FJT1101 Search Results

FJT1100

Abstract: FJT1101 BV20
Contextual Info: FAIRCHILD SEMICONDUCTOR ~fl4 D eT| 3 4 ^ 7 4 F JT1100/FJT1101 r-« '-*f FAIRCHILD •b b ^ b b b i Ultra Low Lfeakage Diodes A Schium berger C o m p an y PACKAGES • Ir . . 1.0 pA MAX @ 5 V (FJT1100) • B V . . . 20 V (MIN) (F JT 1 100) F JT 1 1 0 0 F JT 1 1 0 1

fjt1100

Contextual Info: FJT1100 I nternational and S em ico nducto r , I nc . FJT1101 ULTRA LOW LEAKAGE DIODES DIFFUSED SILICON PLANAR :o ABSOLUTE MAXIMUM RATINGS . f SYM BOL vR C H A R A C T E R IS T IC P e a k In ve rse V o lta g e - V „„ lo FJT 11 0 0 FJT1101 R e c tifie d

Contextual Info: DIGITRON SEMICONDUCTORS FJT1100, FJT1101 ULTRA LOW LEAKAGE DIODES IR = 1.0 pA max @ 5V (FJT1100) BV = 20 V (min) (FJT1101) MAXIMUM RATINGS Characteristics Value Storage temperature range -55° to +200°C Maximum junction operating temperature +175°C Lead temperature

fjt1101

Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
Contextual Info: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Contextual Info: Ill _ FEATURES • WIDE SUPPLY RANGE - ±15V to ±225V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT - Up to ±200mA Continuous • LOW BIAS CURRENT - FET Input • PROTECTE D OUTPUT STAGE - Thermal Shutdown • HIGH SLEW RATE- 1000V///S

FJT1100

Abstract: DO-41 package 1N4148 FJT1101 1N463 DO-41 DO-35 DO-7
Contextual Info: Discrete POWER & Signal Technologies Switching Diodes Computer Diodes Device No. Package No. Glass Package VRRM IR (V) (nA) Min Max @ VF VR (V) (V) Min @ Max IF (mA) C trr (pF) (ns) Max Max Test Cond. Process No. 1N914 DO-35 100 25 5000 20 75 1 10 4 4 (Note 2)

1S920

Abstract: 1n4150 sot-23 BAY71 MMB0914 1N916 1N916B 1S921 D0-35 FDLL4148 FDLL4448
Contextual Info: h ô L D. • Silicon Single Junction Diodes continued bSOHBG NATL SEMICOND Vrrm (Volts) Min 100 80 75 Device VFM @ IF l«r I rrm (nA) (ns) (Volts) (mA) Max Max Max Package* 1N916 25 1.0 10 4.0 DO-35 1N916B 25 1.0 30 4.0 DO-35 (Volts) Min 75 70 DO-35 200

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

FJT1

Abstract: FJT1100 1N456A FJT1102
Contextual Info: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A

BD1501

Contextual Info: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B

BAS 20 SOT23

Abstract: BAW62 SOT23 1s920 3BT SOT-23 1n4376 MMBD1201 BAY71 1N916 1S921 FDLL4148
Contextual Info: Vrrm Volts Min 100 80 75 VFM @IF rr (ns) Package* (nA) (Volts) (mA) Max Max Max Ir r m Device 10 4.0 1.0 30 4.0 1.2 200 bsoiiao Düaqsoa 3t.T V RRM (Volts) Min 75 DO-35 Device ilf b fiL D . Silicon Single Junction Diodes (continued) mnscs Vm @lF 1* (ns) Package*

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

Contextual Info: m m sm m ¡WigÊÊmêSiM FEATURES • • • • • WIDE SUPPLY RANGE - ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT - Up to ±150mA LOW BIAS CURRENT - FET Input PROTECTED OUTPUT STAGE - Thermal Shutoff APPLICATIONS • • • •

1N4848

Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
Contextual Info: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70