NSDU57
Abstract: 0410 NSDU51 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 2N4314
Contextual Info: NATL SEMICOND {DISCRETE} 6 5 0 1130 NATL BÛ SEMICOND, D E | b S 0 1 1 3 0 DOBSHSM 1 | 28C D I S C R E TE? T ~ Test Conditions l l " CL N <£> r» <0 CO CO ' r<0 r* «5 CO co r ID Ed P<0 r- r>. <0 tf> r-» ID 35454 z y (O D " 0 - 0 / o r- z " 0 s' 3 0
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2n40302n40312n40322n4033+6nsdu570410nsdu512n40362n40372n4314
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Tf 227
Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector
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pn2369ammbt2369ammpq2369ot-23+4soic-16bs011300040bctf 227
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4-221
Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
Contextual Info: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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nds9958b5011300q400bl4-221+2transistor mosfet n-ch drain currentdual n & p-channel mosfet
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BAV19
Abstract: BAV20 BAV21 FDH400
Contextual Info: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies National Semiconductor' BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Proce ss 1J. N S C alternate for B A V 1 9 & BAV20: FDH400. Absolute Maximum Ratings* Symbol W lv TA = 25°C unless otherwise noted
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bav19do-35bav20fdh400+3bav21bsd1130b5g1130
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NDS9945
Abstract: 2501lA
Contextual Info: National May 1996 Semiconductor" NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er fie ld effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.
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nds9945bsd113gb5g1130004dgd+12501la
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NDS9942
Abstract: p channel mosfet
Contextual Info: National e * M a y 19 96 Semiconductor" NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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nds9942sd1130p channel mosfet |
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LC 500-S
Abstract: 2N5551 MMBT5551 S4002
Contextual Info: 2N5551 I MMBT5551 & D iscrete P O W ER & S ig n a l T echnologies _ National S e m i c o n d u c t o r ” MMBT5551 2N5551 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for g en e ral pu rp ose high voltage am plifiers an d g a s d isc h a rg e d isp la y driving. S o u rc e d from P ro c e s s 16.
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b5g1130lc 500-s2n5551mmbt5551+1s4002
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TRANSISTOR 2SC 950
Abstract: NDT454P c25f
Contextual Info: ß National Semiconductor" June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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ndt454phig13ot-223vos--10v+4bs0113dd0401setransistor 2sc 950c25f
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NDS8928
Abstract: ab-5 national
Contextual Info: National Semiconductor July 1996 ” NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS
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nds8928b5d113dbsd113dab-5 national |
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