NDP710A Search Results

NDP406BL

Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL
Contextual Info: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5

NDP505A

Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
Contextual Info: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80

GS 069 pwm

Abstract: gs 069 710b NDB710A NDB710AE NDB710B NDB710BE NDP710A NDP710AE NDP710B
Contextual Info: N May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's

NDP710BE

Abstract: NDB710A NDB710AE NDB710B NDB710BE NDP710A NDP710AE NDP710B GS 069 pwm diode OA 71
Contextual Info: May 1994 N NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A/ NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-ehannel enhancem ent mode power field effect transistors are produced using National's

GS 069 pwm

Abstract: 710b NDB710A NDB710AE NDB710B NDB710BE NDP710A NDP710AE NDP710B NDP710BE
Contextual Info: May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's

NDP406BL

Abstract: DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610BL P610B DP505
Contextual Info: «NSCS Power MOSFETS continued N Channel r D S (o n | I q/^ G S (Volts) Min Device 100 NDP710AEL •n Pn r D S ( « l ) ® * d/ V B S (Amps) (Watts) (m ii) (Amps/Volts) Max Max Max 38 21/5 42 42 21/5 40 Min 150 NDP706AEL N DP710AL NDP710BEL Device (m a )

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

ndb710a

Contextual Info: May 1994 PAIRCHII-D M ICDNDUCTQ R i NDP71OA / NDP71OAE / NDP71 OB / NDP71OBE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's

Contextual Info: M ay 1994 N NDP71OA / NDP71OAE / NDP71 OB / NDP71OBE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2