1N192 Search Results

Contextual Info: 1N1923 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current4.0 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)1.0ó @Temp. (øC) (Test Condition)

1N91 DATASHEET

Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
Contextual Info: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7

Contextual Info: 1N1925 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current4.0 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)1.0ó @Temp. (øC) (Test Condition)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N295

Abstract: 1N294 1N90 ln297 1N135 1n69 1N75 1N128 in67a 1N67
Contextual Info: CRIMSON SEM IC ONDUC TO R INC Ti 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 0 0 3 5 0 D DE | S S m D ^ b T'Ot'Ol GERMANIUM DIODE TYPE PE A K REVERSE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW ARD CURRENT A T 1 V O LT

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

1N191

Abstract: minmax Germanium Power Diodes 1N192 germanium diodes INI92 "Germanium Diode" 1N191 diode
Contextual Info: The CENTRAL SEMICONDUCTOR 1N 191, 1N 192 types are point contact germanium diodes in a hermeti­ cally sealed glass case, designed for fast switching applications. MAXIMUM RATINGS Ta = 25°C unless otherwise noted SYMBOL Peak Repetitive Reverse Voltage Average Forward Current

Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-1 TYPE NO. CASI DO-7 TECHNOLOGY Vr r m 10 VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . GOLD BONDED 50 1.0 5.0 . POINT CONTACT POINT CONTACT

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N93

Abstract: 1N283 1N34A 1N276
Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-1 TYPE WO, CASE DO-7 io VF »F trr 00 mA (Vi (mA) (n*) MAX MAX MAX vrrm TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 — POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT

DIODE 1N54

Abstract: 1N60 germanium diode 1N34 1N542 1N48 diode 1N38A diode 1N69a 1n81a 1N75 1N68
Contextual Info: GERMANIUM DIODE TYPE PEAK REV ERSE V O LTA G E AVERA G E FO RW ARD CU RREN T MINIMUM FO R W A R D CU RREN T A T 1 V O LT M AXIM UM REV ERSE CU RREN T A T 25°C V O LT S mA mA pA 1N34 75 50 5 50 a t -10V 1N34A 75 50 5 30 a t -10V 1N35 75 22.5 7 10 at -10V 1N36

2u20 diode

Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Contextual Info: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

1N135

Abstract: diode 1n295 1n69 1N541 1N295 1N128 1N69A 1N69A diode diode 1N69a 1N295 diode
Contextual Info: CRIMSON S E M I CONDU CT OR INC dF | SSlIOÌt 0D003S0 7 2514096 C R IMSON S E M I C O N D U C T O R INC 99D 00350 D T'Ot'Ol GERMANIUM DIODE TYPE PEAK RE VE R SE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW AR D CURRENT A T 1 V O LT M A X IM U M