2N2222A TO-92
Abstract: 2N4401 NATIONAL SEMICONDUCTOR D41D5 bc857 to 92 D41D4 bc857 to92 2n2222a surface PN3644 MPS6531 BC857
Contextual Info: NATL SEMICON] D I S C R E T E ) bflE D • L501130 14S Devices (Volts) Min Min Max BC857 100 125 40 fT @ lc NF P D(Amb) Paekage tnA (MHz) Min mA (HB) Max 800 2.0 300 Typ 10 10 TO-236* (mW) @25°C 350 BC860 100 125 800 2.0 300 Typ 10 3.0 TO-236* 350 BCX71
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l501130bc857o-236bc860+13bcx71bcx59bcx79t0-922n2222a to-922n4401 national semiconductord41d5bc857 to 92d41d4bc857 to922n2222a surfacepn3644mps6531
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fjt1101
Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
Contextual Info: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125
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1n456do-351n456a1n457+71n457a1n458fjt1101fjt11021n459afjt11001n458a
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NDS8936
Contextual Info: National Semiconductor July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These IM-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDT2955
Abstract: ACAA TRANSISTOR
Contextual Info: June 1996 Nat ionaI Sem iconductor" NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS te chnology. This
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ndt2955125-csd113g0d4014d+1acaa transistor
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MMBT2907A
Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
Contextual Info: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier
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pn2907ammbt2907apzt2907aot-23+7ot-223mmpq2907nmt2907bs0113ddd40ti30bs01130t092
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pu2211
Abstract: 4835D SiS 961 tp51112 MITAC MPU mitac 8 PU516 SiS961 SERVICE MANUAL tv hyundai w220 foxconn
Contextual Info: SERVICE MANUAL FOR 8575A 8 5 7 5 A BY: Sissel Diao TESTING TESTING TECHNOLOGY TECHNOLOGY DEPARTMENT DEPARTMENT // TSSC TSSC Aug . 2002 8575A N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………
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mpga478sis650sis691sis301lv+14ch7019pci1410gguupd72872ieee1394pu22114835dsis 961tp51112mitac mpumitac 8pu516sis961service manual tv hyundai w220foxconn
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diode RN 1220
Abstract: NDT455N diode 561
Contextual Info: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS
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ndt455not-223lsd113d00401e+2diode rn 1220diode 561
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NDS9435A
Contextual Info: N a tio n a l Semiconductor M ay 1996 " NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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L50Q
Abstract: BCW65C
Contextual Info: S e m i c o n d u c t o r “ BCW65C D iscrete P O W ER & S ig n a l Technologies National BCW65C M a rk : E D NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.
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2n3904 spice model
Abstract: 2N3904 equivalent 2N3904 2n3904 spice model of 2n3904 MMBT3904 2N39041 2N3904 b10 50113G L50113
Contextual Info: 2N3904 MMBT3904 SOT-23 B Mark: 1A MMPQ3904 PZT3904 SOT-223 SOIC-16 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 M H z as an amplifier. Sourced from Process 23.
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2n3904mmbt3904mmpq3904pzt3904+10ot-23soic-162n3904 spice model2n3904 equivalent2n3904 spicemodel of 2n39042n390412n3904 b1050113gl50113
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capacitor discharge ignition
Abstract: NB313Y NA61W NB022EY 113D capacitor nb121 NB111 NA61 NB022
Contextual Info: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, D F | b S D 1 1 3 0 003SS77 b DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding
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003ss77o-126o-22do-220+13nb022eynb123eynr001enb113eynb111eycapacitor discharge ignitionnb313yna61w113d capacitornb121nb111na61nb022
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2NS087
Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
Contextual Info: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.
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2n50862n5087mmbt5086mmbt5087+8ot-23b501130bsd113d2ns0872n5087 national semiconductor2ns086t0920013581
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BC817-40
Abstract: BC817-25 DD40
Contextual Info: B C 8 1 7 -2 5 B C 8 1 7 -4 0 BC817-25 / BC817-40 tu D iscrete P O W E R & S ig n a l Technologies , National Semiconductor' NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A.
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capacitor discharge ignition
Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32
Contextual Info: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding
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003ss77o-126o-220io11f+13nb022eynb123eynr001enb113eynb111eynb121eycapacitor discharge ignitionnb313yna61wna62ignition transformernb111nb32
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vt1631
Abstract: 8375X intel g31 motherboard repair gigabyte g31 MOTHERBOARD SERVICE MANUAL CB-1410 A1 SERVICE MANUAL tv mitsubishi ct 29 b4 est fujitsu fpcap full Socket-462 lg r40 MOTHERBOARD CIRCUIT diagram via vt8235
Contextual Info: SERVICE MANUAL FOR 8375X BY: Ally.Yuan Repair Technology Research Department /EDVD Feb.2004 8375X N/B Maintenance CONTENTS 1. Hardware Engineering Specification …………………………………………………………………… 4 1.1 Introduction ……………………………………………………………………………………………………………. 4
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8375xkn400avt8235w83l950d+10vt1631vt6307lintel g31 motherboard repairgigabyte g31 motherboard service manualcb-1410 a1service manual tv mitsubishi ct 29 b4 estfujitsu fpcap fullsocket-462lg r40 motherboard circuit diagramvia vt8235
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T35 diode
Abstract: diode T35 high voltage diode T35 L501130 FDH3595 MMBD7000 MMBD1501-1505
Contextual Info: S e m i c o n d u c t o r " FDH3595 & Discrete POW ER & Signal Technologies „ . . National FDH3595 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics. Absolute Maximum Ratings* Symbol TA = 25*C unless otherwise noted
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fdh3595mmbd1501-1505l5011300040sb3+4t35 diodediode t35high voltage diode t35mmbd7000
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BF244A
Abstract: "N-Channel JFET" bf244c BF244B jfet s00 BF244
Contextual Info: " BF244A BF244B BF244C BF244A / BF244B / BF244C uctor D iscrete POWER &. Signal Technologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low capacitance. Sourced from Process 50.
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bf244abf244bbf244cl501130+3n-channel jfetjfet s00bf244
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