A12E Search Results

Contextual Info: LH5164AV FEATURES CMOS 64K 8K x 8 Static RAM PIN CONNECTIONS • 8,192 x 8 bit organization TOP VIEW 28-PIN SOP • Access time: 200 ns (MAX.) f O O > El 'S 28 1• • Supply current (MAX.): NCC Operating: 248 mW A12E 2 27 □ WE a 7C 3 26 □ 55 mW (tRC, twc = 1 l^s)

A44E

Abstract: C14F A12E C22F A33E C101E cs5f A15E C12E C14E
Contextual Info: I 'E' Finish Resin Encapsulated I Tem perature Range — 55°C to + 1 0 0 °C Type Capacitance pF C5E C6E C12E A12E C14E A15E A25E C101E C201E C202E C203E C204E A33E C33E C35E 271 681 2001 2001 2001 5 600(3 1501 4001 10001 - 680 1500 3500 3500 3500 6000

Contextual Info: CMOS 4M 512K x 8 Mask-Programmable ROM PIN CONNECTIONS • 524,288 words x 8 bit organization TOP VIEW f 1• O E^Ô Ë/D C E • Power consumption: Operating: 357.5 mW (MAX.) A ie E 2 31 E a 18 A15E 3 30 □ a 17 A12E 4 29 □ a 14 A7E 5 28 □ a 13 A0 e

DTS-430

Contextual Info: PCM5310 PC M5 310 Burr-Brown Audio www.ti.com . SLES244 – FEBRUARY 2009

HY628400LP

Contextual Info: HY628400-I Series 'H Y U N D A I 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

A18E

Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
Contextual Info: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

23C512-20

Abstract: 23C512A
Contextual Info: HM 23C512,HM 23C512A,HM 23C512M ,HM 23C512AM 64K X 8 CMOS ROM General Description The HM 23C512 and HM 23C512A high performance Read Only Memories are organized as 65,536 words by 8 bits with access times 150 ns to 200 ns. The ROMs are designed to be compat­

Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

bv228

Abstract: S1C33210 S1C33L01 MF1517-01 CP4D
Contextual Info: MF1517-01 CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33210 Technical Manual S1C33210 PRODUCT PART S1C33210 FUNCTION PART NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

M29F800A3BT12

Abstract: m29f800a3br 29F800A
Contextual Info: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 M29F800A2 8M CMOS Flash Memory Organization: 524,288 words x 16 bits 1,048,576 words x 8 bits Power Supply Voltage: V q c = 3.3 V ± 0.3 V Access Time: M29F800A3—80 = 80 ns Max

Contextual Info: P F 805-05 EPSON SRM20V1OOLLMX7/SLMX7 1M-Bit Static RAM • • • • • • DESCRIPTION Low Supply Voltage Wide Temperature Range Low Supply Current Access Time 70ns 2.7V 131,072 Wordsx8-bit Asynchronous T h e S R M 2 0 V 1 0 0 L L M X 7 / S LM X 7 is an 1 3 1 ,0 7 2 w ordsx8-bit asynchronous, static, random access m em ory on a

R01US0032EJ

Contextual Info: User’s Manual 32 Cover RX63T Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

A7Z CODE

Abstract: 1N914 28F020 28F020-15 CAT28F020
Contextual Info: I_ V ^ S T CAT28F020 L icen sed In tel second source 2 Megabit CMOS Flash Memory FEATURES Commercial, Industrial and Automotive Tem ­ perature Ranges • Fast Read Access Time: 120/150/200 ns ■ Low Power CMOS Dissipation: - Active: 30 mA max CMOS/TTL levels

TMM2764D

Abstract: 28n15 TC5563APL-12L TC5563APL-10L TC5563APL-15L TC5565APL
Contextual Info: 8,192 W O RD X 8 BIT CM O S STATIC RAM Id e s c r i p t i o n I The TC5563APL is a 65,536 b it s ta tic ran d o m access m em o ry o rg an ized as 8,192 w ords by 8 b its u sin g CMOS technology, an d o p erate s from a sin g le SV supply. A dvanced c irc u it te ch n iq u es

Renewal battery

Abstract: PROCESSOR ALI 3329 IR124 3156 SHARP 357 Hall sensors marking code D diode ir048 Power Diode 818 EB53 R5F5630BCDFC
Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series Preliminary Preliminary Specification This is a Preliminary specification and is subject to change. All information contained in these materials, including products and product specifications,

Contextual Info: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33301 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

2183A

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V

B17C

Abstract: 4202 bd datasheet BD 139 N A13B A5l102 A18E 48-7191 A17A 48-2210 AND501
Contextual Info: PIN NUMBER 2161-1 102 PIN LENGTH 19.0/.750 PLATING 102 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-ANA102-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051

HY628400LLG-I

Abstract: DV06 138-884
Contextual Info: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

A1013-O

Contextual Info: O ld Semiconductor MSÌH51V257CL 32,768-Word x 8-Bit CM OS STATIC RAM DESCRIPTION The MSM51V257CL is a 32,768-word by 8-bit CMOS static RAM featuring 2.7 V to 3.6 V power supply operation and direct LVTTL input/output compatibility. Since the circuitry is completely

BFJ 64

Contextual Info: 32 0 S 5 - L _ S 5 H- L 7 / 1 5 / 9 8 7 : 5 7 PM P age 1 SHARP LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION High performance read access time The LH 28F320S 5-L/S5H -L flash m em ories with

A12sc

Abstract: A12S scs220
Contextual Info: PCM5310 PC M5 310 Burr-Brown Audio www.ti.com . SLES244 – FEBRUARY 2009

D12DT

Abstract: D12DT 10 HF34 PGA-L01R A12E DR96 DTS530 ZR12 DMS12 DUC3
Contextual Info: PCM5310 PC M5 310 Burr-Brown Audio www.ti.com SLES244A – FEBRUARY 2009 – REVISED JANUARY 2010 24-Bit, 96-/192-kHz, Asynchronous, 4-Channel/4-Channel Audio Codec with 2-VRMS Driver, Headphone Driver, and 6 Audio Interface Ports Check for Samples: PCM5310

Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by