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    1N67 Search Results

    1N67 Datasheets (168)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    1N67
    BKC International 80 V, 500 mA, gold bonded germanium diode Scan PDF 2.85MB 78
    1N67
    Crimson Semiconductor GERMANIUM DIODE Scan PDF 27.11KB 1
    1N67
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 213.54KB 1
    1N67
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 86.39KB 1
    1N67
    Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF 56.8KB 1
    1N67
    Unknown GE Transistor Specifications Scan PDF 30.4KB 1
    1N67
    Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 120.94KB 1
    1N67
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 33.7KB 1
    1N67
    Semitronics Germanium Diodes / Germanium Rectifiers Scan PDF 126.41KB 2
    1N670
    Microsemi Data Book 1983 Scan PDF 176.54KB 5
    1N670
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 151.38KB 1
    1N670
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 78.7KB 1
    1N670
    Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF 71.42KB 1
    1N670
    Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 147.54KB 1
    1N670
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 33.7KB 1
    1N6700US
    Microsemi Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 5A Original PDF 2
    1N6701US
    Microsemi Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 5A Original PDF 2
    1N6702
    Microsemi Schottky Rectifier Scan PDF 274.98KB 2
    1N6702US
    Microsemi Schottky Rectifier Scan PDF 223.96KB 2
    1N6704
    Microsemi Ultra Fast Rectifier (less than 100ns) Original PDF 47.15KB 2
    ...
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    1N67 Price and Stock

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    Microchip Technology Inc 1N6761-1

    Diode Schottky 100V 1A 2-Pin DO-41 Bag
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    Verical 1N6761-1 50 1
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    Vyrian 1N6761-1 2,808
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    Microchip Technology Inc 1N6759

    - Bulk (Alt: 1N6759)
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    Avnet Americas 1N6759 Bulk 30 Weeks 100
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    Microchip Technology Inc 1N6759 30 Weeks
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    Master Electronics 1N6759
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    ITT Interconnect Solutions MKJCL1A1N6-7PA

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    Avnet Americas MKJCL1A1N6-7PA Bulk 38 Weeks 25
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    Interstate Connecting Components MKJCL1A1N6-7PA
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    Master Electronics MKJCL1A1N6-7PA
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    ITT Interconnect Solutions MKJCL1C11N6-7BD

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    Avnet Americas MKJCL1C11N6-7BD Bulk 38 Weeks 25
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    Microchip Technology Inc 1N6779

    - Bulk (Alt: 1N6779)
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    Avnet Americas 1N6779 Bulk 47 Weeks 100
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    Newark 1N6779 Bulk 500
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    Microchip Technology Inc 1N6779 47 Weeks
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    Master Electronics 1N6779
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    1N67 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N6776

    Contextual Info: TECHNICAL DATA ULTRAFAST SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/646 Devices Qualified Level 1N6774 JAN JANTX JANTXV 1N6775 1N6776 MAXIMUM RATINGS Ratings 1N6777 Symbol 1N6774 1N6775 1N6776 1N6777 Unit Working Peak Reverse Voltage Forward Current


    Original
    mil-prf-19500/6461n67741n67751n6776+21n6777o-257 PDF

    1N67A

    Abstract: DSAIH0002567
    Contextual Info: B K C IN TERN ATIO N AL D3E D | 117^03 □□□□Dfi? Type No. 1N67A T - 1 “| ~ 0/-07 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 Tele Fax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption


    OCR Scan
    1n67amil-s-19500dsaih0002567 PDF

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


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    qml-9500-191n1124a1n37681n3821a+161n4562b1n4565a1n5819-11n58221n67611n6761-1cczl2n6193u3microsemi 1n6761-1transistor 2n40331n1614 diodes1n6642ub2n2222a cdwr1n1742am19500/483transistor 2n3251 PDF

    1n6700

    Abstract: 1n6701
    Contextual Info: • 1N6702 AVAILABLE IN JAN. JANTX AND JANTXV 1N6700 thru 1N6702 and • 5 AMP SCHOTTKY BARRIER RECTIFIERS DSB5A20 thru DSB5A40 • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +125°C


    OCR Scan
    1n67021n6700dsb5a20dsb5a40+2e3qbs541n6701 PDF

    Contextual Info: TECHNICAL DATA ULTRAFAST SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/ 646 Devices Qualified Level 1N6774 JAN JANTX JANTXV 1N6775 MAXIMUM RATINGS Ratings Working Peak Reverse Voltage Forward Current TC = +100°C 1 Forward Current Surge Peak TP = 8.30C


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    mil-prf-19500/1n67741n67751n6776+21n67771000c PDF

    1N6772

    Abstract: 1N6772R 1N6773 1N6773R
    Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com DUAL ULTRAFAST POWER RECTIFIER Qualified per MIL-PRF-19500/645 DEVICES LEVELS 1N6772 1N6773 1N6772R 1N6773R JAN


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    mil-prf-19500/6451n67721n67731n6772r+21n6773ro-257 PDF

    1N295

    Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
    Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0


    OCR Scan
    1n34a1n67a1n87a1n100a+141n1911n1921n2701n2761n2771n2831n295diodes 1n34a1n91 diodedo-71n931n911n921n4502 PDF

    Equivalent ana 650

    Abstract: 1N6791 MSASC100W45H MSASC100W45HR
    Contextual Info: MSASC100W45H 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC100W45HR Or 1N6791 Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability


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    msasc100w45hmsasc100w45hr1n6791ir125+2msc0291aequivalent ana 650 PDF

    TC 14066

    Abstract: c 4138 41023 4413 1N6705 1N6705R VF10 VF11 VF12 VF13
    Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6705 1N6705R Features • • • • PRELIMINARY 400 Volts 20 Amps 35 ns passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop


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    1n67051n6705rtc 14066c 4138+6410234413vf10vf11vf12vf13 PDF

    d 2499

    Abstract: 9551 VF13 100 Amp current 1300 volt diode transistor vf12 1N6704 1N6704R VF10 VF11 VF12
    Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6704 1N6704R Features • • • • PRELIMINARY 200 Volts 20 Amps 35 ns passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop


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    1n67041n6704rd 24999551+6vf13100 amp current 1300 volt diodetransistor vf12vf10vf11vf12 PDF

    slug

    Abstract: 1N6742 1N674
    Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6742, R PRELIMINARY 17 Volts 200 Amps 5KW Features • • • • • • Passivated mesa structure for very low leakage currents Hermetically sealed, low profile ceramic surface mount power package


    Original
    1n6742do-217aamsc1328slug+11n674 PDF

    Contextual Info: Micnosemi m m m Santa Ana, CA Progresa Powered by Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6792 1N6792R Features Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents


    OCR Scan
    1n67921n6792rmsc0291airl25 PDF

    Contextual Info: Micmsemi m m m Santa Ana, CA Progress Powered Oy Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6705 1N6705R Features 400 Volts 20 Amps 35 ns passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop


    OCR Scan
    1n67051n6705r PDF

    1N6711B

    Abstract: VF10 VF11 VF12
    Contextual Info: Santa Ana Division 1N6711B Surface Mount Rectifier PRELIMINARY 200 Volts 50 Amps 5 usec Features • • • • • • Passivated mesa structure for very low leakage currents Hermetically sealed, low profile ceramic surface mount power package Low package inductance


    Original
    1n6711b1n6711brmsc1362vf10+2vf11vf12 PDF

    Contextual Info: B K C INTERNATIONAL D3E D | 117^03 □□□□Dfi? Type No. 1N67A T - 1 “| ~ 0/-07 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 Tele Fax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption


    OCR Scan
    1n67amil-s-19500 PDF

    1N6701

    Abstract: 1N6700US 1N6702US CDLL5A20 CDLL5A40
    Contextual Info: • 1N6702US AVAILABLE IN JAN,JANTX AND JANTXV 1N6700US thru 1N6702US and CDLL67O0 thru CDLL6702US and CDLL5A20 thru CDLL5A40 • 5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BO NDED. D O U B LE PLU G C O N STR U C TIO N


    OCR Scan
    1n6702us1n6700uscdll67o0cdll6702us+3cdll5a20cdll5a401n6701 PDF

    1N6762

    Abstract: 1n6763
    Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com DUAL ULTRAFAST POWER RECTIFIER Qualified per MIL-PRF-19500/642 DEVICES LEVELS 1N6762 1N6763 1N6764 1N6765 1N6762R


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    mil-prf-19500/6421n67621n67631n6764+51n67651n6762r1n6763r1n6764r1n6765r PDF

    1N5819

    Abstract: 1N6761 CD1A100 CD1A20 CD5817 CD5818 CD5819 CD6759 CD6760 CD6761
    Contextual Info: • 1N5819 AND 1N6761 AVAILABLE IN JANHC AND JANKC PER MIL PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED CD6759 thru CD6761 and CD1A20 thru CD1A100 and CD5817 thru CD5819 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,


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    1n58191n6761prf-19500/586cd6759+7cd6761cd1a20cd1a100cd5817cd5819cd5818cd6760 PDF

    JANTX, JX, JAN, Schottky

    Abstract: JANTX, JX, JAN JANTX 1N6761 VF01 1N5819-1 1N6761-1AVAILABLE DSB1A100 jantxv 1n5819 1N5819 1N6759
    Contextual Info: • 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N6759 thru 1N6761 and DSB1A20 thru DSB1A100 and 1N5819 and DSB5817 and DSB5818


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    1n5819-11n6761-1availablemil-prf-19500/5861n6759+111n6761dsb1a20dsb1a1001n5819dsb5817dsb5818jantx, jx, jan, schottkyjantx, jx, janjantx 1n6761vf01jantxv 1n5819 PDF

    1N6778

    Abstract: 1N6779
    Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ULTRAFAST POWER RECTIFIER Qualified per MIL-PRF-19500/647 DEVICES LEVELS 1N6778 1N6779 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    mil-prf-19500/6471n67781n6779o-257+2300ma/charac100 PDF

    1N6651

    Abstract: 1N6654 BYV32E-200 Sertech Labs UES2403 1N6708 1N6709
    Contextual Info: Microsemi Ultra Fast Rectifiers Part Number PPR1355 PPR1369 1N6708 1N6708R 1N6709 1N6709R UES1605CT UES1501 UES2401 UES1610CT UES1502 UES2402 UF1610 UES1615CT UES1503 UES2403 UF1615 BYV32E-200 UHVP2802 UES1504 UES2404 UF1620 UES1620CT UES1630CT UF1630 UHVP2804


    OCR Scan
    o-254t0-220aco-220act0-22+9o-220t0-220ab1n66511n6654byv32e-200sertech labsues24031n67081n6709 PDF

    1N5B19

    Abstract: DSB1A100 1N5819 1N5819-1 1N6759 1N6760 1N6761 DSB1A20 DSB5817 DSB5818
    Contextual Info: • 1N5819-1 AVAILABLE IN JAN.JANTX, JANTXV. AND JANS • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION 1N5819 and DSB5817 and DSB5818 and 1N6759 th ru 1N6761 and DSB1A20 th ru DSB1A100


    OCR Scan
    1n5819-11n5819dsb5817dsb5818+61n67591n6761dsb1a20dsb1a1001n5b191n6760 PDF

    1N6761-1

    Abstract: 1N6824UR-1 DO-213AB melf switching diodes
    Contextual Info: 1N6761-1/N6761UR-1 1N6824-1/1N6824UR-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4244, Rev- SCHOTTKY FAST SWITCHING DIODES Sensitron’s Power Semiconductor Products have been used in space, military and high-rel applications for more than 30 years. Our 100V Schottky fast switching diodes, 1N6761-1/UR-1 & 1N6824-1/UR-1, are available in both


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    1n6761-1/n6761ur-11n6824-1/1n6824ur-11n6761-1/ur-11n6824-1/ur-1+41n6761-11n6824ur-1do-213abmelf switching diodes PDF

    1N6761

    Abstract: 1N5819 CD1A100 CD1A20 CD5817 CD5818 CD5819 CD6759 CD6760 CD6761
    Contextual Info: • 1N5819 AND 1N6761 AVAILABLE IN JANHC AND JANKC PER MIL PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED CD5817 thru CD5819 and CD6759 thru CD6761 and CD1A20 thru CD1A100 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,


    Original
    1n58191n6761prf-19500/586cd5817+7cd5819cd6759cd6761cd1a20cd1a100cd5818cd6760 PDF