NA42 Search Results

NA42 transistor

Abstract: NA42U NA41 16AL 35570 NA42 pnp 557
Contextual Info: äfl NA41 NPN , NA42(PNP) SENICOND {DISCRETE} D E ^ b S D 1 1 3 D Doassti N A T L S E M I C O N D , (D I S C R E T E ) 3 28C National Semiconductor NA41(NPN) NA42(PNP) 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features

transistor pnp a111

Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E
Contextual Info: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features

7408, 7404, 7486, 7432

Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
Contextual Info: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers

d3s diode

Contextual Info: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C

LA4100

Abstract: LA3201 la4102 la 4102 FA-2J fm mic IC - LA3201 LA41Q0 la 4287 250RA
Contextual Info: LA4100,4101,4102 Mac 4 2 8 B * / ' ' > y f i ') - r m m m n D074 $ # * -* * O feJB W Ä * fi a V NaC428 A n $ jx = > ^ 'J - T & f a Í E l & S LA41Q0 Fi ÓV 4 0 LA4102 \ t i .o w t y p ) ., fs] C < L A 4 IO l/y ^ 7* , 2* fW (typ) tti i ? £ > * * £ *

NB111

Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
Contextual Info: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding

Contextual Info: jicriesr— *. . • , '■ t Tirtt-s. ■•’.: 2 .ffc * * C A M TRlM M t p e p . Z2<^ c a b c -st- ' i>»s£ ItT J - Z .2 3 A+4P , 3 CPU r *euHflfc rta if^ U C -tip M ti f i U ^-3a-:,z;„;v^V: : D —4 0 4 . < i* - S 4 c r t . AWWOKt^ iao u u u p t t t i i i i ' j n . ' - -•

m6845

Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics
Contextual Info: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate

NA38

Abstract: NA63 YN17 YN24 YN26 na46 YN11 na51 AE12AE13 YN40
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information 2.5Gb/s 64x65 Crosspoint Switch VSC836 Features • 64 Input by 65 Output Crosspoint Switch • On-chip Input Terminations • 2.5Gb/s NRZ Data Bandwidth • PECL Compatible Differential Output Driver

NA2X

Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization
Contextual Info:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the

434 289

Abstract: 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20
Contextual Info: TGC100M MILITARY SERIES 1-/im CMOS GATE ARRAYS Release 2.0, A PR IL 1989 * AC PERFORMANCE TEST STRUCTURE Fully Characterized for M ilitary Applications — Product Fully Compliant w ith the Requirements of M IL -S T D -883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance

NA42 transistor

Abstract: NA42 BTNA42A3 C209A
Contextual Info: CYStech Electronics Corp. Spec. No. : C209A3-H Issued Date : 2003.03.18 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor NA42A3 Description • High breakdown voltage. BVCEO=300V • Low collector output capacitance. (Typ. 3pF at VCB =30V)

na44

Abstract: NA51 transistor datasheet na52 transistor datasheet na60 U2 A63 NA11 NA12 NA13 NA43 na46
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information 2.5Gb/s 64x65 Crosspoint Switch VSC836 Features • 64 Input by 65 Output Crosspoint Switch • On-chip Input Terminations • 2.5Gb/s NRZ Data Bandwidth • PECL Compatible Differential Output Driver

bb 9790 schematic diagram

Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
Contextual Info: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one

LB1824

Abstract: n4264 AGQJ ECL16
Contextual Info: ¡ZD .n -3 > ‘:7 a* te T op. EE II 33 M; Sa t ít B fB £@ H H H ii ÉÍD Ù—I il s j ro m if cü H m ÏK 08 A a » m ü i®? <8 m if c5 m / T a = 25t: fit -n ë <k A O Ms M Mb m M mm EE m m m if < » » i Ptií T m H NJ o □ n VC O V'K |J & m EE <

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

NB111

Abstract: npn general purpose amplifier E28C nb121
Contextual Info: ~ 2ä NATL SEHICOND {DISCRETE} 650 1130 a. Z a CO CM NATL S E M IC O N D , D E |b s a ii3 Q a a B ssT a 28C 35593 D IS C R E T E National Semiconductor T- r> CM CM NB121,122,123(PNP) 100mA general purpose transistors CM features rCÛ z V» z CL z (TI package and lead coding

TSC500

Abstract: 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068
Contextual Info: TSC500 SERIES 1-pm CMOS STANDARD CELLS RELEASE 1.2, APRIL 1989 • High-Performance, 1-pin EPIC CMOS Efficiently Achieves System-Level Designs BOND PAD COMPILER RAM MSI FUNCTION • TSC500 Library Includes Macros for - Static RAMs, Register Files - First-In First-Out Memories

2SK1909

Contextual Info: Ordering number: EN 4227 2SK1909 No.4227 N-Channel MOS Silicon FËT Very High-Speed Switching Applications F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1909-applied equipment.

DL05L

Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
Contextual Info: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are

DIGITAL GATE EMULATOR USING 8085

Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
Contextual Info: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S

NA50

Abstract: nA41 na44 NA19 NA63 AE12AE13 NA38
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Datasheet 1.6Gb/s 64x64 Crosspoint Switch VSC852 Features • 64 Input by 64 Output Non-blocking • Fully Differential Data Path, PECL Compatible • Full Broadcast/Multicast Capability • On-chip Input Terminations • 1.6 Gbits/sec NRZ Data Bandwidth

Contextual Info: D A TA SHEET NECE MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260, 424260 are 262 144 words by 16 bits dynamic CMOS RAMs w ith optional fast page mode and byte read/write mode.

NA52 transistor datasheet

Abstract: na52 Multiplexor 64 inputs na44 NA51 transistor data sheet NA51 transistor datasheet na31 NA62 NA11 NA12
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Data Sheet 1.6Gb/s 64x64 Crosspoint Switch VSC852 Features • 64 Input by 64 Output Non-Blocking • Fully Differential Data Path, PECL-Compatible • Full Broadcast/Multicast Capability • On-Chip Input Terminations • 1.6Gb/s NRZ Data Bandwidth