SOT723 Search Results

sot723

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA143EMPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SOT-723 * Small surface mounting type. SOT723

2SC3883

Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812

2SC3883

Abstract: MRF-466 STI-801 S01428 STi-812 MRF497 s2000 npn mrf239 trw rf THB94
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812

Contextual Info: DTC143 TM/TE/TUA/TCA/TSA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

TCA 200

Abstract: transistor DTA144 TCA 210 DTA144
Contextual Info: DTA144 TM/TE/TUA/TCA/TSA PNP Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

DTC144

Abstract: dtC144 transistor marking code A12 SOT723
Contextual Info: DTC144 TM/TE/TUA/TCA/TSA NPN Small Signal Transistor DTS+A1 Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

ZCA TRANSISTOR

Abstract: marking E13 diode ZUA SOT23 sot-23 MARKING CODE ZCA ZCA transistor sot 23 marking CODE ZUA SOT23 MARKING ZE SOT-23 SOT23 MARKING ZuA ze 003 e13 142
Contextual Info: DTA143 ZM/ZE/ZUA/ZCA/ZSA PNP Small Signal Transistor Z+A1SA Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

DTC144

Contextual Info: DTC144 EM/EE/EUA/ECA/ESA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

TRANSISTOR DTA114

Abstract: 301 marking code PNP transistor dta114
Contextual Info: DTA114 TM/TE/TUA/TCA/TSA PNP Digital Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with

LESDA14V2LT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual transil array for ESD protection General Description The LESDA25VLT1G is a dual monolithic voltage suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps the voltage just above the logic level

SOD-923 zener

Abstract: SOT PL IEC1000-4-2 33039
Contextual Info: LESHAN RADIO COMPANY, LTD. Quad Array for ESD Protection LESDA6V8V5T1G This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as

Contextual Info: Doc No. TT4-EA-12576 Revision. 3 Product Standards MOS FET FK3303010L FK3303010L Silicon N-channel MOS FET Unit : mm For switching FK350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-12653 Revision. 2 Product Standards MOS FET FJ3303010L FJ3303010L Silicon P-channel MOSFET Unit : mm For switching FJ350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-12653 Revision. 3 Product Standards MOS FET FJ3303010L FJ3303010L Silicon P-channel MOSFET Unit : mm For switching FJ350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

IEC61000-4-4

Contextual Info: LESHAN RADIO COMPANY, LTD. Transient Voltage Suppressors for ESD Protection General Description The LESD5Z6.0T1G is designed to protect voltage LESD5Z6.0T1G sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and

diode transient

Abstract: 15KV LGSOT04LT1G LGSOT05LT1G LGSOT08LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Transient Voltage Suppressors for ESD Protection General Description LGS0T12LT1G The LGS0T12LT1G is a transient voltage suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps

Suppressors

Abstract: mark TP SOD EFT 323 H SOD-723
Contextual Info: LESHAN RADIO COMPANY, LTD. Transient Voltage Suppressors for ESD Protection General Description The LESD3Z5.0T1G Series is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and

LESD9D5

Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D3.3T5G ESD PROTECTION DIODE Discription The LESD9D3.3T5G is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of

Leshan Radio Company

Contextual Info: LESHAN RADIO COMPANY, LTD. LESD9D5.0T5G ESD PROTECTION DIODE Discription The LESD9D5.0T5G is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of

DTC114

Abstract: marking code tca transistor dtc114
Contextual Info: DTC114 TM/TE/TUA/TCA/TSA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

DTC114EM

Abstract: DTC114TM DTC114YM DTC123EM DTC124EM DTC124XM DTC143EM DTC143TM DTC143ZM DTC144EM
Contextual Info: DTC114EM Series Bias Resistor Transistor NPN Silicon P b Lead Pb -Free 3 COLLECTOR 3 1 2 R1 1 BASE R2 SOT-723 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating Symbol VCBO Value 50 Unit V VCEO 50 IC 100 V mA Symbol Max Unit PD 260 2.0 mW mW/°C

Contextual Info: DTA114EM Series Bias Resistor Transistor PNP Silicon P b Lead Pb -Free 3 COLLECTOR 3 1 2 R1 1 BASE R2 SOT-723 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating Symbol VCBO Value 50 Unit V VCEO 50 IC 100 V mA Symbol Max Unit PD 260 2.0 mW mW/°C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR  FEATURES * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SC4617L-x-AB3-R 2SC4617G-x-AB3-R

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4