MMBT101 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1015

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR 3 FEATURES 1 2 *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1015

MARKING A4 transistor

Abstract: A4Y SOT23 sot-23 marking 113 sot323 transistor marking MMBT1015G UTC MMBT1015 MMBT1015 MMBT1815 free transistor transistor a4y
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 Lead-free: MMBT1015L Halogen-free: MMBT1015G

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT1015 Features • • • • • PNP EPITAXIAL Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT1815 Features • • • • NPN EPITAXIAL Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA High hFE linearity Complimentary to MMBT1015

marking BA sot-23

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT1015 Features • • • • PNP EPITAXIAL Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High Hfe linearity Complement to MBT1815

Contextual Info: MCC TM Micro Commercial Components MMBT1015-L
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT1015-H









Features • • • • • • • • x • Halogen free available upon request by adding suffix "-HF"

MSD101

Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT1010LT1 MSD1010T1 FR4 GLASS EPOXY
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Saturation Voltage MMBT1010LT1 MSD1010T1 PNP Silicon Driver Transistors Part of the GreenLineTM Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in

transistor sc 308

Abstract: MMBT1010LT1 MSD1010T1 SMD310
Contextual Info: Low Saturation Voltage PNP Silicon Driver Transistors MMBT1010LT1 MSD1010T1 ON Semiconductor Preferred Devices Part of the GreenLine Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION 

MMBT1815G

Abstract: transistors marking c4y transistor C4G UTC MMBT1815G transistor C4G sot-23 MMBT1815 MMBT1015 MMBT1815L transistor CE 014 c4g TRANSISTOR
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ FEATURES *Collector-Emitter Voltage: BVCEO=50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1015 Lead-free: MMBT1815L Halogen-free:MMBT1815G

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Green L ine MMBT1010LT1 MSD1010T1 Low Saturation Voltage PNP Silicon Driver Transistors M otorola Preferred D e vic e s Part of the GreenLine Portfolio of devices with energy-conserving traits. PNP GENERAL PURPOSE DRIVER

Contextual Info: MMBT1015W PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 Description A The MMBT1015W is designed for use in driver stage of AF amplifier and general purpose amplification. L 3 1 Top View V B S 2 G COLLECTOR

MMBT3946

Abstract: MMBT3415 MMBTA20
Contextual Info: Surface Mount Devices National Semiconductor Surface Mount Transistors CO m t-4 O O 2 General Purpose Amplifiers and Switches—NPN C a se Style VCBO V Min VCEO (V) Min VEBO (V) Min TO-236 (49) 75 45 6 MMBT100A TO-236 (49) 75 45 6 50 60 300 100 220 MMBT101

A4Y SOT23

Abstract: transistor a4y
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  * * * *  FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION

c4g TRANSISTOR sot323

Abstract: c4g TRANSISTOR transistor C4G sot-23 transistor C4G free transistor sot723 113 sot TRANSISTOR NPN c4 nf SOT23 MARKING 723CL
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High hFE Linearity Complement to MMBT1015 ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1815 *Pb-free plating product number: MMBT1015L

Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR

A4Y SOT23

Abstract: transistor a4y transistor a4g sot113 NF 723
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION

HF SOT-23

Abstract: MMBT1015 MMBT1815
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT1815 Features • • • • NPN EPITAXIAL Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA High hFE linearity Complimentary to MMBT1015 SILICON TRANSISTOR

Gate Driver SOT-363 Marking Code G

Abstract: MSD101
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBT1010LT1 MSD1010T1 Low Saturation Voltage PNP Silicon Driver Transistors Motorola Preferred Devices Part of the GreenLine Portfolio of devices with energy–conserving traits. PNP GENERAL PURPOSE DRIVER TRANSISTORS

Contextual Info: MMBT101 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)75 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC) I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.75 h(FE) Max. Current gain.

Contextual Info: MMBT1010LT1 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).19 @I(C) (A) (Test Condition)100m

MMBT1010LT1

Abstract: MSD1010T1 SMD310 msd101
Contextual Info: MOTOROLA Order this document by MMBT1010LT1/D SEMICONDUCTOR TECHNICAL DATA  MMBT1010LT1 MSD1010T1 Low Saturation Voltage PNP Silicon Driver Transistors Motorola Preferred Devices Part of the GreenLine Portfolio of devices with energy–conserving traits.