp35604nb312nb313nb322
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NB111
Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
Contextual Info: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding
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bs0113gnb121100ma400mv+10to-92fcj501130nb021evnb211yynr001enb111nb211elb 122 npnu6501nb212e
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40khz ultrasonic transmitter
Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k
Contextual Info: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~| package and lead coding features • 20 Volt/800 mA Amp rating
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sd113gvolt/800nb111eh/jna01eg/j+8nr001e380mw40khz ultrasonic transmitter40khz ultrasonicna01nb111ehnb021eytoko k
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40khz ultrasonic transmitter
Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY
Contextual Info: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §
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sd113g800mavolt/800nb111eh/j+12na01eg/jnr001e380mw40khz ultrasonic transmitter40khz ultrasonicnb111nb111ehultrasonic" "transmitter40khz ultrasonic transmitter 12vk 3555na01exnb021ey
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NA51 transistor
Abstract: na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51
Contextual Info: NATL SEMICOND {DISCRETE} 6501130 NATL CL Z CL CÎ ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 in < z r\ Z Q. 10 < NA51 (NPN) 3.5Am p complementary pow er transistors NA52(PNP) features PH packages and lead coding
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ts0113qo-126o-220t0-220+1535s7bnb021eynb122eynb112eynb312ena51 transistorna52 transistorbv 726 c 1 converterna52w pnpna52wbv 726 c converterna51 npnbv 726 cna52power transistor na51
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NA42 transistor
Abstract: NA42U NA41 16AL 35570 NA42 pnp 557
Contextual Info: äfl NA41 NPN , NA42(PNP) SENICOND {DISCRETE} D E ^ b S D 1 1 3 D Doassti N A T L S E M I C O N D , (D I S C R E T E ) 3 28C National Semiconductor NA41(NPN) NA42(PNP) 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features
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o-126o-220ts0113dt-32-p+11nb021eynb211yynr001ena41una42 transistorna42una4116al35570na42pnp 557
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NB111
Abstract: npn general purpose amplifier E28C nb121
Contextual Info: ~ 2ä NATL SEHICOND {DISCRETE} 650 1130 a. Z a CO CM NATL S E M IC O N D , D E |b s a ii3 Q a a B ssT a 28C 35593 D IS C R E T E National Semiconductor T- r> CM CM NB121,122,123(PNP) 100mA general purpose transistors CM features rCÛ z V» z CL z (TI package and lead coding
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nb121100ma400mvts0113q+8nb021eynb211yynr001ena41una42unb111npn general purpose amplifiere28c
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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NA51 transistor
Abstract: NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn
Contextual Info: NATL SEMICOND {DISCRETE} 6501130 CL Z CL NATL ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 C Î in < z r\ Z Q. 10 < NA51 (NPN) NA52(PNP) 3 .5 A m p com plem entary p o w e r tra n s is to rs features [T I packages and lead coding
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tsd113do-126t0-220q03ss7b+1510iif33-ifnb021eynb122eynr001ena51 transistorna51wpower transistor na51na52 transistorna52wna52w pnpna51na52una52na51 npn
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transistor pnp a111
Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E
Contextual Info: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features
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bsd113do-126o-220hsd113d+10nb021eynb211yynr001ena41utransistor pnp a111to-126 on150 watt hf transistor 12 voltpjo 390 cmna42na42u
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2SA987
Abstract: 2N1026A LOW-POWER SILICON PNP
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 NB321F NB321X NB321Y 2N2105 2N2105 2N2105 2N1026A 2N1469 2N940 V410A 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 NB221EH NB221FH NB221XH NB221YH NB021ET NB021FT NB023ET NB023FT 2SA987 NB021FI
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nb321fnb321xnb321y2n2105+62n1026a2n14692n940v410a2sa987low-power silicon pnp
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