Y145M Search Results
Y145M Datasheets Context Search
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Contextual Info: N OTES: [T | CATALO G NUM BER AN D R E V E D N 2. P L E A S E R E V E W ]N S T R U C T D N B E F O R E U S N G T H E TOO L. LEVEL. SHEET N UM BER 43535 A FO R CATALOG PER ASME Y145M-1994 TOLERANCES DECWALS .XX -xxx ANS-ES I 1* * NQig. QRNCHES, MM .02/0.5 |
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y145m-1994 | |
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Contextual Info: *EV □esCRFT EN A R E L E A S E D PER EC R tt 5 8 6 5 NOTES: FT] CATALO G NUM BER AND REVEDN O F TOO L. DATE APPD O 2 N L c •D iz >0 2. PLEASE REVEW IN S T R U C T IO N S H E E T NUM BER 43534 CATALOG No. 1 0 7 - 4 3 9 5 5 - 0 1 SHOWN PER ASME Y145M-1994 |
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y145m-1994 | |
aoo8
Abstract: smd ic lv 1116 ao65 Tolerance limit for basic dimensions in ansi y14
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10h51810k-compatible10h518/bxajcaoo8+3 | |
circuit diagram of rc transmitter and receiver
Abstract: philips e3 Philips KS capacitors SC68C562 SC68C562C1N SCN68562
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sc68c562circuit diagram of rc transmitter and receiverphilips e3philips ks capacitors+2 | |
MTPSP25Contextual Info: MOTOROLA SC ÎXSTRS/R F> bôE • b3b?2SM 0 m a b 7 e1 S 4 3 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP5P25 Advance Information P o w er Field E ffe c t T ran sisto r P-Channel Enhancement-Mode Silicon Gate If This TMOS Power FET is designed for medium voltage, |
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mtp5p25y145mand-02314b03+1 | |
BUT51P
Abstract: 340D-01 R339 BUT51 NPN POWER DARLINGTON TRANSISTORS I960 free ic 339 motorola darlington power transistor
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t3fci72s4but51pdarlingtonbut51p340d-01+7 | |
BUT35
Abstract: transistors but35 CM4050
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b3l75s4t-35-1but35transistors but35+1 | |
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Contextual Info: M M O T O R O LA Military 10535 Dual J-K Master Slave Flip-Flop ELECTRICALLY TESTED PER: MIL-M-38510/06104 Th e 10535 is a dual m aster-slave dc coupled J- K flip-flop. Asynchronous Set (S ) and R eset (R ) are provided. Th e set and reset inputs override the clock. |
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mil-m-38510/0610410535/bxajc | |
7m 0880 IC
Abstract: 7m 0880
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7m 0880 ic7m 0880 | |
chn 751
Abstract: chn 738
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xc14548120-pinxc14s481xc145481/d+2 | |
sc 6038
Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
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t3b75sm2n6022n60342n6035+10 | |
diode SM 88A
Abstract: marking cd sot-353
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mc74hc1g04/dmc74hc1g04mc74hcdiode sm 88a+1 | |
BU208
Abstract: POT CORE 4229P-L00 transistor bu208 4229PL00-3C8
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bu207bu20814-maximumpot core 4229p-l00+2 | |
T39 diodeContextual Info: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage, |
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3b7254irfz34/dc65m2irfz34+1 | |
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mc14000ubContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14000UB Dual 3-In put “NOR” G ate Plus Inverter , 1 ^ I CASE 632 The MC14000UB dual 3-input NOR gate plus inverter is constructed with MOS P-channel and N-channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary |
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mc14000ubcd4000ubmc14000ub/d | |
d 1878Contextual Info: PROPRIETARY DATA tai p u l, without Um vittim i pwmlMfcm of SIRENZA MICRODEVICES D R EV ISIO N HISTORY DESC RIPTIO N ECO REV A IN IT IA L RELEASE 1878 APPR DATE R IV A S 11/4/02 D C o v e r Tape S e e N o te 6 0.30 ±0.05- R0.3 MAX.- 16.0 ±0.3 B B |
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100mmddc-10tssdp-16mpd-102767+1 | |
MC790P
Abstract: MC7915 TO-3 MC7912 K lt529 MC7905 MC-7816 MC7815 TO-92 221A-04 MC7800 transistor wc TO39
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mc7900mc78000-38qm98sc+10 | |
Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
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2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+7 | |
HP3200B
Abstract: SI 122 D 3055 5e 3055 smd MC10H181 divide-by-10 msq 216 MPG1678 L 3055 motorola
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di-vide-by-10hp3200bsi 122 d3055 5e+6 | |
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Contextual Info: REV A DATE APPD J.M.G. 10 6 /0 6 /9 5 N O TE U N L E S S O TH E R W IS E S P E C F H D : DESCRFTDN R ELEA SED . E C R tt 5 0 3 7 P L E A S E R E V E W N S T R U C T D N S H E E T NUMBER 4 3 5 0 9 B E F O R E U S N G TO OL 3 TO O L E A ONE P E C E CONSTRUCTION |
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y145m-1902 | |
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Contextual Info: 1 0 7 -4 3 9 1 4 -0 1 □ \rHTdTdTdTdTdTdTdTdld 1.969 - -( .865 21.97 50.01 - )1.104 - ( 2 8.04 )- C A T A L O G N2 107-43914-01 SHOWN REV J.M.G. 06/06/98 IT! DATE APPD RELEASED . E C R tt 4 9 7 8 A NO TE U N LESS DESCRFTDN O T H E R W IS E S P E C F H D : |
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y14-5m-1902 | |
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Contextual Info: NOTES: S E R IE S - stC o n —2 BACKPANEL *EV OESOtPTEN A RELEASED PER ECR* 5829 PINI C O N N E C T O R S THIS CONNECTOR IS DESIGNED TO MEET T H E A P P L E A B L E PE R FO R M EN C E REQUIREMENTS OF IEC 61076-4-101 AND B E LLC O R E GR-1217-C0RE DATE AFPD |
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gr-1217-c0re07874ln/2mmy145m-1982 | |
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Contextual Info: NOTES: s t C o n —Z - BACKPANEL *EV OESOtPTEN A RELEASED PER ECR* 5754 PINI C O N N E C T O R S THIS CONNECTOR IS DESIGNED TO MEET TH E A P P L E A B L E PERFORMENCE REQUIREMENTS OF IEC 6 1 0 7 6 -4 -1 0 1 AND BELLCORE G R -1217-C 0R E DATE APPD M.J.C. 06/11/99 |
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-1217-cy145m-1982 | |
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Contextual Info: *EV N OTES: NX FOR M D P L A N E A PPLH AT ID N S , P C BOARD P LU S SHROUD THICKNESS G U A R A N TE E 3 M ATM G LE V E L S <L1. L Z L3 AND A MMIMUM CO NTACT W P E LENG TH OF .098ln/2.5mm. P C BOARD AND CO NTACT W P E A R E BAS ED ON NOMINAL DIMENSION, TO LE R A N C ES FOR P C BOARD MAY VARIY AS MUCH A S 10%. |
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098ln/20078ln/y145m-1982 | |