990Q Search Results

TBA560

Abstract: V14 FAIRCHILD TBA530 TBA540 TBA990 TBA990Q
Contextual Info: TBA990^ PAL TV CHROMA DEMODULATOR FAIRCHILD LINEAR INTEGRATED CIRCUIT GENERAL D E S C R IP T IO N - The TBA990 is an in te g r a te d c o lo r d e m o d u la t o r c ir c u it fo r c o lo r C O N N E C T IO N D IA G R A M t e le v is io n r e c e iv e r s in c o r p o r a t in g t w o a c tiv e s y n c h r o n o u s d e m o d u la t o r s f o r t h e R - Y a n d B -Y c h r o m i ­

990Q1

Contextual Info: REV. A DATE D E S C R IP T IO N 0 1 /0 7 /0 1 AD D C R IM P N O T E S / M O DIFY CONTACT PIN, FERRULE 4 .6 0 [. 1 B1] 4.00 [.1 5 7 ] 7 .6 0 [.2 9 9 ] RECOM M ENDED CABLE S TR IPPIN G DIM ’ S 01 DO CM o o Jl— L '— ' '— ' 1— o o o o o io tr> — CD

Contextual Info: MITSUBISHI LSIs M5M5255BP, BFP, BKP-70,-85,-10,-12.-70L, -85L,- 10L,- 12L,-70LL,-85LL,- 10LL,-12LL 2 6 2 1 4 4 -B IT 3 2 7 6 8 -W 0 R D BY 8-BIT CM O S STATIC RAM DESCRIPTION The M5M5255BP, BFP, BKP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabri­

Contextual Info: TS258-C89Y Nov. 1989 FUJITSU DATA SHEET • MB84F256-25 CMOS 256K BIT LOW POWER SRAM 32,768-WORD x 8-BIT FULL CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB84F256 is a 32,768-w ord by 8 -b it static random access memory. Fabricated with full CMOS circuit, MB84F256 realizes extremely low data retention current compared with

Contextual Info: cP February 1994 Edition 2.0 f - 'f I l f ' T ' f ' I I r U l l I b U D ATASH EE T: M B 9 8 A 9 0 8 2 X /9 0 9 2 x / 9 1 0 2 x / 9 1 1 2 x -2 0 LOW POWER SRAM MEMORY CARD LOW POWER STATIC RANDOM ACCESS MEMORY CARD 2 5 6 K / 5 1 2 K / 1 M / 2M-BYTE The Fujitsu MB98A9082x, 9092x, 9102x and 9112x are Static Random Access

Contextual Info: DENSE-PAC 1 Megabit UVEPROM M ICROSYSTEM S DPV3232VA DESCRIPTION; The DPV3232VA is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.

9102X

Abstract: PCMCIA SRAM Memory Card 512k 9112X fujitsu CARD, Static Memory, Battery Backup
Contextual Info: February 1994 Edition 2.0 FUJITSU DATA SHEET MB98A9082x/ 9092x / 9102x/ 9112x-20 LOW POWER SRAM MEMORY CARD LOW POWER STATIC RANDOM ACCESS MEMORY CARD 2 5 6 K /5 1 2 K /1 M / 2M-BYTE The Fujitsu MB98A9082x, 9092x, 9102x and 9112x are Static Random Access Memory SRAM cards capable of storing and retrieving large amounts of data. The

80703

Abstract: 80502
Contextual Info: May 1992 Edition 1.1 FUJITSU DATA SHEET / MB98A8040X- / 8050x- 8060x- / 8070x-30 EEPROM MEMORY CARD ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY CARD 16K /3 2 K /6 4 K /1 2 8 K -B Y T E The Fujitsu MB98A8040x, MB98A8050x, MB98A8060x and MB98A8070x are

Contextual Info: 1 Megabit CMOS SRAM D EN SE-PA C DPS3232V M I C R O S Y S Ï li M S DESCRIPTION: The DPS3232V is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 SRAM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matching thermal coefficients. The LCCs are

Contextual Info: D P V 128X 16A H IG H S PEED 1 2 8 K X 16 U V E P R O M P G A M O D U L E PRELIM IN ARY D ESCRIPTIO N: The DPV128X16A is a 40-pin Pin Grid Array PG A consisting of two 128K X 8 U V EP R O M devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.

Contextual Info: Dense-Pac Microsystems, Ina D PE45128 512KX8 CMOS EEPROM MODULE O DESCRIPTION: The DPE45128 is a four Megabit Electrically Erasable and Programmable Read O nly Memory EEPROM module organized as 512K X 8 bit, consisting of sixteen 32K X 8 EEPROM 's plus complete signal and I/O

Contextual Info: DENSE-PAC 1 Megabit CM O S EEPROM DPE3232V M I C R O S Y S T E M S DESCRIPTION: The DPE3232V is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 32K x 32, 64K X 16 or 128K x 8. The module is built with four low-power CMOS 32K x 8

450ME

Abstract: 6CA7
Contextual Info: CY62256 PRELIMINARY 32K x 8 Static RAM Features Functional Description • 55, 70 ns access time • CMOS for optimum speed/power • Low active power 70 ns, LL version — 275 mW (max.) • Low standby power (70 ns, LL version) — 28 nW (max.) • Easy memory expansion with CE and

M5M5256

Abstract: 5258BP 5M5256BP 5m5256
Contextual Info: MITSUBISHI LSIs M5M5256BP,BFP BKP-70,-85,-10,-12,-15,.70L, -85L,-10L,-12L,-15L,-70LL,-85LL,-10LL,-12LL,-15LL _ _ 2 6 2 1 4 4 - B I T ( 3 2 7 X - W 0 R P B Y 8 - B I T C M 0 S S T A T I C R A M DESCRIPTION PIN CONFIGURATION (TOP VIEW)

BCY77VII

Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in

50-PIN

Abstract: DPS256X
Contextual Info: DENSE-PAC MICROSYSTEMS 4 Megabit CM OS SRAM DPS256X16n3 DESCRIPTION: The DPS256X16n3SRAM "S T A C K " modules are a revolutionarynew memory subsystem using Dense-Pac Microsystems'ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded, " j " leaded

MS6264CLL-10

Abstract: MS6264CL-10 MS6264CLL-15 VDR 0047 MS6264CLL-80 ms6264cll MS6264C-80 MS6264CL-80 ZE10 ms6264cl-15
Contextual Info: MOSEL MS6264C 8K x 8 Low Power CMOS SRAM FEATURES DESCRIPTION • Available in 80/100/150 ns Max. The MOSEL MS6264C is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The device supports easy memory expansion with both an

SRM20100LC10

Abstract: SRM20100LC70 S004 SRM20100LC85
Contextual Info: 1 1991 MEMORY SRM20100L S-MOS S Y S T E M S A Seiko Epson Affiliate November, 1990 #S004 CMOS 1M-BIT STATIC RAM PIN CONFIGURATION DESCRIPTION The SRM201 OOI_7o/85/io is a 131,072 words x 8-bit asynchronous static, random access memory device on a monolithic CMOS chip. Its very low standby power

Contextual Info: S 0 T 2 3 IMPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX70 PARTMARKING DETAILS:BCX70G - AG BCX70GR - AW BCX70H - AH BCX70HR - 9P BCX70J - AJ BCX70JR - AX BCX70K - AK BCX70KR - P9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L C o lle c to r-E m itte r V oltag e

M51008P

Abstract: M5M51008P
Contextual Info: L IE D b24^fl25 D O IIIB ? • M IT I MITSUBISHI LSIs M5M51008P,FP-70,-85,-10,-12,-70L,-85L, •101,-12L,-7011,-8511,-1011,-1211 1048576-BIT 1 31072-WORD BY 8-BIT CMOS STATIC RAM MITSUBISHI DESCRIPTION (MEMORY/ASIC) The M 5M 51008P, FP are 1,048,576-bit CMOS static RAM

MS62256

Abstract: MS62256L-70NC
Contextual Info: MOSEL- VITELIC MS62256 32K x 8 CMOS STATIC RAM Features Description • High-speed - 70/100 ns ■ Low Power dissipation: MS62256L - 385mW Max. Operating - 550|iW (Typ.) Power Down ■ Fully static operation ■ All inputs and outputs directly TTL compatible

Contextual Info: MOSEL VÏÏTEUC MS62256CLL 3 2 K x 8 CMOS STATIC RAM Features Descriptions • High-speed - 70/100 ns ■ Low Power dissipation: — 385mW Max Operating — 16.5mW (Max) Standby — 0.55mW (Max) Power-down — 5(iA (Max) Ic c d r ■ Fully static operation

92256

Abstract: M 92256
Contextual Info: □P M DPS92256 , Dense-Pac Microsystems Inc. ç 32K X 8 CMOS SRAM MONOLITHIC D ES C R IP T IO N : The DPS92256 is a 32K X 8 Static Random Access Memory SRAM fabricated with a C M O S silicon gate process. The memory utilizes asynchronous circuitry and may be maintained in any state for an indefinite

Contextual Info: DENSE-PAC 4 Megabit CMOS SRAM MICROSYSTEMS DPS256X32V3 DESCRIPTION: The DPS256X32V3 "VERSA-STACK" m odule is a r e v o lu tio n a r y n e w m e m o ry subsystem u sin g Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic