KM44C1002 Search Results

Contextual Info: KM44C1002A CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 A is a high speed C M OS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de­

Contextual Info: KM44C1002C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random or sequential access of memory cells within the same row. Access time -5, -6, -7 or -8 and

Contextual Info: CMOS DRAM KM44C1002C 1M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES The S am sung K M 4 4C 1 0 02 C is a C M O S high sp ee d 1, 0 4 8 , 5 7 6 x 4 D y n a m ic R a n d o m A c c e s s M e m o ry . Its • Performance range:

KM44C1002A-8

Contextual Info: KM44C1002A_ CMOS DRAM 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM44C1002C

Contextual Info: CMOS DRAM KM44C1002C 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tR A C tC A C tR C KM44C1002C-5 50ns 13ns 90ns KM44C1002C-6 60ns 15ns 110ns KM44C1002C-7 70ns

Contextual Info: CMOS DRAM KM44C1002 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications

Contextual Info: L*S E J> SAMSUNG ELECTRONICS' INC B Timms D 0102 SD =1 BSSM6 K KM44C1002 CM OS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1002 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory.

Contextual Info: KM44C1002A CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM44C1002A CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung K M 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM44C1002 CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit x 4 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications

Contextual Info: SAMSUNG ELECTRONICS INC b4E T> • 7=ib4mE 001331G 3SS ■ S M G K KM44C1002A CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C1002A Is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory.

KM44C258

Abstract: KM44C1002BV
Contextual Info: KM44C1002B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

Contextual Info: KM44C1002A CMOS DRAM 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002A is a high speed CMOS 1,048,576 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM44C1002

Abstract: KM44C1002-8
Contextual Info: CMOS DRAM KM44C1002 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1002 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

a9ce

Contextual Info: KM44C1002C CMOS DRAM 1 M x 4 B i t C M O S D yn am ic R A M with Static C olum n M o d e DESCRIPTION This is a family of 1,048,576 x 4 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random or sequential access of memory cells within the same row. Access time -5, -6, -7 or -8 and

Contextual Info: KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION The Samsung KM44C1012A is a CMOS high speed 1,048,576 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6

23c2100

Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7

Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: KM44C1012A-7 KM44C1012A-8 KM44C1012A-10 tnAC tcAc I rc

SJ08

Abstract: MCM54400A mn414400asj mcm514400 20PIN KM44C1000ASL-10 KM44C1002A-7 KM44C1010A-10 KM44C1010A-7 MN414400
Contextual Info: - 234 - 4M m £ ì& m m tt £ ro CMOS x TRAC max ns TRCY (ns) D y n a m i c RAM (1 0 4 8 5 7 6 X 4 ) € 'i 7 f TCAD rain (ns) TAH (ns) TP tir (ns) TOCY min (ns) TDH rain (ns) TRWC min (ns) V D D or V C C (V) 2 0 P I N M I DD isax (mA) À I DD STANDBY U SV 1SB 2)

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J