BT5086 Search Results

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • ^53*131 a01b341 3 ■ Surface Mount Devices LOW-NOISE TRANSISTORS NF hFE t y p .a t lc dB pA mln/max* at I c ^ C E mA/V RATINGS TYPE P ACK A G E VCEO V Vc b O V •c mA : VCE sat max. at lc % V mA/mA h typ. MHZ PINOUT 5 SEE

MMBA812M5

Abstract: MMBT5086
Contextual Info: SAMSUNG SEM ICO N D U CT O R . IN C MMBA812M5 l^ E D J 7^4142 00G7234 S | PNP EPITAXIAL SILICON TRANSISTOR ast-cft T - GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage

MMBA811C7

Abstract: MMBT5086 transistor marking fl VC80
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBA811C7 14E D §7^4143 0007530 & | PNP EPITAXIAL SILICO N TRANSISTOR DRIVER TRANSISTOR " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vottage Coitector Current

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

JB marking transistor

Abstract: transistor marking JB transistor 502 marking JB jb transistor MARKING CF vero MMBA812M3 MMBT5086
Contextual Info: SAMSUNG S EMIC ONDUCT OR . INC MMBA812M3 1 4 E _.? §7^41*12 0 0 0 7 2 3 5 :1 PNP EPITAXIAL SILICON T R A N SIST O R ^27 ^ i GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotfector-Emltter Voltage

transistor t8

Abstract: BCW69 MMBT5086 T8 SOT23
Contextual Info: SAMSUNG S EMICONDUCTOR IN C S BCW69 1 4 E D J l ? “11 5 D0G 751b 3 | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T8=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage : Collector Current

14ej

Abstract: BCW70 MMBT5086 TRANSISTOR MARKING 06 i marking
Contextual Info: SAMSUNG SEMICONDUCTOR 1INC BCW70 I D J| 000751? 5 | PNP EPITAXIAL SILICON TRANSISTOR T-£P - (S. GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 2 5 °C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

2n5087

Abstract: 2N5086 BT5086 2N5087 equivalent
Contextual Info: S E M IC O N D U C T O R tm 2N5086 2N5087 BT5086 MMBT5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier T his device is designed for low level, high gain, low noise general purpose am p lifier a p p lica tio ns at co lle cto r currents to 50 mA. Sourced from Process 62.

990Q

Abstract: BCW61D MMBT5086 lb21
Contextual Info: SAMSUNG SEMICONDUCTOR INC; BCW61D 1ME D | 7 ^ 1 4 2 0007515 1 | PNP EPITAXIAL SILICON TRANSISTOR T -A V GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cottector-Base Voltage CoSector-Emitter Voltage Emitter-Base*Voltage

BCW61A

Abstract: MMBT5086 482 transistor marking 9900
Contextual Info: SAMSUNG SEMICONDUCTOR INC BCW61A 14E D | 7^4140 0007512 b | PNP EPITAXIAL SILICON TRANSISTOR r a - n GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C i I | ! 1 ! • Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

BCW61B

Abstract: MMBT5086
Contextual Info: iSAMS U N G SEMICONDUGTOR IME 0 J ì 'ì b M m a 0007213 fl [_ INC BCW61B PNP EPITAXIAL SILICON TRANSISTOR T -a a -iíL GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

MMBT5086

Abstract: MMBTA70 transistor 571 MARKING VA SOT23
Contextual Info: SA MS UN G SEMICONDUCTOR INC MMBTA70 14E I 7‘1fc>‘1142 00073CU S | PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR f SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225

la 4142

Abstract: MMBA811C6 MMBT5086
Contextual Info: SA MS UN G SEMICONDUCTOR INC MMBA811C6 14E D | 711,4142 □ DO?aati 1 | PNP EPITAXIAL SILICON TRANSISTOR _ J T - 23- DRIVER TRANSISTOR t °i SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage