1N100 Search Results

1N100

Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM

1N100

Contextual Info: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 VDSS ID25 RDS on = 1000 V = 1.5 A = 11 Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

dual diode TO254AA 600V

Contextual Info: OM 1N100SA OM 5N100SA 1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package

"Germanium Diode"

Contextual Info: MCC TM Micro Commercial Components Features • • • 1N100A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 100 Volt Germanium Diode Low Leakage Current Flat Junction Capacitance High Mechanical Strength

Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 1N100P IXTP 1N100P VDSS ID25 RDS on = 1000 V = 1.2 A = 13 Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: 1989963 C E N T R A L S E M I C O N D U C T O R _ 92D 00408 f \ DESCRIPTION The CENTRAL SEMICONDUCTOR 1N100A, 1N270, 1N277, 1N281, 1N283 types are Gold Bonded Germanium Diodes mounted in a hermetically sealed glass case, designed for general purpose applications.

"Germanium Diode"

Contextual Info: MCC Features • • • 1N100A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 100 Volt Germanium Diode Low Leakage Current Flat Junction Capacitance High Mechanical Strength Maximum Ratings

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM

1N100

Contextual Info: High Voltage MOSFET IXTA 1N100 IXTP 1N100 VDSS ID25 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

1N100

Contextual Info: Advance Technical Information High Voltage MOSFET IXTH 1N100 IXTT 1N100 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM

1N34A do-35

Abstract: 1N34A reverse recovery OA47 AA118 AA143 oa90 AA143 OA90 AA218 1N60 LL 34 1N3467
Contextual Info: B IC C I N T E R N A T I O N A L 30E D • H7nfl3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270

1n270

Abstract: diode germanium 1n270 diodes 1n270 diodes 1N100A 1N283 1N100A 1N277 1N281
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR 92D 00406 r \ DESCRIPTION The CENTRAL S E M I C O N D U C T O R 1N100A, 1N270, 1N277, 1N281, 1N283 types are Gold Bonded Germanium Diodes m ounted in a h e r m e t i c a l l y sealed glass case, designed for general purpose applications,

OA47 germanium

Abstract: AA118 AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87 AA117
Contextual Info: B IC C INTERNATI ONAL 30E D • H 7 n f l 3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270 1N276

1N100

Abstract: selenium diode germanium
Contextual Info: 1N100 Germanium Diode 0.90 Diodes Germanium and Selenium Diodes Germanium Di. Page 1 of 1 Enter Your Part # Home Part Number: 1N100 Online Store 1N100 Diodes Germanium Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 10 W RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000

1N91 DATASHEET

Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
Contextual Info: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7

Contextual Info: Gold Bonded 1N100A Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications DO-7 Glass Package AM/FM detectors Ratio detectors FM discriminators 0.018-0.022" 0.458-.558 mm

Contextual Info: Advance Technical Information High Voltage MOSFET IXTH 1N100 IXTT 1N100 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM

gold detectors circuit

Abstract: 1N100A diodes 1N100A
Contextual Info: Gold Bonded 1N100A Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications DO-7 Glass Package AM/FM detectors Ratio detectors FM discriminators 0.018-0.022" 0.458-.558 mm

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

Contextual Info: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 W RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V

Contextual Info: B K C INTERNATIONAL 3QE D • HTTTflB G00G32fci 4 ■ ' “T - O i - O “] BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO* 508 681-0392 ENGINEERING DATA SHEET TYPE 1N100A GOLD BONDED, GERMANIUM, DIODE ABSOLUTE MAXIMUM RATINGS

TP1N100

Abstract: TP1N95 MTP1N100 MS 1117 ADC
Contextual Info: MOTOROLA SC IM E XST RS/R F D I b 3 fc>7254 0 0 0 ^ 5 0 r MOTOROLA ^ f 2 I - n •I SEMICONDUCTOR TECHNICAL DATA M TM 1N95 M TM 1N100 MTP1N95 MTP1N 100 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS