B5D1130 Search Results

NPD5564

Abstract: NPD5566 NPD8303 npd5565 2N5565 T071 2N5906 dual jfets NPD5566 Dual jfets
Contextual Info: Dual JFETs • b5D1130 DD^^SDS bSD « N S C S NATL SEHICOND DISCRETE N Channel vP Device (V) Min Max G* VGS1-2 (mmho) Min Max Vos (mV) Max Drift (nV/C) A V bs Max ßfc ■oss Match Match % % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50

NZT6715

Abstract: TN6715A
Contextual Info: TN6715AI NZT6715 & _ D iscrete P O W E R & S ig n a l Technologies National Se m i ro n d u c I o r " TN6715A NZT6715 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A.

NDS8839H

Abstract: Complementary MOSFET Half Bridge
Contextual Info: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

BD371C-10

Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
Contextual Info: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o

DG40B

Abstract: DY TRANSISTOR PN918
Contextual Info: u c t or" PN918 C MMBT918 TO-92 SOT-23 B M ark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R

FRP1620CC

Abstract: FRP1610CC FRP1605CC FRP1615CC FRP1640CC FRP1650CC FRP1660CC FRP2005CC FRP2010CC FRP2015CC
Contextual Info: z j m N a S e t m i o i n c a o l n Dual Rectifiers, Common Cathode d u c t o r If Avg. A V TO-220AB (38) 50 10 50 0.95 8 16 FRP1610CC TO-220AB (38) 100 10 100 0.95 8 FRP1615CC T0220A B (38) 150 10 150 0.95 FRP1620CC TO-22ÛAB (38) 200 10 200 FRP1640CC TO-220AB

BAV70

Abstract: BAV74 BAV70 ON diode bav70 BAV99
Contextual Info: BAV70 / BAV74 & Discrete POW ER & Signa l Technologies National Semiconductor" BAV70 / 74 High Conductance Ultra Fast Diode Sourced from P ro ce ss 1 P. S e e B A V 9 9 for characteristics. Absolute Maximum Ratings* T A = 25°C unless otherwise noted Value

Contextual Info: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

m 861

Abstract: NDB6051 NDP6051 GCMOz 225si T-50113
Contextual Info: é> Na t io na I Semiconductor'' M ay 19 96 NDP6051/ NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

ir 728p

Abstract: 728p Mark T92 BSR18A
Contextual Info: Discrete POWER & Signal Technologies S e m i c o n d u c t o r “ BSR18A & -, . , national BSR18A Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose am plifier and switching applications at collector currents of 10 nA to 100 mA.

transistor 6D

Abstract: D040 MMBTH81 MPSH81 transistor BUV 92
Contextual Info: MPSH811MMBTH81 D is c r e te POV rE R & S i g n a l T ech r o lo g ie s National Semiconductor MPSH81 MMBTH81 S0T# B Mark: 3 D PNP RF Transistor This device is designed fo r general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA

BF245C

Abstract: BF245A BF256B BF244A BF244B BF244C BF245B BF256A BF256C BSR56
Contextual Info: <J CT> Oì <J> h- O) O) 0> o> ^ ^ 55 8 8 8 8 8 8 in in in 8 8 8 U. z S • s « p ll ^ £ i i in m N ip in in SL H h >8 s o 8 >8 2 2 u. a o o o o CN CM CM CM « 5 S r> r* r* in in in in <£><£><£> <0 CO CO <0 CO 3 3 4.5 4.5 4.5 in in in in in in in m in in in m

50113G

Abstract: BSR17A dc f 7403
Contextual Info: BSR17A Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " & BSR17A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

BF244A

Abstract: "N-Channel JFET" bf244c BF244B jfet s00 BF244
Contextual Info: " BF244A BF244B BF244C BF244A / BF244B / BF244C uctor D iscrete POWER &. Signal Technologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low capacitance. Sourced from Process 50.