1N87A
Abstract: diode germanium catalog selenium diode
Contextual Info: 1N87A Germanium Diode 0.87 Diodes Germanium and Selenium Diodes Germanium Di. Page 1 of 1 Enter Your Part # Home Part Number: 1N87A Online Store 1N87A Diodes Germanium Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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1n87acom/1n87adiode germanium catalogselenium diode |
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Q458
Abstract: BKC Semiconductors 1N87A
Contextual Info: a Gold Bonded 1N87A Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications D O -7 Glass Package • AM/FM detectors • Ratio detectors • FM discriminators
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1N91 DATASHEET
Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
Contextual Info: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7
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1n34a1n67a1n87a1n100a+141n1911n1921n2701n2761n2771n2831n91 datasheetdo-7diode equivalent 1n34a1n921n911n91 diode1n2951n60
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1N87A
Abstract: germanium diode GERMANIUM "Germanium Diode"
Contextual Info: Datasheet Central 1N87A I lil Sem iconductor Corp. GERMANIUM DI ODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC D 0 - 7 CASE Manufacturers of World C l a s s Discrete Semiconductors DESCRIPTIO N The CENTRAL SEMI CONDUCTOR 1N87A i s a p o i n t c o n t a c t Germani um D i o d e in a h e r m e t i c a l l y
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1n87agermanium diodegermanium |
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CDSH270
Abstract: 1N295 1n91 1N270
Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases TYPE NO. CASE VRRM io VF @ if trr V (mA) (V) (m A) (ns) MAX MAX MAX TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 — POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . POINT CONTACT 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT 1N87A
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1n34a1n67a1n87a1n100a+91n1911n1921n2701n2761n2771n283cdsh2701n2951n91
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1N283
Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases TYPE NO. CASE vrrm 10 VF IF trr V (HlA) (V) (mA) (ns) MAX MAX MAX TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 — GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT 1N87A
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1n34a1n67a1n87a1n100a+61n1911n1921n2701n2761n2771n283
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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1N295
Abstract: 1N294 1N90 ln297 1N135 1n69 1N75 1N128 in67a 1N67
Contextual Info: CRIMSON SEM IC ONDUC TO R INC Ti 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 0 0 3 5 0 D DE | S S m D ^ b T'Ot'Ol GERMANIUM DIODE TYPE PE A K REVERSE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW ARD CURRENT A T 1 V O LT
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1n66aat-10v-100v1n68a+14at-100v1n70a1n81a1n87a1n2951n2941n90ln2971n1351n691n751n128in67a1n67
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1N295
Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0
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1n34a1n67a1n87a1n100a+141n1911n1921n2701n2761n2771n2831n295diodes 1n34a1n91 diodedo-71n931n911n921n4502
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1Nu5
Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Contextual Info: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p
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1n34a1n38a1n38b1n52a+151n55b1n56a1n57a1n58a1n60a1n63a1nu5in4181ns4in2701n42un309in731n461n128
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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rca h 5412t3122n2654as218 transistor+6gex 74adiode germanium 1n283k3004tfk diodeac132ti-483
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82
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1N93
Abstract: 1N283 1N34A 1N276
Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-1 TYPE WO, CASE DO-7 io VF »F trr 00 mA (Vi (mA) (n*) MAX MAX MAX vrrm TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 — POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT
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1n34a1n67a1n87a1n100a+71n1911n1921n2701n2761n2771n2831n93
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DIODE 1N54
Abstract: 1N60 germanium diode 1N34 1N542 1N48 diode 1N38A diode 1N69a 1n81a 1N75 1N68
Contextual Info: GERMANIUM DIODE TYPE PEAK REV ERSE V O LTA G E AVERA G E FO RW ARD CU RREN T MINIMUM FO R W A R D CU RREN T A T 1 V O LT M AXIM UM REV ERSE CU RREN T A T 25°C V O LT S mA mA pA 1N34 75 50 5 50 a t -10V 1N34A 75 50 5 30 a t -10V 1N35 75 22.5 7 10 at -10V 1N36
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1n34a1n38a1n38b1n52a+151n54a1n57a1n58a1n60a1n63a-100vdiode 1n541n60 germanium diode1n341n5421n48 diodediode 1n69a1n81a1n751n68
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