NSE180
Abstract: 2N4945 D40D8 NSDU02 nsd102 NSDU05
Contextual Info: NATL SEMICOND DISCRETE SEE » • bSG1130 GG377fl4 T ■ T-27-ÔI NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc/Vce (V) NSE871 TN1711 • Min Max (mA/V) Vea (sat) (V) Max 50 40 300 25/20 500/10 1.5 150 TO-202 TO-237 Vceo lc/lb (mA)/(mA)
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bsg1130gg377fl4nse871tn1711+12mps6561msp65602n54492n671492pu01d40d1nse1802n4945d40d8nsdu02nsd102nsdu05
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NSD102
Abstract: D42C5 040e5 NSE180 2N4945 NSE871 d42c2 TO-202 transistor NPN NSDU05 2N6714
Contextual Info: NATL SEMICOND DISCRETE 5SE D • bSG1130 Ci a377a4 T ■ T-27-0! NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc /V ce Vceo (V) NSE871 TN1711 ’ Vce (sat) (V) Ic/lb M ax (mA)/(mA) Min M ax (m A/V) 50 40 300 25/20 500/10 1.5 150 Package
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bsg1130cia377a4t-21-0nse871+15tn1711o-202o-237mps6561msp65602n5449nsd102d42c5040e5nse1802n4945d42c2to-202 transistor npnnsdu052n6714
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2N6591
Contextual Info: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120
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bsg1130g0377nse181pn3568+7tn2017tn21022n5321d40d10d40d11d40d132n6591
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NPN RF Amplifier
Abstract: y-parameter MMBTH20 MPSH20 U407
Contextual Info: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A
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lsg113b501130npn rf amplifiery-parameter+3mmbth20mpsh20u407
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BC817-25
Abstract: BC817-40
Contextual Info: S e m i c o n d u c t o r " B C 817-25 B C 8 1 7 -40 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* TA = 25°C unless otherwise noted
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m073
Abstract: NZT6728 TN6728A b41 sot223
Contextual Info: TN6728A I NZT6728 & Discrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6728 TN6728A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.
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tn6728ao-226nzt6728ot-223+6bs0113d4d73flb501130m073cim073b41 sot223
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4-221
Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
Contextual Info: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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nds9958b5011300q400bl4-221+2transistor mosfet n-ch drain currentdual n & p-channel mosfet
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2N5458 NATIONAL SEMICONDUCTOR
Abstract: 2N5457 2N5459 2n5458
Contextual Info: Semiconductor 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 SOT-23 S Mark: 6 D / 6 1 S / 6 L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from
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2n54572n54582n5459mmbf5457+3mmbf5458mmbf54592n5458 national semiconductor
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GG3C
Abstract: NDP405A cq 532 stablizer circuit diagram NDP405B NDP406A NDP406B NDP405 110981
Contextual Info: a t i o n a Semiconductor l October 1991 NDP405A/NDP405B, NDP406A/NDP406B N-Channel Enhancement Mode Power Field Effect Transistor G e n e ra l D e s c r ip tio n F e a tu re s These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high
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ndp405a/ndp405bndp406a/ndp406b0v-00gg3c+8ndp405acq 532stablizer circuit diagramndp405bndp406andp406bndp405110981
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TN4033A
Contextual Info: TN4033A D iscrete P O W E R & S ig n a l T echnologies National Sem iconductor" TN4033A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA and collector voltages up to 70V. Sourced from Process 67.
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JJS-100
Abstract: NDS9933A
Contextual Info: June 1996 National Semiconductor" ADVANCE INFORMATION & NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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nds9933a300ps03clcljjs-100 |
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diode T35
Abstract: NDS355N diode T35 -4-D6
Contextual Info: & National Semiconductor M a rc h 1 9 9 6 " NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p o w e r fie ld effect tran sisto rs are produced using N ationals pro p rie ta ry, high cell density, DMOS
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nds355not-23b501130bsg1130+2diode t35diode t35 -4-d6
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ndc7002n
Contextual Info: National March 1996 Semiconductor” & NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDH8447
Contextual Info: National Semiconductor May 1996 ” NDH8447 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m o d e p o w e r field - effect tran sisto rs are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.
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92PU51A
Abstract: 2N671 ksd113 0410 2N4355 transistor 2N4033 2N4031 2N4033 2N4037 2N4356
Contextual Info: This PNP Transistors 2N4030 TO-39 60 VCEO VEBO V (V) Min Min 60 5 •ces * ICBO@VcB (nA) (V) Max 50 50 By Its 2N4031 TO-39 TO-39 2N4Û36 TO-39 60 80 90 80 60 80 85 TO-39 60 40 2N4314 TO-39 90 65 5 5 7 7 50 50 50 20 60 50 60 60 10 25 40 30 40 70 100 75 25
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2n4030to-392n40312n4032+102n4033t-31-0192pu51a2n671ksd11304102n4355transistor 2n40332n40372n4356
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2N3567
Abstract: NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5
Contextual Info: This 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40 35 20 2N1711 TO-5 75 35 7 10 60 40 100 75 35 20 120 120 300 150 10 5.0 1.3 150 20 50 50 12 500 150 10 100 fiA 10 10 10 10 1.5 1.3 150 25 60 50 12 Note 1 12 500 150 10 100 pA IO jiA
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b501l3a0370mmt-27-cit-27-01+102n3567nsdu07transistor 2n3569npn transistors" 2n3567nsd102nsd4582n35682n356992pu393d40e5
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LD 1106 BS
Abstract: NDS8426
Contextual Info: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.
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J108
Abstract: J109 J110
Contextual Info: Se mi c o ndu c t o r " J108 J109 J110 N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58. Ab$Olllt6 Maximum Ratinçjs Symbol TA = 25°C unless otherwise noted
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125-gbsg113qd40c12cj108+2j109j110
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j110, national
Abstract: NATIONAL J110
Contextual Info: S e mi c o n d u c t o r “ J 108 J 109 J 110 N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58. Absolute Maximum Ratings* Symbol TA ^ 25°C unless otherwise noted
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bsg1130j110, nationalnational j110 |
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