SRM201 Search Results

SRM-2016

Abstract: SRM2016C SRM2016
Contextual Info: SRM2016 CMOS 16K-BIT STATIC RAM • DESCRIPTION The SRM201612 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with

SRM20100LRM70

Contextual Info: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic

Contextual Info: S-M 0 S SYSTEMS INC 7m m 5bE D QDQ1327 3SS ISH0 SRM20100LT 70/85/10 PRELIM INARY I CMOS 1M-BIT STATIC RAM • Industrial Temperature Range • PIN CONFIGURATION DESCRIPTION The SBM20100L85/io is a 131,072 words x 8 bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low

Contextual Info: 1 19 9 1 MEMORY SRM20100L S-MOS T E M S A Seiko Epson Affiliate November, 1990 #S004 CMOS 1M-BIT STATIC RAM PIN CONFIGURATION DESCRIPTION The SRM 20100I_7 o/85/io is a 131 ,07 2 words x 8-bit asynchronous static, random access memory device on a monolithic CMOS chip. Its very low standby power

srm2017

Abstract: SRM2017C SRM2017C12
Contextual Info: PF299-02 SRM2017C io/i2 CMOS 16K-BIT STATIC RAM •L o w Supply Current •A ccess Time 100ns/120ns # 2 ,0 4 8 Words X 8 Bits Asynchronous •DESCRIPTION The SRM2017C 10/12 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic

SRM20100LC10

Abstract: SRM20100LC70 S004 SRM20100LC85
Contextual Info: 1 1991 MEMORY SRM20100L S-MOS S Y S T E M S A Seiko Epson Affiliate November, 1990 #S004 CMOS 1M-BIT STATIC RAM PIN CONFIGURATION DESCRIPTION The SRM201 OOI_7o/85/io is a 131,072 words x 8-bit asynchronous static, random access memory device on a monolithic CMOS chip. Its very low standby power

Contextual Info: EPSON P F 6 1 9 -0 4 SRM201OOLLM70/85/10 1 M-Bit Static RAM •E x tre m e ly Low Standby C urrent •A c c e s s Time 70ns/85ns/100ns •1 3 1 ,0 7 2 W ordsx8-B it Asynchronous DESCRIPTION T h e SRM 20100LLM 7O /85/1O is an 1 3 1 ,0 7 2 w o rd s x 8 -b it asynchronous, static, random access m em ory on a

SRM2017C12

Abstract: SRM2017C SRM2017C10 SRM2017
Contextual Info: PF299-02 SRM2017C10/12 CMOS 16K-BIT STATIC RAM •L o w Supply Current #Access Time 100ns/120ns # 2 ,0 4 8 Words X 8 Bits Asynchronous •DESCRIPTION The SRM2017C 10/12 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile

CN101

Abstract: SRM2018C12 A-20
Contextual Info: PF300-02 SRM2018C10/12 CMOS 16K-BIT STATIC RAM #Low Supply Current #Access Time 100ns/120ns # 2 ,0 4 8 Words X 8 Bits Asynchronous •DESCRIPTION The SRM 20 I 8C 10/12 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very tow standby power requirement makes it ideal for applications requiring non-volatile

SRM20100LCT85

Abstract: SRM20100LMT SRM20100LT85/10
Contextual Info: SRM20100LÏ85/10 CMOS 1M-BIT STATIC RAM • • Industrial Temperature Range DESCRIPTION The SRM20100LT85/10 is a 131,072 words x 8-bit asynchronous, static, random access m em ory on a m onolithic CMOS chip. Its very low standby power requirem ent m akes it ideal for applications requiring

SRM2016C

Contextual Info: S R M 2 0 1 6 C M T 12 CMOS 16K-BIT STATIC RAM • DESCRIPTION The SRM2016C/MT12 is a 2,048 w ords x 8 bits asynchronous, static, random access m em ory on a m onolithic CM OS chip. Its very low standby power requirem ent m akes it ideal for applications requir­

epson ea-d

Abstract: SRM20116
Contextual Info: EPSON SRM20116LF85/10 1 M-Bit Static RAM • Low Supply Current • Access Time 85ns/100ns • 65,536 Wordsxl 6-Bit Asynchronous • D E S C R IP T IO N The S R M 20 1 16LF85/10 is a 65,536 w o rd s x l 6 -bit asynchronous, static, random access m em ory on a m onolithic

17D06

Abstract: a13e
Contextual Info: S R M 2 0 1 O O L T 70/85/10 PRELIMINARY CMOS 1M-BIT STATIC RAM • Industrial Temperature Range The SRM20100L.85/io is a 131,072 words x 8 bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring

Contextual Info: EPSON P F 638-03 SRM201OOLMT70/85/10 1 M -B it S ta tic R A M • • • • Industrial Temperature Range Low Supply Current Access Time 70ns/85ns/100ns 131,072 Wordsx8-Bit Asynchronous I DESCRIPTION T h e S R M 2 0 1 OOLMT70/85/10 is an 1 3 1 ,0 7 2 w o rd s x 8 -b it asynchronous, static, random access m em ory on a

srm20116lf

Contextual Info: EPSON SRM20116LFT85/10 1 M -B it • • • • S ta tic R A M Low Supply Current Access Time 85ns/100ns 65,536 W ordsxl 6-Bit Asynchronous Industrial Temperature Range • DESCRIPTION The S R M 20 1 16LFT85/10 is a 65,536 w o rd s x l 6 -bit asynchronous, static, random access m em ory on a m onolithic

SRM20100LMT

Abstract: A12E SRM20100LMT85 A16E SRM20100LRMT SRM20100LMT10 SRM20100LTMT A11E 5 pin A13E a13e
Contextual Info: P F 638-03 SRM201OOLMT70/85/10 1 M-Bit Static RAM • • • • Industrial Tem perature Range Low Supply Current Access Time 70ns/85ns/1 OOns 131,072 W ordsx8-B it Asynchronous • DESCRIPTION The SRM201OOLMT70/85/10 is an 131,072 w ordsx8-bit asynchronous, static, random access memory on a

SRM20100LLM70

Abstract: srm20100ll SRM20100LLM SRM20100LLM10 SRM20100LLM85 SRM20100LLTM jc 100A1 EPSON timing 2045J
Contextual Info: EPSON P F 6 1 9 -0 4 SRM201 O O LLM 70/85/10 1 M-Bit Static RAM • E x tr e m e ly Low S ta n d b y C urre n t •A c c e s s Tim e 70 ns/8 5n s/1 0 0 n s • 1 3 1 ,0 7 2 W o rd s x 8 -B it A s y n ch ro n o u s DESCRIPTION The SRM201OOLLM 7 0 /8 5 /1 0 is an 131,072 w ordsx8-bit asynchronous, static, random access memory on a

SRM2016C12

Abstract: SRM2016C-12 SRM2016C10 SRM2016 SRM-2016 SRM2016C SRM2016M10
Contextual Info: SRM2016C10/12 16K-BIT STATIC RAM • • • • Low Supply Current Access Time 100ns/120ns 2,048 Words x 8-Bit Asynchronous DESCRIPTION The SRM2016C10/12 is a 2,048 words x 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requir­

Contextual Info: SRM2014 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)200 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SRM201OOI-70/85/10 CMOS 1M-BIT STATIC RAM DESCRIPTION The SRM201 OOIjws&'io is a 131,072 words x 8 bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

Contextual Info: EPSON SRM20116LF85/10 1 M-Bit Static RAM • Low Supply Current • Access Time 85ns/100ns • 65,536 Wordsxl 6-Bit Asynchronous • DESCRIPTION The SRM20116LF85/10 is a 65,536 wordsxl 6-bit asynchronous, static, random access memory on a monolithic CMOS chip.Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

Contextual Info: EPSON PF715-02a SRM20116LFT85/10 1 M-Bit Static RAM • • • • Low Supply Current Access Time 85ns/100ns 65,536 W ordsxl 6-Bit Asynchronous Industrial Temperature Range I DESCRIPTION The SRM20116LFT85/10 is a 65,536 w ordsxl 6-bit asynchronous, static, random access memory on a monolithic

20100LC70

Contextual Info: SRM20100SL PRELIMINARY CMOS 1M-BIT STATIC RAM • Super Low Power • DESCRIPTION ■ PIN CONFIGURATION The SRM20100SL?o/b5/io is a 131,072 words x 8-bit asynchronous static, random access memory on a monolithic CMOS chip. Its super low standby power requirements make it ideal for applications requiring

Contextual Info: SRM20100L70/85/10 CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous • DESCRIPTION The SRM20100L70/85/10 is a 131,072 w ords x 8-bit asynchronous, static, random access m em ory on a m onolithic CMOS chip. Its very low standby power requirem ent m akes it ideal for applications requiring