NDP506A
Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
Contextual Info: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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ndp506andp506bndb506andb506b+4125-cbsd113d0d4d21dzener diode 4b3
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NDP505A
Abstract: B23 j ZENER DIODE NDP506A zener Diode B23
Contextual Info: rvtrih ^r 1QQ1 Semiconductor NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high
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ndp505a/ndp505bndp506a/ndp506bb1-043-299-2408hsg113d+5d3lifci33ndp505ab23 j zener diodendp506azener diode b23
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NDP506BL
Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL
Contextual Info: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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ndp506alndp506blndb506alndb506bl+5s011300gm0215bsd1130zener diode dwndp506a
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NDP406BL
Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL
Contextual Info: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5
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o-220abndp710aelndp710alndp710bel+15ndp710blndp610aelndp610alndp610belndp610blndp510aelndp406blndp508aelmtp3055elndp706alndp606alndp405blndp605alndp405alndp510al
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B23 zener diode
Abstract: zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B
Contextual Info: National Semiconductor Ontnhfir 1QQ1 NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high
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ndp505a/ndp505bndp506a/ndp506bhsg113db23 zener diode+8zener diode b23ndp505andp506atransmitter and receiver mini camerahrd-b30m115b23 j zener diodendp505bndp506b
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b527
Abstract: tic 263a NDP506A
Contextual Info: National Semiconductor” M a y 19 95 NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 26 and 24A, 60V. RDS 0N| = 0.05 and 0.06J2. effect transistors are produced using National's
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ndp506andp506bndb506andb506b+3bsd113db527tic 263a
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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NDP505A
Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
Contextual Info: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80
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o-220abndp710andp710aendp710b+12ndp710bendp610andp610aendp610bndp610bendp510andp505andp705aendp605andp405bndp510aendp510b
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NDP406BL
Abstract: DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610BL P610B DP505
Contextual Info: «NSCS Power MOSFETS continued N Channel r D S (o n | I q/^ G S (Volts) Min Device 100 NDP710AEL •n Pn r D S ( « l ) ® * d/ V B S (Amps) (Watts) (m ii) (Amps/Volts) Max Max Max 38 21/5 42 42 21/5 40 Min 150 NDP706AEL N DP710AL NDP710BEL Device (m a )
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o-220abndp710aeldp710alndp710bel+15ndp710blndp610aeldp610alndp610belp610blndp510aelndp406bldp408dp706ndp706alndp405aldp608ndp606alp610bdp505
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