MMBT5551 Search Results

sot-23 Marking M1F

Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l
Contextual Info: MMBT5550L, MMBT5551L, MMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements

MMBT5551L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G „ ORDERING INFORMATION Normal MMBT5551-x-AE3-R

marking code g1

Abstract: G1 TRANSISTOR SOT 23 PNP
Contextual Info: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3A (4 to< 8 kV) MECHANICAL DATA • Case: SOT-23 Plastic

Contextual Info: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data

MMBT5551A

Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION

marking G1 sot23 UTC

Contextual Info: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage

2N5551B

Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBT5551R

Abstract: sot23 HF mmbt5551 st
Contextual Info: MMBT5551 NPN HIGH VOLTAGE TRANSISTOR POWER 160 Volts 250 mWatts FEATURES 0.006 0.15 MIN. VOLTAGE 0.120(3.04) 0.110(2.80) • NPN Silicon, planar design • Collector-emitter voltage V CE = 160V • Collector current I C = 300mA • Lead free in comply with EU RoHS 2002/95/EC directives.

1N914

Abstract: MMBT5551 MMBT5551G1
Contextual Info: Zowie Technology Corporation High Voltage Transistor NPN Silicon COLLECTOR 3 3 MMBT5551 BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc Emitter-Base Voltage VEBO 6.0 Vdc

marking G1 sot-23

Abstract: MMBT5401 MMBT5551 MARKING G1
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1

Contextual Info: MCC TM Micro Commercial Components MMBT5551
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • NPN Plastic Encapsulate Transistor Halogen free available upon request by adding suffix "-HF"

Contextual Info: MMBT5550L, MMBT5551L, MMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements

Contextual Info: High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc 3

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage

Contextual Info: MMBT5551 160V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • BVCEO > 160V Ideal for Low Power Amplification and Switching Complementary PNP Type Available MMBT5401 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

marking G1 sot-23

Abstract: marking g1
Contextual Info: MCC TM Micro Commercial Components MMBT5551
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • NPN Plastic Encapsulate Transistor Collector Current: ICM=0.6A Collector-Base Voltage: V BR CBO=180V

MMBT5551LT1

Contextual Info: MMBT5551LT1 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage

Contextual Info: Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH MMBT5551GH 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS

2SC9830

Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)

Contextual Info: MMBT5551 SPICE MODEL: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A · · · · · · Min Max A

k4m sot 23

Abstract: MMBT5401 K4m transistor
Contextual Info: SPICE MODEL: MMBT5401 MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT5551 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

FMBM5551

Abstract: MMBT5551
Contextual Info: FMBM5551 NPN General Purpose Amplifier • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings * Value Units VCEO Symbol

Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160