MMBT5086 Search Results

MMBT5087

Abstract: BF254
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

2N5086

Abstract: 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

2N5087 equivalent

Abstract: 2N5087 fairchild 741 2N5086 MMBT5086 MMBT5087 2n5087 fairchild
Contextual Info: 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 B SOT-23 E Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Sourced from Process 62.

SOT-23 MARK 2Q

Abstract: BEL 167 transistor transistor k 2541 2N5086 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

2NS087

Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
Contextual Info: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5086 14E D I 0007573 M | PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current Collector Dissipation

2n5087

Abstract: 2N5086 BT5086 2N5087 equivalent
Contextual Info: S E M IC O N D U C T O R tm 2N5086 2N5087 MMBT5086 MMBT5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier T his device is designed for low level, high gain, low noise general purpose am p lifier a p p lica tio ns at co lle cto r currents to 50 mA. Sourced from Process 62.

MMBT5086

Abstract: ALI03 Transistor marking S PNP marking VA sot-23
Contextual Info: SAMSUNG S EM I C ONDU C T OR INC MMBT5086 14E D I 0007573 M | PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current

SOT-23 MARK 2Q

Abstract: BF254 sot-23 transistor p2 marking
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

Contextual Info: SEM ICONDUCTOR tm 2N5086 2N5087 MMBT5086 MMBT5087 Mark: 2 P / 2 Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Sourced from Process 62. Absolute Maximum RatinQS

MMBT6428

Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
Contextual Info: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087

2N50B

Abstract: 2N5086 2N5087 2N50B7 2N5087 NATIONAL SEMICONDUCTOR
Contextual Info: 2N5086/MMBT5086/2N5087/MMBT5087 a National Semiconductor MMBT5086 MMBT5087 2N5086 2N5087 T O -9 2 T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -1 PNP General Purpose Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter Min Max

2N5087 equivalent

Abstract: 2N5086 2N5087 MMBT5086 MMBT5087 2N5087 NATIONAL SEMICONDUCTOR 2NS087
Contextual Info: 2N5086 / MMBT5086 1 2N5087 I MMBT5087 Discrete POWER & Sign al Technologies National f i Semiconductor" MMBT5086 MMBT5087 2N5086 2N5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose am plifier applications at collector currents to 50 mA.

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BCX71G GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

it4142

Abstract: it414 BCX71H MMBT5086
Contextual Info: S A MS UN G SE MIC OND UCT OR INC BCX71H IME D | 0GQ7225 M | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2SA1020Y

Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

Bt 35 F transistor

Abstract: Bt 35 transistor
Contextual Info: DE^t.3L,72S4 0 D Ô E D 4 7 3 | ~ M O T O R O L A SC Í X S T R S / R FD6367254 ’ -V * MOTOROLA SC XSTRS/R 96D F i . 82047 R ating Sym bol V alu e v CEO 50 Vdc C o lle ctor-B ase V olta g e V cB O 50 Vdc Em itter-B ase V oltag e VebO 3.0 Vdc ic 50 m Adc

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11

8F SOT-23 PNP on

Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Contextual Info: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process

MARKING W2 SOT23 TRANSISTOR

Abstract: MMBA812M3 DO 127
Contextual Info: SAMSUNG S E M I C O N D U C T O R . INC MMBA812M3 1 4 E _.? §7^41*12 0 0 0 7 2 3 5 :1 PNP EPITAXIAL SILICON TRANSISTOR^27 ^ i GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotfector-Emltter Voltage

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

6CW 62

Abstract: BYM 268 6CW 59 CMR1U-02M CMSD4448 DAN202VAK bcw 918 CMPS5064 44H11 S02222
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 10BQ015 CMSH1-20ML CMR1U-02M CMSH1-40M EM 66 10MF2 10MQ040 EM EM 63 66 10MQ060 CMSH1-60M EM 66 1N6478 1N6479 CMR1-02M CMR1-02M EM EM 61 Code Selection Guide Industry Part Number Data Sheet 292