BSD113G Search Results

l5 transistor PNP

Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
Contextual Info: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

MMBTH10

Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
Contextual Info: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter

NDP505A

Abstract: B23 j ZENER DIODE NDP506A zener Diode B23
Contextual Info: rvtrih ^r 1QQ1 Semiconductor NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high

DG 402 rp

Contextual Info: NPDS402 I NPDS403 I NPDS4041 NPDS406 Discrete POWER & Signal Technologies National Semiconductor" t ß NPDS402 NPDS403 NPDS404 NPDS406 D2 s2 — NC ^ S O -8 % NC D1 S1 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings*

NDT014L

Abstract: MOC3
Contextual Info: & June 1996 N ational Semiconductor PRELIMINARY " NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

bu 517

Abstract: NDS352P
Contextual Info: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

TN3725A

Abstract: LB 122 NPN TRANSISTOR TN3725 MMPQ3725 SOIC-16 LB 122 transistor LB 122 NPN transistor A4t 35
Contextual Info: D is c r e t e P O W E R & S i g n a l ^ . T e c h n o lo g ie s TN3725A MMPQ3725 TN3725AI MMPQ3725 & XT . , N a t i o n a l _ , S e m i c o n d u c t o r ,M S O IC -1 6 NPN Switching Transistor Th is d e v ic e is d e sig n e d fo r high sp eed co re d rive r a pp licatio n s

Contextual Info: BAS16 Discrete POWER & Signal Technologies & National Semiconductor" BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol t a =25 c um^s otherwise noted Parameter Value Units Wiv Working Inverse Voltage

transistor c 4137

Abstract: NDS9925A
Contextual Info: National Semiconductor~ June 1996 ADVANCE INFORMATION NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDS9945

Abstract: 2501lA
Contextual Info: National May 1996 Semiconductor" NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er fie ld effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.

ze 003 ic

Abstract: NDS9959 ze 003 4232 CM C135T
Contextual Info: Nationa I Semiconductor M ay 1996 “ NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

dual P-CHANNEL 30V DS MOSFET

Abstract: NDS8958 Dual N & P-Channel MOSFET
Contextual Info: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

250M

Abstract: NDB4050 NDP4050
Contextual Info: 1 N ational Semiconductor- Jul y1996 NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel enhancem ent m ode pow er fie ld effect transistors are produced using N ational's proprietary, high cell density, DMOS technology. This

B23 zener diode

Abstract: zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B
Contextual Info: National Semiconductor Ontnhfir 1QQ1 NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high

NDS9943

Abstract: 56 pF CH N-8C
Contextual Info: N a t ion a I Semiconductor" M ay 1996 NDS9943 Dual N & P-Channei Enhancement Mode Field Effect Transistor General Description Features These du a l N- and P-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using N a tio n a l's p ro p rie ta ry, high cell density, DMOS

Contextual Info: BSS64 Discrete POWER & Signal Technologies National m y y S e m i c o n d u c t o r “ BSS64 Mark: U3 NPN General Pupose Amplifier This device is designed far general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.

ndc7002n

Contextual Info: National March 1996 Semiconductor” & NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

BSS123

Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
Contextual Info: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

j107

Abstract: Capacitance j107 J105 j106
Contextual Info: Semiconductor“ J105 J106 J107 NDSJ105 SOT-23 s N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* Symbol TA = 25CC unless otherwise noted

Ultrasonic amplifier

Contextual Info: NATL SEniCOND {DISCRETE! 6 5 0 1 130 N A T L SEMICOND, ~ 2Û DE | b 5 Q 1 1 3 D DOaSSÙ1! DISCRETE 28C 35589 Q. ^ N a tio n a l r Æj Semiconductor - ' Z f ' Z . / CM o CO CM s ¡ u o n f i f m / D w o ! 3 0 m A low noise transistors N B 0 2 3 .0 2 4 (PNP)