80nf100
Abstract: 80 nf 100
Contextual Info: PN101/MMBT101 NATL SEMICOND DISCRETE HE D g bS0113D T - 27-/3. National Ju t Semiconductor PN101 II U c [] E0 00H7S1 D 5 | MMBT101 TO -236 S O T - 23 TO-9 2 TL/Q/10100-5 TL/G/10100-1 NPN General Purpose Amplifier Electrical Characteristics ta = 2s°c unless otherwise noted
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pn101/mmbt101bs0113d00h7s1pn101+7mmbt101tl/q/10100-5tl/g/10100-110fia100/ia80nf10080 nf 100
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NPDS402
Abstract: NPDS403 NPDS404 NPDS406
Contextual Info: NPDS402 / NPDS403 1 NPDS404 / NPDS406 Discrete POWER & S ignal Technologies National Semiconductor" NPDS402 NPDS403 NPDS404 NPDS406 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings* TA = 25"C unless otherwise noted
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npds402npds403npds404npds406+2vos-10vbs01130
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NZT6714
Abstract: TN6714A
Contextual Info: TN6714AI NZT6714 tu D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r ' " TN6714A NZT6714 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A.
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nzt6714ot-223bs0113do-226+2b501130tn6714a
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027Q
Abstract: NDS336P
Contextual Info: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS
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nds336p--125-clsd1130027q |
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NDS8936
Contextual Info: National Semiconductor July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These IM-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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nds8936 |
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NB111
Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
Contextual Info: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding
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bs0113gnb121100ma400mv+10to-92fcj501130nb021evnb211yynr001enb111nb211elb 122 npnu6501nb212e
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B5G1
Abstract: NDC652P Supersot 6
Contextual Info: M arch 1996 National f i Semiconductor" NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • -2.4A, -30V. RDSI0Nl = 0.18 fi @ VGS = -4.5V -10V. >V„ These P-Channel logic level enhancement mode power field effect transistors are produced using
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ndc652pls01130b5g1supersot 6 |
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NDT2955
Abstract: ACAA TRANSISTOR
Contextual Info: June 1996 Nat ionaI Sem iconductor" NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS te chnology. This
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ndt2955125-csd113g0d4014d+1acaa transistor
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NDP506A
Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
Contextual Info: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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ndp506andp506bndb506andb506b+4125-cbsd113d0d4d21dzener diode 4b3
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BAV99
Abstract: BAW56 sot23 baw56 t22 sot23
Contextual Info: S e m ic o n d u c t o r BAW56 tß Discrete POW ER & Signal Technologies National BAW56 CONNECTION DIAGRAMS JH A1 HI SOT-23 ET High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 2 5'C unless otherwise noted
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ot-23baw56bav99bs0113d+30040s5ssot23 baw56t22 sot23
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FDS01201
Abstract: FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703
Contextual Info: £ 3 National Semiconductor Surface Mount Diodes S> m 3: n O O General Purpose & Specialty Diodes PLASTIC PACKAGE Description Pkg. No. Pin Out By (V Min - I I Device Vr V Vp (V> Max 1000 75 0.715 1.0 0.855 10.0 1.1 50.0 1.3 100.0 1.0 100 See BAS 16 See BAS 16
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fds01000o-236bav70bav74+12bav99baw56fds01201fds04148fds01203fsd01200fds01503fds015011n459 equivalentfds012021n627fds01703
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DG 402 rp
Contextual Info: NPDS402 I NPDS403 I NPDS4041 NPDS406 Discrete POWER & Signal Technologies National Semiconductor" t ß NPDS402 NPDS403 NPDS404 NPDS406 D2 s2 — NC ^ S O -8 % NC D1 S1 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings*
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npds402npds403npds404npds406+3bs0113dq040cj5bdg 402 rp
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MPSA06
Contextual Info: MPSA06 / MMBTA061 PZTA06 Discrete POWER & Sign al Technologies National Semiconductor “ PZTA06 MMBTA06 MPSA06 SOT-23 SOT-223 Mark: 16 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
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mpsa06mmbta06pzta06ot-23+2ot-223bsd1130
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40khz ultrasonic transmitter
Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k
Contextual Info: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~| package and lead coding features • 20 Volt/800 mA Amp rating
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sd113gvolt/800nb111eh/jna01eg/j+8nr001e380mw40khz ultrasonic transmitter40khz ultrasonicna01nb111ehnb021eytoko k
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40khz ultrasonic transmitter
Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY
Contextual Info: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §
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sd113g800mavolt/800nb111eh/j+12na01eg/jnr001e380mw40khz ultrasonic transmitter40khz ultrasonicnb111nb111ehultrasonic" "transmitter40khz ultrasonic transmitter 12vk 3555na01exnb021ey
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A1567
Abstract: NDB7060L NDP7060L transistor b35 A-1567
Contextual Info: Na t i o n a I Semiconductor'“ June 1996 NDP7060L/ NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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ndp7060l/ndb7060lbs0113da1567ndb7060l+3ndp7060ltransistor b35a-1567
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NDT014L
Abstract: MOC3
Contextual Info: & June 1996 N ational Semiconductor PRELIMINARY " NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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ndt014ll5d1130moc3 |
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m073
Abstract: NZT6728 TN6728A b41 sot223
Contextual Info: TN6728A I NZT6728 & Discrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6728 TN6728A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.
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tn6728ao-226nzt6728ot-223+6bs0113d4d73flb501130m073cim073b41 sot223
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bu 517
Abstract: NDS352P
Contextual Info: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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nds352pb50113d003t74gbsd113d+2317h2bu 517
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NDS8839H
Abstract: Complementary MOSFET Half Bridge
Contextual Info: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
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nds8839hbs0113dcomplementary mosfet half bridge |
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NDH8302P
Contextual Info: f i National Semiconductor" June 1996 ADVANCE INFORMATION NDH8302P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology.
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ndh8302p0025in7300nsbs0113d |
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NDB7060
Abstract: NDP7060
Contextual Info: Na t io n a l Semiconductor" June 1996 NDP7060/ NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p o w e r field effect tran sisto rs are produced using National's pro p rie ta ry, high cell density, DMOS technology.
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ndp7060/ndb7060bsd1130bsd113d+1ndp7060
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25CC
Abstract: BAS16 BAV99
Contextual Info: BAS16 & Discrete POW ER & Sig n a l Technologies National Semiconductor~ BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol ta- as-cun*«omessenoted Parameter Value Units W|v Working Inverse Voltage
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bas16bav99b50113ddq40541+200md54225cc
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NDP603al
Abstract: NDB603AL Transistor TO220 814
Contextual Info: National f i Semiconductor' January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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ndp603alndb603al0dhg22gtransistor to220 814 |
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