SOT 23 1ft
Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
Contextual Info: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*
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n54842n54852n5486mmbf5484+8mmbf5485mmbf5486ot-23sot 23 1ft2n54842ns4841ft sot23transconductance 2n5485
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1n9148
Abstract: IR diode D4-D4 1N3064 1N4148 1N4149 1N4150 1N914 1N914A 1N914B 1N916
Contextual Info: Switching Diodes Computer Diodes Glass Package V R RM Device No. Package No. (V) R (nA) C V @ R <V> Max @ Ja) <PF> (ns) Max Max Test Cond. Process No. Min . Max (V> 1N914 DO-35 100 25 5000 20 75 1 10 4 4 (Note 2) D3 1N914A DO-35 100 25 5000 20 75 1 20 4
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1n914do-351n914a1n914b+81n9161n916a1n9148ir diode d4-d41n30641n41481n41491n4150
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027Q
Abstract: NDS336P
Contextual Info: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS
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ksd113
Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
Contextual Info: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100
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bs01130d0b70fllnsd206o-202+11nsdu56nsdu57ksd113nsd61812n43552n43542n67262n6727mpsa92151a100mpsw92
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NDP506BL
Abstract: Zener diode DW NDP506A NDB506AL NDB506BL NDP506AL
Contextual Info: National Semiconductor" May 1995 NDP506AL / NDP506BL NDB506AL / NDB506BL N-Channel Logic Level Enhancement I ide Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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ndp506alndp506blndb506alndb506bl+5s011300gm0215bsd1130zener diode dwndp506a
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TN3440A
Contextual Info: S e m i c o n d u c t o r TN3440A & D iscrete P O W ER & S ig n a l T echnologies . National T N 3440A NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se in h o rizo n tal driver, c la s s A off-line a m p lifier an d off-line sw itching a pp licatio ns. S o u rc e d from P ro c e s s 36.
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tn3440alsd11300q40bmo-226+2l50113dd01dl42
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d4sh8
Abstract: D45H8 NZT45H8 k200g
Contextual Info: D45H8 I NZT45H8 ' N a t i on a I Discrete POWER & Signal Technologies S e m i c o n d u c t o r " D45H8 NZT45H8 SOT-223 TO-220 B PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.
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d45h8nzt45h8o-220ot-223+3lsd1130d4sh8k200g
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FJT1
Abstract: FJT1100 1N456A FJT1102
Contextual Info: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A
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NZT751
Contextual Info: NZT751 Diserete POWER & Signal Technologies u c t o r " NZT751 E B SOT-223 PNP Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. Absolute Maximum Ratings*
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NDS9410 equivalent
Abstract: NDS9410
Contextual Info: National ÆlÆ Semiconductor November 1993 NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology. This
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BSS123
Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
Contextual Info: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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bss100bss123k501130bs0113d+385s100transistor bss123k5011
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LD 1106 BS
Abstract: NDS8426
Contextual Info: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.
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