TO-22OAB
Contextual Info: NATL SEMI CONO DISC RET E HE D | bSD1130 003710^ 7 Proc. Famllj * CC tX IB "O e £ o H 3 P 1a? ffl 5 2 Z Z z z OC O ÛC DC w* P CM 3 S 2 £ ¿2 z z z z z w f z ST eg z P “ CO P “ CO P CO* ^ « a> <5 S S JB a> © z z z z z z z z U f». ¡2 ir —
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bsd1130to-22oab |
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lg crt tv
Abstract: NB212 NB211 NB222 NB112EY NB111 NB022 NB022EY
Contextual Info: bSD1130 003 SST7 'NATL SEMICOND {DISCRETE} 6501130 NATL SEMICOND, Z CL CO CM CM 28C 3 5 5 9 7 D I S CR ET E D T-ll-Z 3 E JI National m m Semiconductor as CM CM CM NB221 222 2 2 3 ÎP N P ) 500m A medium current driver transistors features CM CM CÛ z Q.
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bsd1130003sst7nb221500ma+13rec-50sd113dnb022eynb123eynb113eynb111eylg crt tvnb212nb211nb222nb112eynb111nb022
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capacitor discharge ignition
Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
Contextual Info: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding
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003ss77o-126o-220io11f+13nb022eynb123eynr001enb113eynb111eynb121eycapacitor discharge ignitionnb313yna61wna62ignition transformernb111nb32
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NR421
Contextual Info: SAC D I bSD1130 ODBSbGi 4 NATL SEPIICON] {DISCRETE} 6 5 0 1 1 3 0 N A TL S E M I C O N D , Z 28C D I S C R E T E ) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features 1 | package and lead coding ■ 0.65pF typical feedback capacitance for excellent
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bsd1130nr421150mv10tyw/m+4280//v/m10khz15khz800khz
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transistor MPSA13 NATIONAL
Abstract: MPSA13 MMBTA13 MPSW13
Contextual Info: NATL SEMICOND DISCRETE 11E D bSD1130 □ □ 3 7 2 b e] S | l~~27~Zc{ National Semiconductor U > mJ. 03 -o O —X u MPSA13 MPSW13 MMBTA13 3 I co TL/G /10100-5 NPN Darlington Transistor Electrical Characteristics t a = 25°C unless otherwise noted Parameter
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b5d1130t-27-29mpsa13mpsw13+6mmbta13tug/10100-1226aetl/g/10100-5tl/g/10100-4transistor mpsa13 national
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MMBTA56
Abstract: MPSW56
Contextual Info: NATL SEMICOND DISCRETE H E D I bSD1130 DD37S71 3 I •o A > cn o> National Semiconductor T ' 2e?-^1 ■o to € CJ1 o> MPSA56 MPSW56 MMBTA56 § a> T U G /10100-S PNP General Purpose Amplifier Electrical Characteristics T a = 25°C unless otherwise noted M in
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mpsw56bsd11300d37s71mmbta56+4226aetug/10100-stl/g/10100-1tuq/10100-4
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transistor pnp a111
Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E
Contextual Info: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features
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bsd113do-126o-220hsd113d+10nb021eynb211yynr001ena41utransistor pnp a111to-126 on150 watt hf transistor 12 voltpjo 390 cmna42na42u
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TOKO A 50 GTE
Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
Contextual Info: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■
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nr421150mv800khz100f/v/m+7280juv/m10khz-28db15khztoko a 50 gte88-108 rf amplifierto82 transistor
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MMBT4121
Abstract: MMBT2904 MMBT3905 TO236 pn4122
Contextual Info: NATL SEMICOND DISCRETE 5SE ]> • bSD1130 0037777 2 ■ ~T~~2~7~0J PNP General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo(V) Min Min Min Max (mA/V) BCF29 BCF30 BCW61A 32 32 32 32 32 32 120 215 120 260 500 220 2/5.0 2/5.0 2/5.0 2N1132A
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bsd1130bcf29bcf30bcw61a+112n1132a2n29042n29052n29062n29072n3905mmbt4121mmbt2904mmbt3905to236pn4122
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MMBT2904
Abstract: MMBT2904A MMBT3905 MMBT4916 MMBT3638A MMBT3702 MMBT3703 MMBT4402 MMBT4403 MMBT5143
Contextual Info: This s S S S ä d U C t o Surface Mount Transistors r General Purpose Amplifiers and Switches—PNP VCBO* VcEO VEB0 V (V) (V) Min Min Min By 40 5 MMBT2904A TO-236 (49) 60 40 5 MMBT2905 TO-236 (49) 60 40 5 MMBT2905A TO-236 (49) 60 40 5 MMBT2906 TO-236 (49)
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t-29-oi03714st-37-01t-29-01+10mmbt2904mmbt2904ammbt3905mmbt4916mmbt3638ammbt3702mmbt3703mmbt4402mmbt4403mmbt5143
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FDLL456
Abstract: FDLL456A FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A 456 diode
Contextual Info: . Discrete POWER & Signal Technologies Semiconductor* 1N/FDLL 456/A - 1N/FDLL 459/A CO LOR B A N D M A R K IN G DEVICE LL-34 DO-35 1ST BAND 2ND B A N D FD LL4 5 6 F D L L4 5 6 A FD LL4 5 7 F D L L4 5 7 A FD LL4 5 8 F D L L4 5 8 A F D LL4 5 9 F D L L4 5 9 A
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456/a459/ado-35ll-34+8fdll456fdll456afdll457afdll458fdll458afdll459fdll459a456 diode
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NDP506A
Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
Contextual Info: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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ndp506andp506bndb506andb506b+4125-cbsd113d0d4d21dzener diode 4b3
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Tf 227
Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector
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pn2369ammbt2369ammpq2369ot-23+4soic-16bs011300040bctf 227
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diode 6t6
Abstract: NDC632P
Contextual Info: National June 1996 Semiconductor" NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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ndc632psupe202diode 6t6 |
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MPSA06
Contextual Info: MPSA06 / MMBTA061 PZTA06 Discrete POWER & Sign al Technologies National Semiconductor “ PZTA06 MMBTA06 MPSA06 SOT-23 SOT-223 Mark: 16 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
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mpsa06mmbta06pzta06ot-23+2ot-223bsd1130
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NDT410EL
Contextual Info: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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ndt410elot-223004006b |
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DIODE 3L2
Abstract: Complementary MOSFET Half Bridge
Contextual Info: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to
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nps8852hb5d113qdiode 3l2complementary mosfet half bridge |
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NDP506BL
Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL
Contextual Info: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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ndp506alndp506blndb506alndb506bl+5s011300gm0215bsd1130zener diode dwndp506a
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MMBTA56
Abstract: MPSA56 PZTA56
Contextual Info: MPSA56 1MMBTA561PZTA56 & D iscrete POW ER & S ig n a l Technologies National Semiconductor" MPSA56 PZTA56 MMBTA56 ♦ S O T -2 2 3 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
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pzta56ot-223d0m0774mmbta56+1mpsa56
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NDB7060
Abstract: NDP7060
Contextual Info: Na t io n a l Semiconductor" June 1996 NDP7060/ NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p o w e r field effect tran sisto rs are produced using National's pro p rie ta ry, high cell density, DMOS technology.
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ndp7060/ndb7060bsd1130bsd113d+1ndp7060
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NDB4060L
Abstract: NDP4060L
Contextual Info: & Na t i o n a I Semiconductor” A p ril 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode • 15A, 60V. RDS 0NI = O .m @ VGS = 5V power field effect transistors are produced using
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ndp4060l/ndb4060lb5g113000md2mm+1ndp4060l
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L50Q
Abstract: BCW65C
Contextual Info: S e m i c o n d u c t o r “ BCW65C D iscrete P O W ER & S ig n a l Technologies National BCW65C M a rk : E D NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.
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bcw65cls01130004d673l50q |
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3.5b zener diode
Abstract: diode so3 NDB6050L NDP6050L
Contextual Info: National April 1996 S e m i c o n d u c t o r " N D P 6050L/ NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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ndp6050l/ndb6050lne8-5900402be+5bsd1130d0m02b33.5b zener diodediode so3ndp6050l
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N7000
Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
Contextual Info: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been
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2n7000/2n7002/ndf7000a/nds7002a81-043-299-240bbsd1130n7000+92n7000 mosfetcj ndf7000asfs sot23mosfet 2n70002n70002n7002ndf7000ands7002a7002 transistor sm
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