SMD310 Search Results

Contextual Info: MOTOROLA Order this document by MMDF3P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3P 03H D Medium Power Surface Mount Products M o to ro la P r e fe r re d D ev ic e TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS

DTA114EET1

Abstract: DTA114TET1 DTA114YET1 DTA123EET1 DTA124EET1 DTA143EET1 DTA143TET1 DTA144EET1 DTA115EET1
Contextual Info: DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

s5n02

Abstract: AN569 MMSF5N02HD MMSF5N02HDR2
Contextual Info: MMSF5N02HD Preferred Device Power MOSFET 5 Amps, 20 Volts N–Channel SO–8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

AN569

Abstract: MTB30P06V MTB30P06VT4
Contextual Info: MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

2955E

Abstract: AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3
Contextual Info: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.

AN569

Abstract: MTD1N80E SMD310
Contextual Info: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTD1302 MTD1302T4 SMD310
Contextual Info: MTD1302 Advance Information Power MOSFET 20 Amps, 30 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

onsemi SOT-223

Abstract: MMFT2406T1 MMFT2406T3 SMD310 T2406
Contextual Info: MMFT2406T1 Preferred Device Power MOSFET 700 mA, 240 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT–223

AN569

Abstract: MTB60N05HD MTB60N05HDL MTB60N05HDT4 SMD310
Contextual Info: MTB60N05HDL Preferred Device Power MOSFET 60 Amps, 50 Volts, Logic Level N–Channel D2PAK The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

AN569

Abstract: MTDF1C02HD MTDF1C02HDR2 SMD310 "step recovery diode" 1.7 pf
Contextual Info: MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed

AN569

Abstract: MTB9N25E SMD310
Contextual Info: MOTOROLA Order this document by MTB9N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB9N25E Motorola Preferred Device TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS on = 0.45 OHM N–Channel Enhancement–Mode Silicon Gate

t3055vl

Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

AN569

Abstract: MTB2N60E SMD310
Contextual Info: MOTOROLA Order this document by MTB2N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS on = 3.8 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTD10N10EL SMD310
Contextual Info: MOTOROLA Order this document by MTD10N10EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD10N10EL Motorola Preferred Device TMOS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM

20P03HL

Abstract: 20P-03HL 20p03 AN569 MTD20P03HDL MTD20P03HDL1 MTD20P03HDLT4 20p03h
Contextual Info: MTD20P03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

AN569

Abstract: D2C02 MMDF2C02HD MMDF2C02HDR2
Contextual Info: MMDF2C02HD Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–

MTD5N10

Abstract: MTD6N10E AN569 SMD310 SOT 23 MOSFET
Contextual Info: MOTOROLA Order this document by MTD6N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6N10E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM

5n02

Abstract: 5N02Z AN569 MMDF5N02Z MMDF5N02ZR2 10E-04
Contextual Info: MMDF5N02Z Power MOSFET 5 Amps, 20 Volts N–Channel SO–8, Dual EZFETst are an advanced series of Power MOSFETs which contain monolithic back–to–back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature low RDS on and true logic

M50P03HDL

Abstract: m50p03 AN569 MTB50P03HDL MTB50P03HDLT4
Contextual Info: MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

1N50E

Abstract: t1n50e MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 T1-N50E
Contextual Info: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage

paste

Abstract: AN569 MTD3N25E SMD310
Contextual Info: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD3N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET

D2P03

Abstract: MMDF2P03HD AN569 MMDF2P03HDR2 Q302
Contextual Info: MMDF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

20N03HL

Abstract: MTD20N03HDL1 MTD20N03HDLT4 AN569 MTD20N03HDL
Contextual Info: MTD20N03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level N–Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain–to–source diode with a fast recovery time.

AN569

Abstract: MTD2955 MTD2955E SMD310 MTD2955 sot-223 MTD2955E-D
Contextual Info: MOTOROLA Order this document by MTD2955E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET