23C512 Search Results

23C512-20

Abstract: 23C512A
Contextual Info: HM 23C512,HM 23C512A,HM 23C512M ,HM 23C512AM 64K X 8 CMOS ROM General Description The HM 23C512 and HM 23C512A high performance Read Only Memories are organized as 65,536 words by 8 bits with access times 150 ns to 200 ns. The ROMs are designed to be compat­

23C512-20

Abstract: 23C512
Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 7=ib4145 G 0 D 0 3 7 0 23C512 ? ■ CMOS MASK ROM is " 6 4 K x 8 Bit Mask ROM FEATURES GENERAL DESCRIPTION • Fully static operation • Silicon gate CMOS technology • Maximum access time 23C512-15: 150 ns 23C512-20: 200 ns

23C1024

Abstract: l0617 23C512 10EZ11 zi05 L-024 23C512A
Contextual Info: "SILICON INT EGRATE D 2TE D H flS SinüPTT]□ 0 O 0□ 7 ? CMOS M A S K R O M SIS 23C512/SIS 23C512A 64Kx8 CMOS MASK ROM FEATURE •Access time 200/250ns •Single + 5V power supply •TTL Compatible inputs and outputs •Three-state outputs •Tw o Programmable Chip Select for Output Control

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

UM23C512

Abstract: 23c512 UM23C512H UM-23 23C51
Contextual Info: 6 5 ,5 3 6 X 8 -B IT CMOS MASK-PROGRAMMABLE ROM Features • 65,536 x 8 -b it organization ■ 3-state ou tputs fo r wired-OR expansion ■ Single + 5V power supply ■ Access tim e: 150 ns max. ■ F u lly static operation ■ Current: ■ Available in 28 pin DIP package (23C512) or in

23c512-10

Abstract: IN3064 23c512
Contextual Info: Introduction 23C512 512K-BIT MASK ROM 8 BIT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 64K x 8 (byte mode) • Fast access time - Random access: 100ns (max.) (Output load 100pF) • Current - Operating: 30mA @ 5M Hz • Supply voltage - 4.5V ~ 5.5V

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

Contextual Info: 'S S T • 23C512 512K -B IT M ASK ROM 8 BIT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 64K x 8 (byte mode) • Fast access time - Random access: 100ns (max.) (Output load 10OpF) • Current - Operating: 30mA @ 5M Hz • Supply voltage - 4.5V ~ 5.5V

KM23C1010

Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10