BSD113 Search Results

NR421DS

Abstract: 455KHZ NR461 88-108
Contextual Info: 'NATL SE M^O ND z z {DISCRETE} 650 î 130 NATL SEMICOND, z bSD113D DISCRETE D D 3 S t il 7 28C 35617 National Semiconductor Q. <0 s i f ic EflC D 1 T '- 'Z / ' z NR461ÌNPN) low-noise RF/IF transistor features ITI package and lead coding • • Low Ccb for excellent RF stability

TO-22OAB

Contextual Info: NATL SEMI CONO DISC RET E HE D | bSD1130 003710^ 7 Proc. Famllj * CC tX IB "O e £ o H 3 P 1a? ffl 5 2 Z Z z z OC O ÛC DC w* P CM 3 S 2 £ ¿2 z z z z z w f z ST eg z P “ CO P “ CO P CO* ^ « a> <5 S S JB a> © z z z z z z z z U f». ¡2 ir —

MMBT201

Contextual Info: NATL SEMICGND DISCRETE H E D I bSD113D □ U3V d J. d U | • o National Semiconductor * Z IO T-2 7-/3 3 to o MMBT201 PN201 TUG/10100-5 PNP General Purpose Amplifier . Electrical Characteristics Ta = 25°C unless otherwise noted Min Parameter Symbol Max Units

n 5j

Abstract: NJ 20 U1 W NSDu95 SK-I 10
Contextual Info: NATL SEMICOND {DISCRETE} 2fl bSD113D 00354b5 L T-33-31 This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r NATL SENICOND {DISCRETE} 50 D E | b S 0 1 1 3 G DC^SMbt fl | ~ ^ T-33-31 NATL I« SZ ÌEMI C O N D , DISCRETE 28C

2N3702 NATIONAL SEMICONDUCTOR

Abstract: national 2N3392 NATIONAL SEMICONDUCTOR TO-92 2N3393 2N3702 BC338/BC328 2N3391A 2N3392 PN3565 2N4124
Contextual Info: n NAIL SEMICOND -[DISCRETE t.3E D • bSD113a Q03TS33 b7ti Devices V CE0 sust (Volts) Min 25 NPN PNP mi mA NF (dB) (MHz) Min mA Max 5.0 P D (Amb) Package (mW) @25 °C Max Min Max 2N3391A 100 250 500 2.0 120 Typ. 2.0 2N3392 100 150 300 2.0 120 Typ. 2N3393

lg crt tv

Abstract: NB212 NB211 NB222 NB112EY NB111 NB022 NB022EY
Contextual Info: bSD1130 003 SST7 'NATL SEMICOND {DISCRETE} 6501130 NATL SEMICOND, Z CL CO CM CM 28C 3 5 5 9 7 D I S CR ET E D T-ll-Z 3 E JI National m m Semiconductor as CM CM CM NB221 222 2 2 3 ÎP N P ) 500m A medium current driver transistors features CM CM CÛ z Q.

BC337 BC547

Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
Contextual Info: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150

Contextual Info: Surface Mount Diodes bSD113D Discrete POWER & Signal Technologies National Sem iconductor " Surface Mount Diodes ÜÜM0MÖ5 Computer Diodes by Descending Bv LEADLESS GLASS PACKAGE 71S Device No. Package No. FDLL914 LL-34 (V) Min Ir (nA) Max 100 25 Bv C V

capacitor discharge ignition

Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
Contextual Info: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding

NDB406B

Abstract: NDB406BL ndb706al NDB510AEL NDB510AL NDB510BEL NDB610AEL NDB610AL NDB610BEL NDB610BL
Contextual Info: _ . m bfiE D Power M O S F E T S continued bSD113Q 23b M N S C S TO-263AB Logic Level DMOS NATL SEMICOND (DISCRETE) N Channel N Channel r DS(OB)@ lo ^ B S (Volts) Min 100 Device Po b (Amps) (Watts) (mfì) (Amps/Volts) Max Max Max NDB710AEL 38 21/5 42 42

2N3819 NATIONAL SEMICONDUCTOR

Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
Contextual Info: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k

NR421

Contextual Info: SAC D I bSD1130 ODBSbGi 4 NATL SEPIICON] {DISCRETE} 6 5 0 1 1 3 0 N A TL S E M I C O N D , Z 28C D I S C R E T E ) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features 1 | package and lead coding ■ 0.65pF typical feedback capacitance for excellent

transistor MPSA13 NATIONAL

Abstract: MPSA13 MMBTA13 MPSW13
Contextual Info: NATL SEMICOND DISCRETE 11E D bSD1130 □ □ 3 7 2 b e] S | l~~27~Zc{ National Semiconductor U > mJ. 03 -o O —X u MPSA13 MPSW13 MMBTA13 3 I co TL/G /10100-5 NPN Darlington Transistor Electrical Characteristics t a = 25°C unless otherwise noted Parameter

NDP505A

Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
Contextual Info: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80

92PU45

Abstract: SE9300 100C DOBS435
Contextual Info: NATL SEHICOND {DISCRETE* 5fi DE | bSD113D 00BS4B2 2 | NPN Transistors This Material Copyrighted By Its Respective Manufacturer SEMICOND 6501130 2fl {DISCRETE} NATL SEMICOND, DE~| b S 0 1 1 3 D in o in o in o 8 8 in o in o o o o o o O 200 200 in ' in in in

transistor pnp a111

Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E
Contextual Info: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features

TOKO A 50 GTE

Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
Contextual Info: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■

MMBT4209

Abstract: 2N4209 MMBT3646 transistor t0 92 2N5771 MMBT5771 PN2369 PN2369A PN3646 PN4275
Contextual Info: bflE » • bSD113D □□3TS31 7 ME High Speed Saturated Switching Transistors continued Devices VcEOIauit) (Volts) Min 15 ton (ns) Max mA M M BT3646 18 28 PN2369 12 18 PN2369A 12 PN3646 18 NPN PUP PN4275 12 10 hFE @ t0n @ < c (ns) Max INSCS CD V C E (tat)« lc Iß

MMBT4121

Abstract: MMBT2904 MMBT3905 TO236 pn4122
Contextual Info: NATL SEMICOND DISCRETE 5SE ]> • bSD1130 0037777 2 ■ ~T~~2~7~0J PNP General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo(V) Min Min Min Max (mA/V) BCF29 BCF30 BCW61A 32 32 32 32 32 32 120 215 120 260 500 220 2/5.0 2/5.0 2/5.0 2N1132A

MMBT4209

Contextual Info: bflE T> m bSD113D D03TS31 High Speed Saturated Switching Transistors continued Devices VcEO(siot) (Volts) Min 15 NPN ion PHP h FE @ I j V c E(ta l)«lc *T mA (MHz) Mfn P o (Amb) Package (mW) @25°C MMBT3646 18 28 300 30 30 0.2 30 3.0 350 TO-236* 350 PN2369

MMBT2904

Abstract: MMBT2904A MMBT3905 MMBT4916 MMBT3638A MMBT3702 MMBT3703 MMBT4402 MMBT4403 MMBT5143
Contextual Info: This s S S S ä d U C t o Surface Mount Transistors r General Purpose Amplifiers and Switches—PNP VCBO* VcEO VEB0 V (V) (V) Min Min Min By 40 5 MMBT2904A TO-236 (49) 60 40 5 MMBT2905 TO-236 (49) 60 40 5 MMBT2905A TO-236 (49) 60 40 5 MMBT2906 TO-236 (49)

B5G1

Abstract: BSS138
Contextual Info: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

FDLL456

Abstract: FDLL456A FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A 456 diode
Contextual Info: . Discrete POWER & Signal Technologies Semiconductor* 1N/FDLL 456/A - 1N/FDLL 459/A CO LOR B A N D M A R K IN G DEVICE LL-34 DO-35 1ST BAND 2ND B A N D FD LL4 5 6 F D L L4 5 6 A FD LL4 5 7 F D L L4 5 7 A FD LL4 5 8 F D L L4 5 8 A F D LL4 5 9 F D L L4 5 9 A

l5 transistor PNP

Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
Contextual Info: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high