MCM54400A Search Results

TP 3212 TRW

Abstract: MCM54400A 3206m L1AA 54400AN70 54400AN
Contextual Info: MO TO RO LA SEMICONDUCTOR TECHNICAL DATA 1M x 4 CMOS Dynamic RAM MCM54400A MCM5L4400A Fast Page Mode The MCM54400A is a 0.7|j CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS siiicon-gate process

MCM91430S

Abstract: motorola 30-pin simm memory dynamic 30-pin simm memory
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 1M x 9 Bit Dynamic Random Access Memory Module The MCM91430 is a 9M dynamic random access memory DRAM module orga­ nized as 1,048,576 x 9 bits. The module is a 30-lead single -in-line memory module (SIMM) consisting of two MCM54400AN and one 1M DRAM housed in a 20/26 J lead small outline package (SOJ) and mounted on a substrate along with a 0.22 pF

36L100

Contextual Info: M OTOROLA • SEMICONDUCTOR TECHNICAL DATA 1M x 36 Bit Dynamic Random Access Memory Module The MCM36100 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory module (SIMM) consisting of eight MCM54400A DRAMs housed in standard

MCM54400A-C

Abstract: mcm54400az M5440 M54400
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The MCM54400A is a 0.7p CM OS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate pro­

TCA 3189

Abstract: MCM81430S
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 1Mx8 Bit Dynamic Random Access Module MCM81430 MCM8L1430 The MCMB1430 and MCM8L1430 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead single-in-line memory modules (SIMM) consisting of two MCM54400AN DRAMs

MCM54400AZ60

Abstract: mcm54400a MCM54400A-70 mcm54400az MCM5L4400AZ60 MCM5L4400A-70 mcm54400 MCM54400AN60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A MCM5L4400A 1M x 4 CMOS Dynamic RAM Fast Page Mode The M C M 54400A is a 0 .7 ji CM OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with CMOS silicon-gate process

MCM81430S80

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 8 Bit Dynamic Random Access Module MCM81430 MCM8L1430 The MCM81430 and MCM8L1430 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead singlein-line memory modules (SIMM) consisting of two MCM54400AN DRAMs housed in

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 1M x 9 Bit Dynamic Random Access Memory Module The MCM91430 is a 9M dynamic random access memory DRAM module orga­ nized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM54400AN and one 1M DRAM housed in a 20/26 J-lead

MCM54400AZ70

Abstract: MCM54400AN70 MCM54400AZ80 MCM54400A-C MCM54400AN80 MCM54400A-C70 313X0
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The M C M 54400A is a 0 .7 fi C M OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with C M OS silicon-gate process

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-V Advance Information 1M x 4 CMOS Dynamic RAM N PACKAGE 300 M IL SOJ CASE 822-03 Fast Page Mode, 3.3 V Power Supply The MCM54400A-V is a 0.7n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate

MCM54400A-C

Abstract: K2545 33cA
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM N PACKAGE 300 M IL SOJ CASE 822-03 Fast Page Mode Operating Temperature - 40 to + 85°C T h e M C M 54400A is a 0.7n C M O S high-speed dynam ic random access m em ory. It is

mcm54400az

Abstract: MCM54400A sem 2107 IC SEM 2105 MCM54400AZ60
Contextual Info: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA MCM54400A MCM5L4400A Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode T h e M C M 5 4 4 0 0 A is a 0 7 m C M O S hig h -s p e e d , d y n a m ic ra n d o m acc e s s m em ory. It N PACKAGE 300-MIL SOJ CASE 822

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-V Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode, 3.3 V Power Supply N PACKAGE 300 MIL SOJ CASE 822-03 The M CM 54400A-V is a 0.7y CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fou r-b it words and fabricated with CMOS sili­

MCM54400AN60

Abstract: sl440 MCM54400A MCM54400at60 MCM5L4400AT70 MCM54400AN80
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 4 CMOS Dynamic RAM MCM54400A MCM5L4400A Fast Page Mode The MCM54400A is a 0.7p CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fou r-b it words and fabricated with CMOS silicon-gate process technology. Advanced circuit design and fine line processing provide high

MCM54400AN70

Abstract: MCM54400AN60 MCM54400AN80 Motorola CMOS Dynamic RAM 1M MCM5L4400AN70 MCM54400A-70 MCM54400A Motorola CMOS Dynamic RAM 1M x 1 5Bp power control MCM54400A-60
Contextual Info: MOTOROLA Order this document by MCM54400A/D SEMICONDUCTOR TECHNICAL DATA MCM54400A MCM5L4400A 1M x 4 CMOS Dynamic RAM Fast Page Mode N PACKAGE 300 MIL SOJ CASE 822-03 The MCM54400A is a 0.7µ CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate process

MCM54400A-C

Abstract: 54400AN M54400
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40 to + 85°C The MCM54400A is a 0.7|i CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fo u r-b it words and fabricated with CMOS siiicon-gate

Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module The MCM81430 is an 8M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 8 bits. The module is a 30-lead single-in-line memory mod­ ule (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lead small

MCM54400A-C

Abstract: MCM54400AN70 MCM54400A-C70 MCM54400AZ-70 mcm54400az MCM54400AZ70 MCM54400AZ80
Contextual Info: Order this document by MCM54400A-C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40 to + 85°C N PACKAGE 300 MIL SOJ CASE 822-03 The MCM54400A is a 0.7^ CMOS high-speed dynamic random access memory. It is

MCM54400A-C

Abstract: 5Bp power control Motorola CMOS Dynamic RAM 1M x 1 MCM54400A-C70 MCM54400A-C80 MCM54400ANC70 MCM54400ANC80
Contextual Info: MOTOROLA Order this document by MCM54400A-C/D SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM N PACKAGE 300 MIL SOJ CASE 822-03 Fast Page Mode Operating Temperature – 40 to + 85°C The MCM54400A is a 0.7µ CMOS high-speed dynamic random access memory. It is

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module The MCM81430 is an 8M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 8 bits. The module is a 30-lead s in gle -in-line memory module (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lea d

32130S

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32130 1M x 32 Bit Dynamic Random Access Memory Module The MCM32130 is a 32M dynamic random access memory DRAM module organized as 1,048,576 x 32 bits. The module is a 72-lead single-in-line memory module (SIMM) consisting of eight MCM54400AN DRAMs housed in standard 300

5Bp power control

Abstract: Motorola CMOS Dynamic RAM 2m x 8 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM36204/D SEMICONDUCTOR TECHNICAL DATA MCM36204 2M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36204 is a 72M dynamic random access memory DRAM module organized as 2,097,152 x 36 bits. The module is a double-sided 72-lead single-inline memory module (SIMM) consisting of eighteen MCM54400AN DRAMs

ASC CAPACITOR

Abstract: MCM54400ANV80 MCM54400ATV80 54400A
Contextual Info: MOTOROLA Order this document by MCM54400A–V/D SEMICONDUCTOR TECHNICAL DATA MCM54400A–V Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode, 3.3 V Power Supply N PACKAGE 300 MIL SOJ CASE 822–03 The MCM54400A–V is a 0.7µ CMOS high–speed dynamic random access

MCM81430

Abstract: MCM81430S70 5Bp power control 30 pin simm memory dynamic MCM81430S60 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM81430/D SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module S PACKAGE SIMM MODULE CASE 839A-01 The MCM81430 is an 8M dynamic random access memory DRAM module organized as 1,048,576 x 8 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lead small